Rifat Zaman
Title
Cited by
Cited by
Year
Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor
SUZ Khan, M Hossain, FU Rahman, R Zaman, M Hossen, QDM Khosru
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015
142015
Novel Fingertip Image-Based Heart Rate Detection Methods for a Smartphone
R Zaman, CH Cho, K Hartmann-Vaccarezza, TN Phan, G Yoon, ...
Sensors, 2017
132017
Analytical modeling of gate capacitance and drain current of gate-all-around InxGa1−xAs nanowire MOSFET
SUZ Khan, MS Hossain, MO Hossen, FU Rahman, R Zaman, ...
2014 2nd International Conference on Electronic Design (ICED), 89-93, 2014
92014
A novel diversity method for smartphone camera-based heart rhythm signals in the presence of motion and noise artifacts
F Tabei, R Zaman, KH Foysal, R Kumar, Y Kim, JW Chong
PLOS ONE, 2019
62019
Capacitance-Voltage Characteristics of Gate-All-Around InxGa1-XAs Nanowire Transistor
QDM Khosru, SUZ Khan, MS Hossain, FU Rahman, MO Hossen, ...
ECS Transactions 53 (1), 169-176, 2013
52013
Motion and Noise Artifact-Resilient Atrial Fibrillation Detection Using a Smartphone
R Zaman, JW Chong, CH Cho, N Esa, DD McManus, KH Chon
2016 IEEE International Conference on Connected Health: Applications …, 2016
42016
Self-consistent determination of threshold voltage of In-rich Gate-All-Around InxGa1−xAs nanowire transistor incorporating quantum mechanical effect
R Zaman, SUZ Khan, MS Hossain, FU Rahman, MO Hossen, ...
2012 7th International Conference on Electrical and Computer Engineering …, 2012
32012
A Novel Heart Rate Monitoring Method using a Smartphone
R Zaman, CH Cho, Y Kim, JW Chong
Healthcare Innovation Point-Of-Care Technologies Conference (HI-POCT), 2016 …, 2016
22016
Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET
SUZ Khan, MS Hossain, FU Rahman, R Zaman, MO Hossen, ...
8th International Conference on Electrical and Computer Engineering, 100-103, 2014
22014
Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs
FU Rahman, MS Hossain, SUZ Khan, R Zaman, MO Hossen, ...
2012 7th International Conference on Electrical and Computer Engineering …, 2012
22012
Ballistic performance limit and gate leakage modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al2O3as Gate Dielectric
MO Hossen, MS Hossain, SUZ Khan, FU Rahman, R Zaman, ...
2012 IEEE International Conference on Electron Devices and Solid State …, 2012
22012
Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor
SUZ Khan, M Hossain, M Hossen, FU Rahman, R Zaman, QDM Khosru
arXiv preprint arXiv:1406.5257, 2014
12014
Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification
MS Hossain, SUZ Khan, MO Hossen, FU Rahman, R Zaman, ...
2012 IEEE International Conference on Electron Devices and Solid State …, 2012
12012
Low-Cost USB-Based Data-Logger for LVDT Sensor
MS Islam, ML Ali, R Zaman, ZM Tanvir
International Conference on Industrial Engineering and Operations Management …, 2014
2014
Carrier Transport Phenomena in Cylindrical Channel III-V Gate-All-Around Nanowire Transistor
SUZ Khan, MS Hossain, FU Rahman, MO Hossen, R Zaman, ...
International Semiconductor Device Research Symposium (ISDRS), Maryland, USA, 2013
2013
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