| Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 164 | 2018 |
| A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ... Microelectronics Reliability 81, 186-194, 2018 | 60 | 2018 |
| Statistical assessment of the full VG/VDdegradation space using dedicated device arrays E Bury, B Kaczer, K Chuang, J Franco, P Weckx, A Chasin, M Simicic, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2D-5.1-2D-5.6, 2017 | 25 | 2017 |
| The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits B Kaczer, J Franco, P Weckx, PJ Roussel, M Simicic, V Putcha, E Bury, ... Solid-State Electronics 125, 52-62, 2016 | 23 | 2016 |
| Understanding the impact of time-dependent random variability on analog ICs: From single transistor measurements to circuit simulations M Simicic, P Weckx, B Parvais, P Roussel, B Kaczer, G Gielen IEEE Transactions on very large scale integration (VLSI) Systems 27 (3), 601-610, 2018 | 22 | 2018 |
| Si/SiGe superlattice I/O FinFETs in a vertically-stacked gate-all-around horizontal nanowire technology G Hellings, H Mertens, A Subirats, E Simoen, T Schram, LA Ragnarsson, ... 2018 IEEE Symposium on VLSI Technology, 85-86, 2018 | 22 | 2018 |
| Self-heating-aware CMOS reliability characterization using degradation maps E Bury, A Chasin, B Kaczer, KH Chuang, J Franco, M Simicic, P Weckx, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 2A. 3-1-2A. 3-6, 2018 | 20 | 2018 |
| Advanced MOSFET variability and reliability characterization array M Simicic, V Putcha, B Parvais, P Weckx, B Kaczer, G Groeseneken, ... 2015 IEEE International Integrated Reliability Workshop (IIRW), 73-76, 2015 | 20 | 2015 |
| Defect-based compact modeling for RTN and BTI variability P Weckx, M Simicic, K Nomoto, M Ono, B Parvais, B Kaczer, P Raghavan, ... 2017 IEEE International Reliability Physics Symposium (IRPS), CR-7.1-CR-7.6, 2017 | 18 | 2017 |
| Smart-array for pipelined BTI characterization V Putcha, M Simicic, P Weckx, B Parvais, J Franco, B Kaczer, D Linten, ... 2015 IEEE International Integrated Reliability Workshop (IIRW), 95-98, 2015 | 11 | 2015 |
| Experimental evidences and simulations of trap generation along a percolation path L Gerrer, R Hussin, SM Amoroso, J Franco, P Weckx, M Simicic, ... 2015 45th European Solid State Device Research Conference (ESSDERC), 226-229, 2015 | 11 | 2015 |
| Characterization and simulation methodology for time-dependent variability in advanced technologies P Weckx, B Kaczer, P Raghavan, J Franco, M Simicic, PJ Roussel, ... 2015 IEEE Custom Integrated Circuits Conference (CICC), 1-8, 2015 | 10 | 2015 |
| Reliability aware simulation flow: From TCAD calibration to circuit level analysis R Hussin, L Gerrer, J Ding, SM Amaroso, L Wang, M Semicic, P Weckx, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 10 | 2015 |
| Comparative experimental analysis of time-dependent variability using a transistor test array M Simicic, A Subirats, P Weckx, B Kaczer, J Franco, P Roussel, D Linten, ... 2016 IEEE International Reliability Physics Symposium (IRPS), XT-10-1-XT-10-6, 2016 | 9 | 2016 |
| ESD study on a-IGZO TFT device architectures M Simicic, G Hellings, SH Chen, K Myny, D Linten 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-7, 2018 | 8 | 2018 |
| Scaling CMOS beyond Si FinFET: an analog/RF perspective B Parvais, G Hellings, M Simicic, P Weckx, J Mitard, D Jang, ... 2018 48th European Solid-State Device Research Conference (ESSDERC), 158-161, 2018 | 8 | 2018 |
| Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors M Simicic, NR Ashif, G Hellings, SH Chen, M Nag, AJ Kronemeijer, ... Microelectronics Reliability 108, 113632, 2020 | 7 | 2020 |
| Benchmarking time-dependent variability of junctionless nanowire FETs B Kaczer, G Rzepa, J Franco, P Weckx, A Chasin, V Putcha, E Bury, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2D-6.1-2D-6.7, 2017 | 6 | 2017 |
| External I/O interfaces in sub-5nm GAA NS Technology and STCO Scaling Options WC Chen, SH Chen, G Hellings, E Bury, M Simicic, Z Wu, G Van der Plas, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 5 | 2021 |
| Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials Y Kim, B Kaczer, D Verreck, A Grill, D Kim, J Song, J Diaz‐Fortuny, A Vici, ... Advanced Electronic Materials 7 (9), 2100348, 2021 | 4 | 2021 |
Dimitri LintenImecGeverifieerd e-mailadres voor imec.be
