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Jiancheng Yang. PhD
Jiancheng Yang. PhD
Keysight Technologies
Verified email at keysight.com
Title
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Cited by
Year
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 2018
22322018
2300V reverse breakdown voltage Ga2O3 Schottky rectifiers
J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata
ECS Journal of Solid State Science and Technology 7 (5), Q92, 2018
2152018
High Breakdown Voltage (−201) -Ga2O3 Schottky Rectifiers
J Yang, S Ahn, F Ren, SJ Pearton, S Jang, A Kuramata
IEEE Electron Device Letters 38 (7), 906-909, 2017
1982017
Radiation damage effects in Ga 2 O 3 materials and devices
J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov
Journal of Materials Chemistry C 7 (1), 10-24, 2019
1962019
High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata
Applied Physics Letters 110 (19), 2017
1922017
Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, J Yang, F Ren, ...
Applied Physics Letters 112 (3), 2018
1182018
Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3
AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, SJ Pearton, ...
Applied Physics Letters 113 (9), 2018
912018
Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW. cm-2 figure-of-merit
J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata
AIP Advances 8 (5), 2018
892018
Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length
J Lee, E Flitsiyan, L Chernyak, J Yang, F Ren, SJ Pearton, B Meyler, ...
Applied Physics Letters 112 (8), 2018
792018
1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers
J Yang, F Ren, SJ Pearton, G Yang, J Kim, A Kuramata
Journal of Vacuum Science & Technology B 35 (3), 2017
782017
Annealing of dry etch damage in metallized and bare (-201) Ga2O3
J Yang, F Ren, R Khanna, K Bevlin, D Geerpuram, LC Tung, J Lin, ...
Journal of Vacuum Science & Technology B 35 (5), 2017
722017
Effect of surface treatments on electrical properties of β-Ga2O3
J Yang, Z Sparks, F Ren, SJ Pearton, M Tadjer
Journal of Vacuum Science & Technology B 36 (6), 2018
712018
Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays
J Yang, M Xian, P Carey, C Fares, J Partain, F Ren, M Tadjer, E Anber, ...
Applied Physics Letters 114 (23), 2019
682019
A comparative study of wet etching and contacts on (2¯ 01) and (010) oriented β-Ga2O3
S Jang, S Jung, K Beers, J Yang, F Ren, A Kuramata, SJ Pearton, KH Baik
Journal of Alloys and Compounds 731, 118-125, 2018
662018
Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current
EB Yakimov, AY Polyakov, NB Smirnov, IV Shchemerov, J Yang, F Ren, ...
Journal of Applied Physics 123 (18), 2018
642018
Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes
J Yang, S Ahn, F Ren, R Khanna, K Bevlin, D Geerpuram, SJ Pearton, ...
Applied Physics Letters 110 (14), 2017
642017
Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
PH Carey, J Yang, F Ren, DC Hays, SJ Pearton, S Jang, A Kuramata, ...
AIP Advances 7 (9), 2017
572017
Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers
PH Carey, J Yang, F Ren, DC Hays, SJ Pearton, A Kuramata, ...
Journal of Vacuum Science & Technology B 35 (6), 2017
552017
Vertical Geometry, 2-A Forward Current Ga2O3Schottky Rectifiers on Bulk Ga2O3Substrates
J Yang, F Ren, SJ Pearton, A Kuramata
IEEE Transactions on Electron Devices 65 (7), 2790-2796, 2018
542018
Inductively coupled plasma etching of bulk, single-crystal Ga2O3
J Yang, S Ahn, F Ren, S Pearton, R Khanna, K Bevlin, D Geerpuram, ...
Journal of Vacuum Science & Technology B 35 (3), 2017
502017
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