BiCMOS technology improvements for microwave application WD van Noort, A Rodriguez, HJ Sun, F Zaato, N Zhang, T Nesheiwat, ... 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 93-96, 2008 | 66 | 2008 |
Revised method for extraction of the thermal resistance applied to bulk and SOI SiGe HBTs T Vanhoucke, HMJ Boots, WD Van Noort IEEE Electron Device Letters 25 (3), 150-152, 2004 | 59 | 2004 |
Inductive and capacitive elements for semiconductor technologies with minimum pattern density requirements CJ Detcheverry, WD Van Noort US Patent 8,653,926, 2014 | 48 | 2014 |
Package for a high-frequency electronic device ABM Jansman, R Dekker, GAM Hurkx, WD Van Noort, ALAM Kemmeren US Patent 7,098,530, 2006 | 33 | 2006 |
QUBiC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for'silicon-based'RF-system-in-package environment P Deixler, T Letavic, T Mahatdejkul, Y Bouttement, R Brock, PC Tan, ... Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 …, 2005 | 31 | 2005 |
CBC8: A 0.25 µm SiGe-CBiCMOS technology platform on thick-film SOI for high-performance analog and RF IC design JA Babcock, G Cestra, W van Noort, P Allard, S Ruby, J Tao, R Malone, ... 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 41-44, 2010 | 26 | 2010 |
Bipolar transistor epilayer design using the MAIDS mixed-level simulator LCN de Vreede, HC de Graaff, JA Willemen, W van Noort, R Jos, ... IEEE Journal of Solid-State Circuits 34 (9), 1331-1338, 1999 | 26 | 1999 |
Reduction of UHF power transistor distortion with a nonuniform collector doping profile WD van Noort, LCN de Vreede, HFF Jos, LK Nanver, JW Slotboom IEEE Journal of Solid-State Circuits 36 (9), 1399-1406, 2001 | 23 | 2001 |
BiCMOS integration of multiple-times-programmable non-volatile memories W Van NOORT, TJ Letavic, F Zaato, C Mandhare US Patent 7,989,875, 2011 | 22 | 2011 |
A novel fully self-aligned SiGe: C HBT architecture featuring a single-step epitaxial collector-base process J Donkers, M Kramer, S Van Huylenbroeck, LJ Choi, P Meunier-Beillard, ... 2007 IEEE International Electron Devices Meeting, 655-658, 2007 | 20 | 2007 |
Control of arsenic doping during low temperature CVD epitaxy of silicon (100) WD Van Noort, LK Nanver, JW Slotboom Journal of the Electrochemical Society 147 (11), 4301, 2000 | 20 | 2000 |
Method of fabricating a dual gate FET WD Van Noort, FP Widdershoven, R Surdeanu US Patent 7,741,182, 2010 | 19 | 2010 |
The effect of copper design rules on inductor performance C Detcheverry, W van Noort, R Hoofman, L Tiemeijer, VH Nguyen, ... ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003 | 19 | 2003 |
Semiconductor device and method of manufacturing such a device E Hijzen, J Melai, W Van Noort, J Donkers, P Meunier-Beillard, ... US Patent 8,373,236, 2013 | 16 | 2013 |
Thermal resistance of (H) BTs on bulk Si, SOI, and glass WD Van Noort, R Dekker Proc. IEEE BCTM, 129-132, 2003 | 16 | 2003 |
Self-aligned epitaxially grown bipolar transistor P Magnee, W Van Noort, J Donkers US Patent 7,883,954, 2011 | 15 | 2011 |
On the Accuracy of the Parameters Extracted From -Parameter Measurements Taken on Differential IC Transmission Lines LF Tiemeijer, RMT Pijper, W van Noort IEEE transactions on microwave theory and techniques 57 (6), 1581-1588, 2009 | 15 | 2009 |
The power conversion efficiency of visible light emitting devices in standard BiCMOS processes PI Kuindersma, T Hoang, J Schmitz, MN Vijayaraghavan, M Dijkstra, ... 2008 5th IEEE International Conference on Group IV Photonics, 256-258, 2008 | 15 | 2008 |
On the Use of a SiGe Spike in the Emitter to Improve the Product of High-Speed SiGe HBTs LJ Choi, S Van Huylenbroeck, A Piontek, A Sibaja-Hernandez, E Kunnen, ... IEEE electron device letters 28 (4), 270-272, 2007 | 15 | 2007 |
Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI JA Babcock, LJ Choi, A Sadovnikov, W van Noort, C Estonilo, P Allard, ... 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 145-148, 2010 | 13 | 2010 |