| Combined radiation effects of protons and electrons on NPN transistors X Li, H Geng, C Liu, Z Zhao, D Yang, S He IEEE Transactions on Nuclear Science 57 (2), 831-836, 2010 | 57 | 2010 |
| Interaction between hydrogen and gallium vacancies in β-Ga2O3 Y Wei, X Li, J Yang, C Liu, J Zhao, Y Liu, S Dong Scientific Reports 8 (1), 10142, 2018 | 47 | 2018 |
| Simultaneous and sequential radiation effects on NPN transistors induced by protons and electrons X Li, C Liu, E Rui, H Geng, J Yang IEEE Transactions on Nuclear Science 59 (3), 625-633, 2012 | 46 | 2012 |
| Irradiation effects on the structural and optical properties of single crystal β-Ga2O3 C Liu, Y Berencén, J Yang, Y Wei, M Wang, Y Yuan, C Xu, Y Xie, X Li, ... Semiconductor Science and Technology 33 (9), 095022, 2018 | 42 | 2018 |
| Degradation mechanisms of current gain in NPN transistors L Xing-Ji, G Hong-Bin, L Mu-Jie, Y De-Zhuang, H Shi-Yu, L Chao-Ming Chinese Physics B 19 (6), 066103, 2010 | 37 | 2010 |
| Synergistic effect of ionization and displacement damage in NPN transistors caused by protons with various energies X Li, C Liu, J Yang IEEE Transactions on Nuclear Science 62 (3), 1375-1382, 2015 | 33 | 2015 |
| Separation of ionization traps in NPN transistors irradiated by lower energy electrons X Li, C Liu, J Yang, Y Zhao, G Liu IEEE Transactions on Nuclear Science 60 (5), 3924-3931, 2013 | 33 | 2013 |
| Displacement damage in bipolar junction transistors: Beyond Messenger-Spratt HJ Barnaby, RD Schrimpf, KF Galloway, X Li, J Yang, C Liu IEEE Transactions on Nuclear Science 64 (1), 149-155, 2016 | 32 | 2016 |
| The elemental 2D materials beyond graphene potentially used as hazardous gas sensors for environmental protection HS Tsai, Y Wang, C Liu, T Wang, M Huo Journal of Hazardous Materials 423, 127148, 2022 | 31 | 2022 |
| Synergistic radiation effects on PNP transistors caused by protons and electrons X Li, C Liu, H Geng, E Rui, D Yang, S He IEEE Transactions on Nuclear Science 59 (2), 439-446, 2012 | 31 | 2012 |
| Synergistic effects of NPN transistors caused by combined proton irradiations with different energies X Li, J Yang, C Liu, G Bai, W Luo, P Li Microelectronics reliability 82, 130-135, 2018 | 28 | 2018 |
| The effect of ionization and displacement damage on minority carrier lifetime J Yang, X Li, C Liu, DM Fleetwood Microelectronics reliability 82, 124-129, 2018 | 28 | 2018 |
| Research of single-event burnout and hardening of AlGaN/GaN-based MISFET X Luo, Y Wang, Y Hao, X Li, CM Liu, XX Fei, CH Yu, F Cao IEEE Transactions on Electron Devices 66 (2), 1118-1122, 2019 | 25 | 2019 |
| Research on the combined effects of ionization and displacement defects in NPN transistors based on deep level transient spectroscopy X Li, C Liu, J Yang, G Ma IEEE Transactions on Nuclear Science 62 (2), 555-564, 2015 | 23 | 2015 |
| The equivalence of displacement damage in silicon bipolar junction transistors C Liu, X Li, H Geng, E Rui, L Guo, J Yang, L Xiao Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2012 | 23 | 2012 |
| Radiation effects on silicon bipolar transistors caused by 3–10 MeV protons and 20–60 MeV bromine ions X Li, H Geng, M Lan, C Liu, D Yang, S He Physica B: Condensed Matter 405 (6), 1489-1494, 2010 | 22 | 2010 |
| In-depth investigation of low-energy proton irradiation effect on the structural and photoresponse properties of ε-Ga2O3 thin films Y Yang, H Zhu, L Wang, Y Jiang, T Wang, C Liu, B Li, W Tang, Z Wu, ... Materials & Design 221, 110944, 2022 | 21 | 2022 |
| Characteristic of displacement defects in npn transistors caused by various heavy ion irradiations X Li, J Yang, C Liu, P Li, Y Zhao, G Liu IEEE Transactions on Nuclear Science 64 (3), 976-982, 2017 | 21 | 2017 |
| Ionization damage in NPN transistors caused by lower energy electrons X Li, J Xiao, C Liu, Z Zhao, H Geng, M Lan, D Yang, S He Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010 | 20 | 2010 |
| Research of single-event burnout in 4H-SiC JBS diode by low carrier lifetime control CH Yu, Y Wang, XJ Li, CM Liu, X Luo, F Cao IEEE Transactions on Electron Devices 65 (12), 5434-5439, 2018 | 19 | 2018 |
Xingji LiHarbin Institute of TechnologyVerified email at hit.edu.cn
