Stanislav Tyaginov
Stanislav Tyaginov
Marie Curie fellow, imec
Verified email at imec.be
Title
Cited by
Cited by
Year
Predictive hot-carrier modeling of n-channel MOSFETs
M Bina, S Tyaginov, J Franco, K Rupp, Y Wimmer, D Osintsev, B Kaczer, ...
IEEE Transactions on Electron Devices 61 (9), 3103-3110, 2014
592014
Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor
MI Vexler, SE Tyaginov, AF Shulekin
Journal of Physics: Condensed Matter 17 (50), 8057, 2005
552005
Interface traps density-of-states as a vital component for hot-carrier degradation modeling
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
Microelectronics Reliability 50 (9-11), 1267-1272, 2010
532010
Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs
S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser
IEEE Electron Device Letters 37 (1), 84-87, 2015
432015
Hot-carrier degradation caused interface state profile—Simulation versus experiment
I Starkov, S Tyaginov, H Enichlmair, J Cervenka, C Jungemann, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
352011
Physics-based hot-carrier degradation modeling
SE Tyaginov, I Starkov, H Enichlmair, JM Park, C Jungemann, T Grasser
ECS Transactions 35 (4), 321, 2011
332011
Observation of normally distributed energies for interface trap recovery after hot-carrier degradation
G Pobegen, S Tyaginov, M Nelhiebel, T Grasser
IEEE electron device letters 34 (8), 939-941, 2013
312013
Sleep apnoea and stroke
S Sharma, A Culebras
Stroke and vascular neurology 1 (4), 185-191, 2016
292016
Modeling of hot-carrier degradation: Physics and controversial issues
S Tyaginov, T Grasser
2012 IEEE International Integrated Reliability Workshop Final Report, 206-215, 2012
272012
Origins and implications of increased channel hot carrier variability in nFinFETs
B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ...
2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015
262015
Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ ferroelectric∕ metal structure
LA Delimova, IV Grekhov, DV Mashovets, SE Tyaginov, S Shin, JM Koo, ...
Applied Physics Letters 87 (19), 192101, 2005
252005
Modeling of hot-carrier degradation in nLDMOS devices: Different approaches to the solution of the Boltzmann transport equation
P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, M Bina, ...
IEEE Transactions on Electron Devices 62 (6), 1811-1818, 2015
232015
Physical modeling of hot-carrier degradation for short-and long-channel MOSFETs
S Tyaginov, M Bina, J Franco, D Osintsev, O Triebl, B Kaczer, T Grasser
2014 IEEE International Reliability Physics Symposium, XT. 16.1-XT. 16.8, 2014
232014
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
S Tyaginov, I Starkov, O Triebl, H Ceric, T Grasser, H Enichlmair, JM Park, ...
2011 International Conference on Simulation of Semiconductor Processes and …, 2011
232011
A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
MI Vexler, SE Tyaginov, YY Illarionov, YK Sing, AD Shenp, VV Fedorov, ...
Semiconductors 47 (5), 686-694, 2013
192013
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
2010 17th IEEE International Symposium on the Physical and Failure Analysis …, 2010
192010
Electrical characterization and modeling of the structures with high-quality tunnel-thin fluoride layer
MI Vexler, NS Sokolov, SM Suturin, AG Banshchikov, SE Tyaginov, ...
Journal of Applied Physics 105 (8), 083716, 2009
182009
Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation
M Bina, K Rupp, S Tyaginov, O Triebl, T Grasser
2012 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2012
172012
Grekhov, Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution
IVG S.E. Tyaginov, M.I. Vexler, A.F. Shulekin
Solid-State Electronics 49 (7), 1192-1197, 2005
172005
A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs
S Tyaginov, M Bina, J Franco, Y Wimmer, D Osintsev, B Kaczer, T Grasser
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
162014
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