Kazuki Nomoto
Kazuki Nomoto
Verified email at cornell.edu
Title
Cited by
Cited by
Year
Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV
Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ...
IEEE Electron Device Letters 39 (6), 869-872, 2018
1562018
1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon
M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
1552015
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ...
Applied Physics Letters 107 (24), 243501, 2015
1342015
1.7-kV and 0.55- GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability
K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ...
IEEE Electron Device Letters 37 (2), 161-164, 2015
1322015
Over 3.0Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates
Y Hatakeyama, K Nomoto, N Kaneda, T Kawano, T Mishima, T Nakamura
IEEE electron device letters 32 (12), 1674-1676, 2011
1232011
High-breakdown-voltage and low-specific-on-resistance GaN p–n junction diodes on free-standing GaN substrates fabricated through low-damage field-plate process
Y Hatakeyama, K Nomoto, A Terano, N Kaneda, T Tsuchiya, T Mishima, ...
Japanese Journal of Applied Physics 52 (2R), 028007, 2013
992013
Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors
Z Hu, K Nomoto, W Li, Z Zhang, N Tanen, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (12), 122103, 2018
842018
Over 1.0 kV GaN pn junction diodes on free‐standing GaN substrates
K Nomoto, Y Hatakeyama, H Katayose, N Kaneda, T Mishima, ...
physica status solidi (a) 208 (7), 1535-1537, 2011
822011
1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2
W Li, Z Hu, K Nomoto, Z Zhang, JY Hsu, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (20), 202101, 2018
752018
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2
W Li, K Nomoto, Z Hu, D Jena, HG Xing
IEEE Electron Device Letters 41 (1), 107-110, 2019
712019
Design and realization of GaN trench junction-barrier-Schottky-diodes
W Li, K Nomoto, M Pilla, M Pan, X Gao, D Jena, HG Xing
IEEE Transactions on Electron Devices 64 (4), 1635-1641, 2017
512017
1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy
Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing
IEEE Electron Device Letters 38 (8), 1071-1074, 2017
492017
GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2
K Nomoto, Z Hu, B Song, M Zhu, M Qi, R Yan, V Protasenko, E Imhoff, ...
2015 IEEE international electron devices meeting (IEDM), 9.7. 1-9.7. 4, 2015
492015
High breakdown single-crystal GaN pn diodes by molecular beam epitaxy
M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ...
Applied Physics Letters 107 (23), 232101, 2015
492015
Remarkable reduction of on-resistance by ion implantation in GaN/AlGaN/GaN HEMTs with low gate leakage current
K Nomoto, T Tajima, T Mishima, M Satoh, T Nakamura
IEEE electron device letters 28 (11), 939-941, 2007
472007
2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current
W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu, K Sasaki, A Kuramata, ...
2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018
412018
Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts
B Song, M Zhu, Z Hu, M Qi, K Nomoto, X Yan, Y Cao, D Jena, HG Xing
IEEE electron Device letters 37 (1), 16-19, 2015
402015
High breakdown voltage in RF AlN/GaN/AlN quantum well HEMTs
A Hickman, R Chaudhuri, SJ Bader, K Nomoto, K Lee, HG Xing, D Jena
IEEE Electron Device Letters 40 (8), 1293-1296, 2019
382019
Strained GaN quantum-well FETs on single crystal bulk AlN substrates
M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ...
Applied Physics Letters 110 (6), 063501, 2017
362017
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
SJ Bader, R Chaudhuri, K Nomoto, A Hickman, Z Chen, HW Then, ...
IEEE Electron Device Letters 39 (12), 1848-1851, 2018
352018
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