| Size-dependent reactivity of diamond nanoparticles OA Williams, J Hees, C Dieker, W Jäger, L Kirste, CE Nebel ACS nano 4 (8), 4824-4830, 2010 | 431 | 2010 |
| Elastic modulus and coefficient of thermal expansion of piezoelectric Al1− xScxN (up to x= 0.41) thin films Y Lu, M Reusch, N Kurz, A Ding, T Christoph, M Prescher, L Kirste, ... APL Materials 6 (7), 2018 | 100 | 2018 |
| GaInAs∕ AlAsSb quantum-cascade lasers operating up to 400K Q Yang, C Manz, W Bronner, C Mann, L Kirste, K Köhler, J Wagner Applied Physics Letters 86 (13), 2005 | 85 | 2005 |
| Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators N Kurz, A Ding, DF Urban, Y Lu, L Kirste, NM Feil, A Žukauskaitė, ... Journal of Applied Physics 126 (7), 2019 | 82 | 2019 |
| Densification of thin aluminum oxide films by thermal treatments V Cimalla, M Baeumler, L Kirste, M Prescher, B Christian, T Passow, ... Materials Sciences and Applications 5 (08), 628, 2014 | 82 | 2014 |
| Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ... CrystEngComm 18 (19), 3488-3497, 2016 | 80 | 2016 |
| Metal‐organic chemical vapor deposition of aluminum scandium nitride S Leone, J Ligl, C Manz, L Kirste, T Fuchs, H Menner, M Prescher, ... physica status solidi (RRL)–Rapid Research Letters 14 (1), 1900535, 2020 | 79 | 2020 |
| Surface morphology and microstructure of pulsed DC magnetron sputtered piezoelectric AlN and AlScN thin films Y Lu, M Reusch, N Kurz, A Ding, T Christoph, L Kirste, V Lebedev, ... physica status solidi (a) 215 (9), 1700559, 2018 | 72 | 2018 |
| GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE T Lim, R Aidam, P Waltereit, T Henkel, R Quay, R Lozar, T Maier, L Kirste, ... IEEE Electron Device Letters 31 (7), 671-673, 2010 | 68 | 2010 |
| Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1− xN K Köhler, R Gutt, J Wiegert, L Kirste Journal of Applied Physics 113 (7), 2013 | 67 | 2013 |
| Chemically ordered alloys: Spontaneous formation of natural quantum wells M Albrecht, L Lymperakis, J Neugebauer, JE Northrup, L Kirste, M Leroux, ... Physical Review B 71 (3), 035314, 2005 | 66 | 2005 |
| Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter J Däubler, T Passow, R Aidam, K Köhler, L Kirste, M Kunzer, J Wagner Applied Physics Letters 105 (11), 2014 | 65 | 2014 |
| Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures P Waltereit, S Müller, K Bellmann, C Buchheim, R Goldhahn, K Köhler, ... Journal of Applied Physics 106 (2), 2009 | 62 | 2009 |
| Optical constants and band gap of wurtzite Al1− xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x= 0.41 M Baeumler, Y Lu, N Kurz, L Kirste, M Prescher, T Christoph, J Wagner, ... Journal of Applied Physics 126 (4), 2019 | 60 | 2019 |
| X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond Method N Herres, L Kirste, H Obloh, K Köhler, J Wagner, P Koidl Materials Science and Engineering: B 91, 425-432, 2002 | 58 | 2002 |
| Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties O Ambacher, B Christian, N Feil, DF Urban, C Elsässer, M Prescher, ... Journal of Applied Physics 130 (4), 2021 | 57 | 2021 |
| Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE K Frei, R Trejo-Hernández, S Schütt, L Kirste, M Prescher, R Aidam, ... Japanese Journal of Applied Physics 58 (SC), SC1045, 2019 | 52 | 2019 |
| Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering RE Sah, L Kirste, M Baeumler, P Hiesinger, V Cimalla, V Lebedev, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (3 …, 2010 | 51 | 2010 |
| Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study J Bläsing, A Krost, J Hertkorn, F Scholz, L Kirste, A Chuvilin, U Kaiser Journal of Applied Physics 105 (3), 2009 | 51 | 2009 |
| Near infrared absorption and room temperature photovoltaic response in AlN∕ GaN superlattices grown by metal-organic vapor-phase epitaxy E Baumann, FR Giorgetta, D Hofstetter, S Golka, W Schrenk, G Strasser, ... Applied physics letters 89 (4), 2006 | 51 | 2006 |
Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgVerified email at inatech.uni-freiburg.de
