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Roberta Nipoti
Roberta Nipoti
CNR-IMM
Verified email at bo.imm.cnr.it
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Cited by
Year
Titanium silicide formation: Effect of oxygen distribution in the metal film
M Berti, AV Drigo, C Cohen, J Siejka, GG Bentini, R Nipoti, S Guerri
Journal of applied physics 55 (10), 3558-3565, 1984
1281984
Spiral and concentric-circle walls observed by lorentz microscopy(Rotation of very thin nickel-iron films in a constant field, observing inward-growing spirals and concentric …
MS Cohen
JOURNAL OF APPLIED PHYSICS, 1962
124*1962
Growth and structure of titanium silicide phases formed by thin Ti films on Si crystals
GG Bentini, R Nipoti, A Armigliato, M Berti, AV Drigo, C Cohen
Journal of Applied Physics 57 (2), 270-275, 1985
791985
Ion implantation induced swelling in 6H-SiC
R Nipoti, E Albertazzi, M Bianconi, R Lotti, G Lulli, M Cervera, A Carnera
Applied physics letters 70 (25), 3425-3427, 1997
761997
Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions
F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, ...
IEEE transactions on nuclear science 53 (3), 1557-1563, 2006
712006
Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures
HM Ayedh, R Nipoti, A Hallén, BG Svensson
Applied Physics Letters 107 (25), 2015
692015
Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
HM Ayedh, V Bobal, R Nipoti, A Hallén, BG Svensson
Journal of Applied Physics 115 (1), 2014
682014
Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET
F Moscatelli, A Poggi, S Solmi, R Nipoti
IEEE Transactions on Electron Devices 55 (4), 961-967, 2008
652008
Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra
G Lulli, E Albertazzi, M Bianconi, GG Bentini, R Nipoti, R Lotti
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000
642000
Carbon-cap for ohmic contacts on ion-implanted 4H–SiC
R Nipoti, F Mancarella, F Moscatelli, R Rizzoli, S Zampolli, M Ferri
Electrochemical and Solid-State Letters 13 (12), H432, 2010
622010
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison
E Albertazzi, M Bianconi, G Lulli, R Nipoti, M Cantiano
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
601996
Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation
A Parisini, R Nipoti
Journal of Applied Physics 114 (24), 2013
582013
Electrical properties of Al2O3∕ 4H‐SiC structures grown by atomic layer chemical vapor deposition
M Avice, U Grossner, I Pintilie, BG Svensson, M Servidori, R Nipoti, ...
Journal of Applied Physics 102 (5), 2007
552007
Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC
R Nipoti, R Scaburri, A Hallén, A Parisini
Journal of Materials Research 28, 17-22, 2013
522013
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si
G Lulli, E Albertazzi, M Bianconi, R Nipoti, M Cervera, A Carnera, ...
Journal of applied physics 82 (12), 5958-5964, 1997
521997
Microwave annealing of very high dose aluminum-implanted 4H-SiC
R Nipoti, A Nath, MV Rao, A Hallén, A Carnera, YL Tian
Applied Physics Express 4 (11), 111301, 2011
422011
Analysis of electron traps at the 4H–SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
I Pintilie, CM Teodorescu, F Moscatelli, R Nipoti, A Poggi, S Solmi, ...
Journal of Applied Physics 108 (2), 2010
372010
Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC
F Moscatelli, A Scorzoni, A Poggi, GC Cardinali, R Nipoti
Semiconductor science and technology 18 (6), 554, 2003
352003
Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes
A Nath, MV Rao, F Moscatelli, M Puzzanghera, F Mancarella, R Nipoti
2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014
342014
Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions
A Poggi, F Bergamini, R Nipoti, S Solmi, M Canino, A Carnera
Applied physics letters 88 (16), 2006
342006
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