Au-TiB x -n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts OA Ageev, AE Belyaev, NS Boltovets, VN Ivanov, RV Konakova, ... Semiconductors 43 (7), 865-871, 2009 | 154 | 2009 |
Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers A Belyaev, O Polupan, W Dallas, S Ostapenko, D Hess, J Wohlgemuth Applied Physics Letters 88 (11), 111907, 2006 | 88 | 2006 |
Карбид кремния: технология, свойства, применение ОА Агеев, АЕ Беляев, НС Болтовец, ВС Киселев, РВ Конакова, ... ИСМа, 2010 | 76 | 2010 |
Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, AY Avksentyev, ... Applied physics letters 82 (5), 748-750, 2003 | 64 | 2003 |
Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs SA Vitusevich, N Klein, AE Belyaev, SV Danylyuk, MV Petrychuk, ... physica status solidi (a) 195 (1), 101-105, 2003 | 51 | 2003 |
Mechanism of contact resistance formation in ohmic contacts with high dislocation density AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ... Journal of applied physics 111 (8), 083701, 2012 | 46 | 2012 |
Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants O Gryshkov, NI Klyui, VP Temchenko, VS Kyselov, A Chatterjee, ... Materials Science and Engineering: C 68, 143-152, 2016 | 45 | 2016 |
Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers A Belyaev, O Polupan, S Ostapenko, D Hess, JP Kalejs Semiconductor science and technology 21 (3), 254, 2006 | 44 | 2006 |
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ... Nanoscale research letters 7 (1), 1-9, 2012 | 38 | 2012 |
Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate VP Kladko, AF Kolomys, MV Slobodian, VV Strelchuk, VG Raycheva, ... Journal of applied physics 105 (6), 063515, 2009 | 37 | 2009 |
Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, VN Sokolov, ... Applied physics letters 80 (12), 2126-2128, 2002 | 37 | 2002 |
Mechanism of mobility increase of the two-dimensional electron gas in heterostructures under small dose gamma irradiation AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ... Journal of applied physics 103 (8), 083707, 2008 | 36 | 2008 |
Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures CT Foxon, SV Novikov, AE Belyaev, LX Zhao, O Makarovsky, DJ Walker, ... physica status solidi (c), 2389-2392, 2003 | 35 | 2003 |
Фазы внедрения в технологии полупроводниковых приборов и СБИС ОА Агеев, АЕ Беляев, НС Болтовец, РВ Конакова, ВВ Миленин, ... Харьков: НТК Институт монокристаллов, 2008 | 33 | 2008 |
Noise and transport characterization of single molecular break junctions with individual molecule VA Sydoruk, D Xiang, SA Vitusevich, MV Petrychuk, A Vladyka, Y Zhang, ... Journal of applied physics 112 (1), 014908, 2012 | 30 | 2012 |
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ... Semiconductors 42 (6), 689-693, 2008 | 30 | 2008 |
Mechanisms of current formation in resonant tunneling heterostructures MV Petrychuk, AE Belyaev, AM Kurakin, SV Danylyuk, N Klein, ... Applied physics letters 91 (22), 222112, 2007 | 30 | 2007 |
Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well A Patane, A Polimeni, L Eaves, PC Main, M Henini, AE Belyaev, ... Physical Review B 62 (20), 13595, 2000 | 30 | 2000 |
Hot-electron transport in two-dimensional conducting channels BA Danilchenko, SE Zelensky, E Drok, SA Vitusevich, SV Danylyuk, ... Applied physics letters 85 (22), 5421-5423, 2004 | 29 | 2004 |
Nonlinear charging effect of quantum dots in a p− i− n diode G Kießlich, A Wacker, E Schöll, SA Vitusevich, AE Belyaev, SV Danylyuk, ... Physical Review B 68 (12), 125331, 2003 | 29 | 2003 |