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Srabanti Chowdhury
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Year
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
8282018
Lateral and vertical transistors using the AlGaN/GaN heterostructure
S Chowdhury, UK Mishra
IEEE Transactions on Electron Devices 60 (10), 3060-3066, 2013
1862013
Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer
S Chowdhury, BL Swenson, UK Mishra
IEEE Electron Device Letters 29 (6), 543-545, 2008
1802008
Power GaN Devices
M Meneghini, G Meneghesso, E Zanoni
Cham: Springer International Publishing, 2017
1752017
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
S Chowdhury, BL Swenson, MH Wong, UK Mishra
Semiconductor Science and Technology 28 (7), 074014, 2013
1662013
CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion
S Chowdhury, MH Wong, BL Swenson, UK Mishra
IEEE Electron Device Letters 33 (1), 41-43, 2011
1662011
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ...
Applied Physics Letters 106 (18), 183502, 2015
952015
Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures
M Higashiwaki, S Chowdhury, BL Swenson, UK Mishra
Applied Physics Letters 97 (22), 222104, 2010
842010
Distribution of donor states on etched surface of AlGaN/GaN heterostructures
M Higashiwaki, S Chowdhury, MS Miao, BL Swenson, CG Van de Walle, ...
Journal of Applied Physics 108 (6), 063719, 2010
802010
Design of 1.2 kV Power Switches With LowUsing GaN-Based Vertical JFET
D Ji, S Chowdhury
IEEE Transactions on Electron Devices 62 (8), 2571-2578, 2015
782015
High power semiconductor electronic components with increased reliability
RK Lal, R Coffie, Y Wu, P Parikh, Y Dora, U Mishra, S Chowdhury, ...
US Patent 8,598,937, 2013
772013
Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions
L Gordon, MS Miao, S Chowdhury, M Higashiwaki, UK Mishra, ...
Journal of Physics D: Applied Physics 43 (50), 505501, 2010
752010
Normally OFF trench CAVET with active Mg-doped GaN as current blocking layer
D Ji, MA Laurent, A Agarwal, W Li, S Mandal, S Keller, S Chowdhury
IEEE Transactions on Electron Devices 64 (3), 805-808, 2016
742016
880 V/MIS Gate Trench CAVET on Bulk GaN Substrates
D Ji, A Agarwal, H Li, W Li, S Keller, S Chowdhury
IEEE Electron Device Letters 39 (6), 863-865, 2018
702018
Semiconductor devices with guard rings
U Mishra, S Chowdhury, Y Dora
US Patent 8,901,604, 2014
702014
Demonstrating> 1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices
D Ji, C Gupta, SH Chan, A Agarwal, W Li, S Keller, UK Mishra, ...
2017 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2017
572017
Transistors with isolation regions
U Mishra, S Chowdhury
US Patent 8,742,460, 2014
552014
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)
D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, S Keller, UK Mishra, ...
IEEE Electron Device Letters 39 (5), 711-714, 2018
542018
Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures
D Ji, B Ercan, S Chowdhury
Applied Physics Letters 115 (7), 073503, 2019
502019
Drug susceptibility of Mycobacterium tuberculosis in a rural area of Bangladesh and its relevance to the national treatment regimens
A Van Deun, KJM Aung, S Chowdhury, S Saha, A Pankaj, A Ashraf, ...
The International Journal of Tuberculosis and Lung Disease 3 (2), 143-148, 1999
491999
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