| Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing H Sakurai, M Omori, S Yamada, Y Furukawa, H Suzuki, T Narita, ... Applied Physics Letters 115 (14), 2019 | 132 | 2019 |
| P-type doping of GaN by magnesium ion implantation A Zkria, Y Katamune, T Yoshitake, S Ohmagari, T Hanada Applied Physics Express 10, 016501, 2017 | 102 | 2017 |
| Design and fabrication of GaN pn junction diodes with negative beveled-mesa termination T Maeda, T Narita, H Ueda, M Kanechika, T Uesugi, T Kachi, T Kimoto, ... IEEE Electron Device Letters 40 (6), 941-944, 2019 | 94 | 2019 |
| The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE T Narita, K Tomita, Y Tokuda, T Kogiso, M Horita, T Kachi Journal of Applied Physics 124 (21), 2018 | 84 | 2018 |
| Optical and electrical properties of grown on a 7° off-axis (001)Si substrate T Hikosaka, T Narita, Y Honda, M Yamaguchi, N Sawaki Applied physics letters 84 (23), 4717-4719, 2004 | 82 | 2004 |
| Progress on and challenges of p-type formation for GaN power devices T Narita, H Yoshida, K Tomita, K Kataoka, H Sakurai, M Horita, ... Journal of Applied Physics 128 (9), 2020 | 75 | 2020 |
| Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations N Sawada, T Narita, M Kanechika, T Uesugi, T Kachi, M Horita, T Kimoto, ... Applied Physics Express 11 (4), 041001, 2018 | 72 | 2018 |
| Impact ionization coefficients and critical electric field in GaN T Maeda, T Narita, S Yamada, T Kachi, T Kimoto, M Horita, J Suda Journal of Applied Physics 129 (18), 2021 | 69 | 2021 |
| Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device D Kikuta, K Itoh, T Narita, T Mori Journal of Vacuum Science & Technology A 35 (1), 2017 | 65 | 2017 |
| The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate T Narita, Y Tokuda, T Kogiso, K Tomita, T Kachi Journal of Applied Physics 123 (16), 2018 | 59 | 2018 |
| Wide range doping control and defect characterization of GaN layers with various Mg concentrations N Tetsuo, I Nobuyuki, T Kazuyoshi, K Keita, K Tetsu Journal of Applied Physics 124 (16), 2018 | 56 | 2018 |
| Study of etching‐induced damage in GaN by hard X‐ray photoelectron spectroscopy T Narita, D Kikuta, N Takahashi, K Kataoka, Y Kimoto, T Uesugi, T Kachi, ... physica status solidi (a) 208 (7), 1541-1544, 2011 | 44 | 2011 |
| Overview of carrier compensation in GaN layers grown by MOVPE: Toward the application of vertical power devices T Narita, K Tomita, K Kataoka, Y Tokuda, T Kogiso, H Yoshida, N Ikarashi, ... Japanese Journal of Applied Physics 59 (SA), SA0804, 2019 | 43 | 2019 |
| Room-temperature photoluminescence lifetime for the near-band-edge emission of (0001¯) p-type GaN fabricated by sequential ion-implantation of Mg and H K Shima, H Iguchi, T Narita, K Kataoka, K Kojima, A Uedono, SF Chichibu Applied Physics Letters 113 (19), 2018 | 43 | 2018 |
| Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN S Matsumoto, M Toguchi, K Takeda, T Narita, T Kachi, T Sato Japanese Journal of Applied Physics 57 (12), 121001, 2018 | 41 | 2018 |
| Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis K Iwata, H Sakurai, S Arai, T Nakashima, T Narita, K Kataoka, ... Journal of Applied Physics 127 (10), 2020 | 39 | 2020 |
| Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing H Sakurai, T Narita, M Omori, S Yamada, A Koura, M Iwinska, K Kataoka, ... Applied Physics Express 13 (8), 086501, 2020 | 38 | 2020 |
| Low resistivity of highly Si-doped n-type Al0. 62Ga0. 38N layer by suppressing self-compensation K Nagata, H Makino, T Yamamoto, K Kataoka, T Narita, Y Saito Applied Physics Express 13 (2), 025504, 2020 | 37 | 2020 |
| Identification of origin of EC–0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase … M Horita, T Narita, T Kachi, J Suda Applied Physics Express 13 (7), 071007, 2020 | 36 | 2020 |
| Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices D Kikuta, K Ito, T Narita, T Kachi Applied Physics Express 13 (2), 026504, 2020 | 36 | 2020 |
Suda JunNagoya University / Kyoto UniversityVerified email at nuee.nagoya-u.ac.jp
