Eoin O'Reilly
Eoin O'Reilly
Research Professor, Tyndall National Institute
Verified email at tyndall.ie
Cited by
Cited by
Electronic and atomic structure of amorphous carbon
J Robertson, EP O’reilly
Physical Review B 35 (6), 2946, 1987
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
PW Fry, IE Itskevich, DJ Mowbray, MS Skolnick, JJ Finley, JA Barker, ...
Physical review letters 84 (4), 733, 2000
Theory of defects in vitreous silicon dioxide
EP O'Reilly, J Robertson
Physical Review B 27 (6), 3780, 1983
Valence band engineering in strained-layer structures
EP O'Reilly
Semiconductor Science and Technology 4, 121, 1989
Theory of the electronic structure of GaN/AlN hexagonal quantum dots
AD Andreev, EP O’Reilly
Physical Review B 62 (23), 15851, 2000
Theory of enhanced bandgap non-parabolicity in GaN x As 1− x and related alloys
A Lindsay, EP O'Reilly
Solid state communications 112 (8), 443-447, 1999
Strain distributions in quantum dots of arbitrary shape
AD Andreev, JR Downes, DA Faux, EP OReilly
Journal of applied physics 86 (1), 297-305, 1999
(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
PJ Klar, H Grüning, J Koch, S Schäfer, K Volz, W Stolz, W Heimbrodt, ...
Physical Review B 64 (12), 121203, 2001
Band-structure engineering in strained semiconductor lasers
EP O'Reilly, AR Adams
IEEE Journal of Quantum electronics 30 (2), 366-379, 1994
Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys
A Lindsay, EP O'Reilly
Physical review letters 93 (19), 196402, 2004
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
M Usman, CA Broderick, A Lindsay, EP O’Reilly
Physical Review B 84 (24), 245202, 2011
Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots
JA Barker, EP O’Reilly
Physical Review B 61 (20), 13840, 2000
Dipole nanolaser
IE Protsenko, AV Uskov, OA Zaimidoroga, VN Samoilov, EP O’reilly
Physical Review A 71 (6), 063812, 2005
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
IEEE Journal of selected topics in quantum electronics 8 (4), 801-810, 2002
Band engineering in dilute nitride and bismide semiconductor lasers
CA Broderick, M Usman, SJ Sweeney, EP O’Reilly
Semiconductor Science and Technology 27 (9), 094011, 2012
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
IEEE Journal of selected topics in quantum electronics 9 (5), 1228-1238, 2003
Tight-binding and k· p models for the electronic structure of Ga (In) NAs and related alloys
EP O'Reilly, A Lindsay, S Tomić, M Kamal-Saadi
Semiconductor science and technology 17 (8), 870, 2002
Evaluation of various approximations used in the envelope-function method
AT Meney, B Gonul, EP O’Reilly
Physical Review B 50 (15), 10893, 1994
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs_ {1− x} N_ {x}
F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ...
Physical Review B 73 (7), 073201, 2006
Electronic structure of amorphous III-V and II-VI compound semiconductors and their defects
EP O’reilly, J Robertson
Physical Review B 34 (12), 8684, 1986
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