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Thomas Frost
Thomas Frost
Geverifieerd e-mailadres voor umich.edu
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Room Temperature Electrically Injected Polariton Laser
P Bhattacharya, T Frost, S Deshpande, MZ Baten, A Hazari, A Das
Physical Review Letters 112 (23), 236802, 2014
2542014
Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon
T Frost, S Jahangir, E Stark, S Deshpande, A Hazari, C Zhao, BS Ooi, ...
Nano letters 14 (8), 4535-4541, 2014
1722014
Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot
S Deshpande, T Frost, A Hazari, P Bhattacharya
Applied Physics Letters 105 (14), 141109, 2014
1122014
An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination
C Zhao, TK Ng, A Prabaswara, M Conroy, S Jahangir, T Frost, J O'Connell, ...
Nanoscale 7 (40), 16658-16665, 2015
1052015
InGaN/GaN Quantum Dot RedLaser
T Frost, A Banerjee, K Sun, SL Chuang, P Bhattacharya
IEEE Journal of Quantum Electronics 49 (11), 923-931, 2013
902013
High Performance InAs//InP Quantum Dot 1.55 Tunnel Injection Laser
S Bhowmick, MZ Baten, T Frost, BS Ooi, P Bhattacharya
IEEE Journal of Quantum Electronics 50 (1), 7-14, 2013
882013
Formation and Nature of InGaN Quantum Dots in GaN Nanowires
S Deshpande, T Frost, L Yan, S Jahangir, A Hazari, X Liu, ...
Nano letters 15 (3), 1647-1653, 2015
802015
Digital subcarrier multiplexing: enabling software-configurable optical networks
D Welch, A Napoli, J Bäck, S Buggaveeti, C Castro, A Chase, X Chen, ...
Journal of Lightwave Technology 41 (4), 1175-1191, 2022
442022
Room-Temperature Spin Polariton Diode Laser
A Bhattacharya, MZ Baten, I Iorsh, T Frost, A Kavokin, P Bhattacharya
Physical Review Letters 119 (6), 067701, 2017
432017
Small signal modulation characteristics of red-emitting (λ= 610 nm) III-nitride nanowire array lasers on (001) silicon
S Jahangir, T Frost, A Hazari, L Yan, E Stark, T LaMountain, ...
Applied Physics Letters 106 (7), 071108, 2015
392015
High performance red-emitting multiple layer InGaN/GaN quantum dot lasers
T Frost, A Hazari, A Aiello, MZ Baten, L Yan, J Mirecki-Millunchick, ...
Japanese Journal of Applied Physics 55 (3), 032101, 2016
372016
Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ= 420 nm) on c-plane GaN substrate
A Banerjee, T Frost, E Stark, P Bhattacharya
Applied Physics Letters 101 (4), 041108, 2012
372012
1.6 Tbps Coherent 2-Channel Transceiver Using a Monolithic Tx/Rx InP PIC and Single SiGe ASIC
V Lal, P Studenkov, T Frost, H Tsai, B Behnia, J Osenbach, S Wolf, ...
Optical Fiber Communication Conference, M3A. 2, 2020
332020
Room Temperature GaN-Based Edge-Emitting Spin-Polarized Light Emitting Diode
A Bhattacharya, Z Baten, T Frost, P Bhattacharya
IEEE Photonics Technology Letters 29 (3), 338-341, 2017
232017
Small-signal modulation and differential gain of red-emitting (λ= 630 nm) InGaN/GaN quantum dot lasers
T Frost, A Banerjee, P Bhattacharya
Applied Physics Letters 103 (21), 211111, 2013
222013
Quantum dot rolled-up microtube optoelectronic integrated circuit
S Bhowmick, T Frost, P Bhattacharya
Optics Letters 38 (10), 1685-1687, 2013
222013
Characteristics of a high speed tunnel injection p-doped quantum dot excited state laser
CS Lee, P Bhattacharya, T Frost, W Guo
Applied Physics Letters 98 (1), 011103, 2011
202011
Characteristics of a high speed tunnel injection p-doped quantum dot excited state laser
CS Lee, P Bhattacharya, T Frost, W Guo
Applied Physics Letters 98 (1), 011103, 2011
202011
GaAs-based high temperature electrically pumped polariton laser
MZ Baten, P Bhattacharya, T Frost, S Deshpande, A Das, D Lubyshev, ...
Applied Physics Letters 104 (23), 231119, 2014
182014
Output polarization characteristics of a GaN microcavity diode polariton laser
A Bhattacharya, MZ Baten, I Iorsh, T Frost, A Kavokin, P Bhattacharya
Physical Review B 94 (3), 035203, 2016
172016
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