| Novel Fingertip Image-Based Heart Rate Detection Methods for a Smartphone R Zaman, CH Cho, K Hartmann-Vaccarezza, TN Phan, G Yoon, ... Sensors, 2017 | 25 | 2017 |
| Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor SUZ Khan, M Hossain, FU Rahman, R Zaman, M Hossen, QDM Khosru International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015 | 17 | 2015 |
| A novel diversity method for smartphone camera-based heart rhythm signals in the presence of motion and noise artifacts F Tabei, R Zaman, KH Foysal, R Kumar, Y Kim, JW Chong PLOS ONE, 2019 | 15 | 2019 |
| Analytical modeling of gate capacitance and drain current of gate-all-around InxGa1−xAs nanowire MOSFET SUZ Khan, MS Hossain, MO Hossen, FU Rahman, R Zaman, ... 2014 2nd International Conference on Electronic Design (ICED), 89-93, 2014 | 10 | 2014 |
| Motion and Noise Artifact-Resilient Atrial Fibrillation Detection Using a Smartphone R Zaman, JW Chong, CH Cho, N Esa, DD McManus, KH Chon 2016 IEEE International Conference on Connected Health: Applications …, 2016 | 6 | 2016 |
| Capacitance-Voltage Characteristics of Gate-All-Around InxGa1-XAs Nanowire Transistor QDM Khosru, SUZ Khan, MS Hossain, FU Rahman, MO Hossen, ... ECS Transactions 53 (1), 169-176, 2013 | 6 | 2013 |
| Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET SUZ Khan, MS Hossain, FU Rahman, R Zaman, MO Hossen, ... 8th International Conference on Electrical and Computer Engineering, 100-103, 2014 | 4 | 2014 |
| A Novel Heart Rate Monitoring Method using a Smartphone R Zaman, CH Cho, Y Kim, JW Chong Healthcare Innovation Point-Of-Care Technologies Conference (HI-POCT), 2016 …, 2016 | 3 | 2016 |
| Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs FU Rahman, MS Hossain, SUZ Khan, R Zaman, MO Hossen, ... 2012 7th International Conference on Electrical and Computer Engineering …, 2012 | 3 | 2012 |
| Self-consistent determination of threshold voltage of In-rich Gate-All-Around InxGa1−xAs nanowire transistor incorporating quantum mechanical effect R Zaman, SUZ Khan, MS Hossain, FU Rahman, MO Hossen, ... 2012 7th International Conference on Electrical and Computer Engineering …, 2012 | 3 | 2012 |
| Ballistic performance limit and gate leakage modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al2O3as Gate Dielectric MO Hossen, MS Hossain, SUZ Khan, FU Rahman, R Zaman, ... 2012 IEEE International Conference on Electron Devices and Solid State …, 2012 | 2 | 2012 |
| Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor SUZ Khan, M Hossain, M Hossen, FU Rahman, R Zaman, QDM Khosru arXiv preprint arXiv:1406.5257, 2014 | 1 | 2014 |
| Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification MS Hossain, SUZ Khan, MO Hossen, FU Rahman, R Zaman, ... 2012 IEEE International Conference on Electron Devices and Solid State …, 2012 | 1 | 2012 |
| Low-Cost USB-Based Data-Logger for LVDT Sensor MS Islam, ML Ali, R Zaman, ZM Tanvir International Conference on Industrial Engineering and Operations Management …, 2014 | | 2014 |
| Carrier Transport Phenomena in Cylindrical Channel III-V Gate-All-Around Nanowire Transistor SUZ Khan, MS Hossain, FU Rahman, MO Hossen, R Zaman, ... International Semiconductor Device Research Symposium (ISDRS), Maryland, USA, 2013 | | 2013 |
