Clement Merckling
Clement Merckling
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Room-temperature InP distributed feedback laser array directly grown on silicon
Z Wang, B Tian, M Pantouvaki, W Guo, P Absil, J Van Campenhout, ...
Nature Photonics 9 (12), 837-842, 2015
2342015
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
B Vincent, F Gencarelli, H Bender, C Merckling, B Douhard, DH Petersen, ...
Applied Physics Letters 99 (15), 152103, 2011
2122011
Method for manufacturing a low defect interface between a dielectric and a III-V compound
C Merckling
US Patent 8,314,017, 2012
1492012
Site selective integration of III–V materials on Si for nanoscale logic and photonic devices
M Paladugu, C Merckling, R Loo, O Richard, H Bender, J Dekoster, ...
Crystal growth & design 12 (10), 4696-4702, 2012
942012
Heteroepitaxy of InP on Si (001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
C Merckling, N Waldron, S Jiang, W Guo, N Collaert, M Caymax, ...
Journal of Applied Physics 115 (2), 023710, 2014
932014
An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates
N Waldron, C Merckling, W Guo, P Ong, L Teugels, S Ansar, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
832014
Capacitance–voltage characterization of GaAs–oxide interfaces
G Brammertz, HC Lin, K Martens, D Mercier, C Merckling, J Penaud, ...
Journal of the Electrochemical Society 155 (12), H945, 2008
802008
InGaAs gate-all-around nanowire devices on 300mm Si substrates
N Waldron, C Merckling, L Teugels, P Ong, SAU Ibrahim, F Sebaai, ...
IEEE Electron Device Letters 35 (11), 1097-1099, 2014
762014
Structural properties of epitaxial thin films grown by molecular beam epitaxy on Si(001)
G Delhaye, C Merckling, M El-Kazzi, G Saint-Girons, M Gendry, Y Robach, ...
Journal of applied physics 100 (12), 124109, 2006
752006
Effective reduction of interfacial traps in (001) gate stacks using surface engineering and thermal annealing
YC Chang, C Merckling, J Penaud, CY Lu, WE Wang, J Dekoster, ...
Applied physics letters 97 (11), 112901, 2010
712010
High FET Performance for a Future CMOS -Based Technology
F Bellenger, B De Jaeger, C Merckling, M Houssa, J Penaud, L Nyns, ...
IEEE Electron Device Letters 31 (5), 402-404, 2010
712010
Novel light source integration approaches for silicon photonics
Z Wang, A Abbasi, U Dave, A De Groote, S Kumari, B Kunert, C Merckling, ...
Laser & Photonics Reviews 11 (4), 1700063, 2017
702017
Polytypic InP nanolaser monolithically integrated on (001) silicon
Z Wang, B Tian, M Paladugu, M Pantouvaki, N Le Thomas, C Merckling, ...
Nano letters 13 (11), 5063-5069, 2013
672013
Germanium for advanced CMOS anno 2009: A SWOT analysis
M Caymax, G Eneman, F Bellenger, C Merckling, A Delabie, G Wang, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
672009
Electrical properties of III-V/oxide interfaces
G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375, 2009
672009
Border traps in Ge/III–V channel devices: Analysis and reliability aspects
E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013
642013
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
622011
Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate …
LK Chu, C Merckling, A Alian, J Dekoster, J Kwo, M Hong, M Caymax, ...
Applied Physics Letters 99 (4), 042908, 2011
612011
Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique
N Waldron, G Wang, ND Nguyen, T Orzali, C Merckling, G Brammertz, ...
ECS Transactions 45 (4), 115, 2012
572012
Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow
N Waldron, S Sioncke, J Franco, L Nyns, A Vais, X Zhou, HC Lin, ...
2015 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2015
482015
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