| A 1.2-V 8.3-nJ CMOS humidity sensor for RFID applications Z Tan, R Daamen, A Humbert, YV Ponomarev, Y Chae, MAP Pertijs IEEE Journal of Solid-State Circuits 48 (10), 2469-2477, 2013 | 150 | 2013 |
| Method of fabricating a double gate field effect transistor device, and such a double gate field effect transistor device RC Surdeanu, Y Ponomarev US Patent 7,521,323, 2009 | 119 | 2009 |
| CMOS device optimization for mixed-signal technologies PA Stolk, HP Tuinhout, R Duffy, E Augendre, LP Bellefroid, MJB Bolt, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 77 | 2001 |
| Implantable multi-electrode device M Merz, YV Ponomarev, RHW Pijnenburg US Patent 8,798,737, 2014 | 65 | 2014 |
| Apparatus and method for molecule detection using nanopores M Merz, YV Ponomarev, G Curatola US Patent 9,034,637, 2015 | 64 | 2015 |
| High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates YV Ponomarev, PA Stolk, C Salm, J Schmitz, PH Woerlee IEEE Transactions on Electron Devices 47 (4), 848-855, 2000 | 46 | 2000 |
| A 1.8 V 11μW CMOS smart humidity sensor for RFID sensing applications Z Tan, R Daamen, A Humbert, K Souri, Y Chae, YV Ponomarev, ... IEEE Asian Solid-State Circuits Conference 2011, 105-108, 2011 | 44 | 2011 |
| Gate-workfunction engineering using poly-(Si, Ge) for high-performance 0.18/spl mu/m CMOS technology YV Ponomarev, C Salm, J Schmitz, PH Woerlee, PA Stolk, DJ Gravesteijn International Electron Devices Meeting. IEDM Technical Digest, 829-832, 1997 | 42 | 1997 |
| Gate current and oxide reliability in p/sup+/poly MOS capacitors with poly-Si and poly-Ge/sub 0.3/Si/sub 0.7/gate material C Salm, JH Klootwijk, Y Ponomarev, PWM Boos, DJ Gravesteijn, ... IEEE Electron Device Letters 19 (7), 213-215, 1998 | 37 | 1998 |
| A precision DTMOST-based temperature sensor K Souri, Y Chae, Y Ponomarev, KAA Makinwa 2011 Proceedings of the ESSCIRC (ESSCIRC), 279-282, 2011 | 36 | 2011 |
| High hole mobilities in fully-strained Si/sub 1-x/Ge/sub x/layers (0.3< x< 0.4) and their significance for SiGe pMOSFET performance RJP Lander, YV Ponomarev, JGM van Berkum, WB de Boer IEEE Transactions on Electron Devices 48 (8), 1826-1832, 2001 | 36 | 2001 |
| A 1.2 V 8.3 nJ energy-efficient CMOS humidity sensor for RFID applications Z Tan, Y Chae, R Daamen, A Humbert, YV Ponomarev, MAP Pertijs 2012 Symposium on VLSI Circuits (VLSIC), 24-25, 2012 | 31 | 2012 |
| 0.8 μW 12-bit SAR ADC sensors interface for RFID applications D De Venuto, DT Castro, Y Ponomarev, E Stikvoort Microelectronics Journal 41 (11), 746-751, 2010 | 29 | 2010 |
| Biomimetic neurostimulation device MMJG Decré, HCF Martens, YV Ponomarev US Patent 8,923,977, 2014 | 27 | 2014 |
| Low power 12-bit SAR ADC for autonomous wireless sensors network interface D De Venuto, DT Castro, Y Ponomarev, E Stikvoort 2009 3rd International Workshop on Advances in sensors and Interfaces, 115-120, 2009 | 26 | 2009 |
| Ultra low-power 12-bit SAR ADC for RFID applications D De Venuto, E Stikvoort, DT Castro, Y Ponomarev 2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010 …, 2010 | 24 | 2010 |
| Intrusion protection using stress changes R Hoofman, RHW Pijnenburg, YV Ponomarev US Patent 8,330,191, 2012 | 23 | 2012 |
| Humidity sensor based on progressive corrosion of exposed material A Humbert, YV Ponomarev, M Merz, R Hoofman US Patent 8,683,861, 2014 | 22 | 2014 |
| Detailed modeling of sub-100-nm MOSFETs based on Schro/spl uml/dinger DD per subband and experiments and evaluation of the performance gap to ballistic transport G Curatola, G Doornbos, J Loo, YV Ponomarev, G Iannaccone IEEE transactions on electron devices 52 (8), 1851-1858, 2005 | 18 | 2005 |
| Drift mobilities and Hall scattering factors of holes in ultrathin layers grown on Si RJP Lander, YV Ponomarev, JGM Van Berkum, WB De Boer, R Loo, ... Journal of Applied Physics 88 (4), 2016-2023, 2000 | 17 | 2000 |
Josine LooSmart PhotonicsVerified email at smartphotonics.nl
