Stanislav Tyaginov
Stanislav Tyaginov
Marie Curie fellow, imec
Verified email at imec.be
TitleCited byYear
Predictive hot-carrier modeling of n-channel MOSFETs
M Bina, S Tyaginov, J Franco, K Rupp, Y Wimmer, D Osintsev, B Kaczer, ...
IEEE Transactions on Electron Devices 61 (9), 3103-3110, 2014
552014
Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor
MI Vexler, SE Tyaginov, AF Shulekin
Journal of Physics: Condensed Matter 17 (50), 8057, 2005
552005
Interface traps density-of-states as a vital component for hot-carrier degradation modeling
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
Microelectronics Reliability 50 (9-11), 1267-1272, 2010
522010
Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs
S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser
IEEE Electron Device Letters 37 (1), 84-87, 2015
372015
Hot-carrier degradation caused interface state profile—Simulation versus experiment
I Starkov, S Tyaginov, H Enichlmair, J Cervenka, C Jungemann, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
342011
Physics-based hot-carrier degradation modeling
SE Tyaginov, I Starkov, H Enichlmair, JM Park, C Jungemann, T Grasser
ECS Transactions 35 (4), 321-352, 2011
322011
Observation of normally distributed energies for interface trap recovery after hot-carrier degradation
G Pobegen, S Tyaginov, M Nelhiebel, T Grasser
IEEE Electron Device Letters 34 (8), 939-941, 2013
282013
Modeling of hot-carrier degradation: Physics and controversial issues
S Tyaginov, T Grasser
2012 IEEE International Integrated Reliability Workshop Final Report, 206-215, 2012
252012
Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ ferroelectric∕ metal structure
LA Delimova, IV Grekhov, DV Mashovets, SE Tyaginov, S Shin, JM Koo, ...
Applied Physics Letters 87 (19), 192101, 2005
252005
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
S Tyaginov, I Starkov, O Triebl, H Ceric, T Grasser, H Enichlmair, JM Park, ...
2011 International Conference on Simulation of Semiconductor Processes and …, 2011
242011
Origins and implications of increased channel hot carrier variability in nFinFETs
B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ...
2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015
232015
Modeling of hot-carrier degradation in nLDMOS devices: Different approaches to the solution of the Boltzmann transport equation
P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, M Bina, ...
IEEE Transactions on Electron Devices 62 (6), 1811-1818, 2015
192015
A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
MI Vexler, SE Tyaginov, YY Illarionov, YK Sing, AD Shenp, VV Fedorov, ...
Semiconductors 47 (5), 686-694, 2013
192013
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
2010 17th IEEE International Symposium on the Physical and Failure Analysis …, 2010
192010
Physical modeling of hot-carrier degradation for short-and long-channel MOSFETs
S Tyaginov, M Bina, J Franco, D Osintsev, O Triebl, B Kaczer, T Grasser
2014 IEEE International Reliability Physics Symposium, XT. 16.1-XT. 16.8, 2014
182014
Electrical characterization and modeling of the structures with high-quality tunnel-thin fluoride layer
MI Vexler, NS Sokolov, SM Suturin, AG Banshchikov, SE Tyaginov, ...
Journal of Applied Physics 105 (8), 083716, 2009
182009
Grekhov, Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution
IVG S.E. Tyaginov, M.I. Vexler, A.F. Shulekin
Solid-State Electronics 49 (7), 1192-1197, 2005
162005
Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation
M Bina, K Rupp, S Tyaginov, O Triebl, T Grasser
2012 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2012
152012
A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs
S Tyaginov, M Bina, J Franco, Y Wimmer, D Osintsev, B Kaczer, T Grasser
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
142014
Impact of the carrier distribution function on hot-carrier degradation modeling
S Tyaginov, I Starkov, C Jungemann, H Enichlmair, JM Park, T Grasser
2011 Proceedings of the European Solid-State Device Research Conference …, 2011
132011
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