| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1040 | 2018 |
| Electric drive technology trends, challenges, and opportunities for future electric vehicles I Husain, B Ozpineci, MS Islam, E Gurpinar, GJ Su, W Yu, S Chowdhury, ... Proceedings of the IEEE 109 (6), 1039-1059, 2021 | 206 | 2021 |
| Power GaN Devices M Meneghini, G Meneghesso, E Zanoni Cham: Springer International Publishing, 2017 | 205 | 2017 |
| Lateral and vertical transistors using the AlGaN/GaN heterostructure S Chowdhury, UK Mishra IEEE Transactions on Electron Devices 60 (10), 3060-3066, 2013 | 197 | 2013 |
| Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer S Chowdhury, BL Swenson, UK Mishra IEEE Electron Device Letters 29 (6), 543-545, 2008 | 186 | 2008 |
| CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion S Chowdhury, MH Wong, BL Swenson, UK Mishra IEEE Electron Device Letters 33 (1), 41-43, 2011 | 184 | 2011 |
| Current status and scope of gallium nitride-based vertical transistors for high-power electronics application S Chowdhury, BL Swenson, MH Wong, UK Mishra Semiconductor Science and Technology 28 (7), 074014, 2013 | 173 | 2013 |
| Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ... Applied Physics Letters 106 (18), 2015 | 107 | 2015 |
| Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures M Higashiwaki, S Chowdhury, BL Swenson, UK Mishra Applied Physics Letters 97 (22), 2010 | 90 | 2010 |
| Distribution of donor states on etched surface of AlGaN/GaN heterostructures M Higashiwaki, S Chowdhury, MS Miao, BL Swenson, CG Van de Walle, ... Journal of Applied Physics 108 (6), 2010 | 90 | 2010 |
| Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions L Gordon, MS Miao, S Chowdhury, M Higashiwaki, UK Mishra, ... Journal of Physics D: Applied Physics 43 (50), 505501, 2010 | 89 | 2010 |
| Design of 1.2 kV Power Switches With LowUsing GaN-Based Vertical JFET D Ji, S Chowdhury IEEE Transactions on Electron Devices 62 (8), 2571-2578, 2015 | 85 | 2015 |
| Normally OFF trench CAVET with active Mg-doped GaN as current blocking layer D Ji, MA Laurent, A Agarwal, W Li, S Mandal, S Keller, S Chowdhury IEEE Transactions on Electron Devices 64 (3), 805-808, 2016 | 83 | 2016 |
| 880 V/MIS Gate Trench CAVET on Bulk GaN Substrates D Ji, A Agarwal, H Li, W Li, S Keller, S Chowdhury IEEE Electron Device Letters 39 (6), 863-865, 2018 | 80 | 2018 |
| High power semiconductor electronic components with increased reliability RK Lal, R Coffie, Y Wu, P Parikh, Y Dora, U Mishra, S Chowdhury, ... US Patent 8,598,937, 2013 | 78 | 2013 |
| Semiconductor devices with guard rings U Mishra, S Chowdhury, Y Dora US Patent 8,901,604, 2014 | 73 | 2014 |
| Demonstrating> 1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices D Ji, C Gupta, SH Chan, A Agarwal, W Li, S Keller, UK Mishra, ... 2017 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2017 | 67 | 2017 |
| Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures D Ji, B Ercan, S Chowdhury Applied Physics Letters 115 (7), 2019 | 65 | 2019 |
| Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, S Keller, UK Mishra, ... IEEE Electron Device Letters 39 (5), 711-714, 2018 | 62 | 2018 |
| Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design, and Applications BJ Baliga Woodhead Publishing, 2018 | 56 | 2018 |
Umesh MishraUCSBVerified email at ece.ucsb.edu
