| Barrier layer for FinFET channels RK Oxland, M Van Dal, MC Holland, G Vellianitis, M Passlack US Patent 9,214,555, 2015 | 614 | 2015 |
| Strained channel field effect transistor M Van Dal, G Doornbos, G Vellianitis, TL Lee, F Yuan US Patent 9,761,666, 2017 | 217 | 2017 |
| The Kirkendall effect in multiphase diffusion A Paul, MJH Van Dal, AA Kodentsov, FJJ Van Loo Acta Materialia 52 (3), 623-630, 2004 | 213 | 2004 |
| Ni-and Co-based silicides for advanced CMOS applications JA Kittl, A Lauwers, O Chamirian, M Van Dal, A Akheyar, M De Potter, ... Microelectronic Engineering 70 (2-4), 158-165, 2003 | 148 | 2003 |
| Multi-gate devices for the 32 nm technology node and beyond N Collaert, A De Keersgieter, A Dixit, I Ferain, LS Lai, D Lenoble, ... Solid-State Electronics 52 (9), 1291-1296, 2008 | 131 | 2008 |
| Intrinsic diffusion and Kirkendall effect in Ni–Pd and Fe–Pd solid solutions MJH Van Dal, M Pleumeekers, AA Kodentsov, FJJ Van Loo Acta Materialia 48 (2), 385-396, 2000 | 131 | 2000 |
| Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors R Duffy, MJH Van Dal, BJ Pawlak, M Kaiser, RGR Weemaes, B Degroote, ... Applied Physics Letters 90 (24), 2007 | 119 | 2007 |
| Systematic TLM measurements of NiSi and PtSi specific contact resistance to n-and p-type Si in a broad doping range N Stavitski, MJH Van Dal, A Lauwers, C Vrancken, AY Kovalgin, ... IEEE electron device letters 29 (4), 378-381, 2008 | 106 | 2008 |
| Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography MJH Van Dal, N Collaert, G Doornbos, G Vellianitis, G Curatola, ... 2007 IEEE symposium on VLSI technology, 110-111, 2007 | 105 | 2007 |
| Vertical gate-all-around field effect transistors and methods of forming same MC Holland, B Duriez, M Van Dal US Patent 9,520,466, 2016 | 95 | 2016 |
| Work function of Ni silicide phases on HfSiON and SiO/sub 2: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates JA Kittl, MA Pawlak, A Lauwers, C Demeurisse, K Opsomer, KG Anil, ... IEEE electron device letters 27 (1), 34-36, 2005 | 86 | 2005 |
| Demonstration of scaled Ge p-channel FinFETs integrated on Si MJH Van Dal, G Vellianitis, G Doornbos, B Duriez, TM Shen, CC Wu, ... 2012 International Electron Devices Meeting, 23.5. 1-23.5. 4, 2012 | 85 | 2012 |
| Ni based silicides for 45 nm CMOS and beyond A Lauwers, JA Kittl, MJH Van Dal, O Chamirian, MA Pawlak, M de Potter, ... Materials Science and Engineering: B 114, 29-41, 2004 | 84 | 2004 |
| Microstructural stability of the Kirkendall plane in solid-state diffusion MJH Van Dal, AM Gusak, C Cserháti, AA Kodentsov, FJJ Van Loo Physical review letters 86 (15), 3352, 2001 | 81 | 2001 |
| Intrinsic diffusion in Ni3Al system C Cserhati, A Paul, AA Kodentsov, MJH Van Dal, FJJ Van Loo Intermetallics 11 (4), 291-297, 2003 | 79 | 2003 |
| Germanium p-channel FinFET fabricated by aspect ratio trapping MJH Van Dal, G Vellianitis, B Duriez, G Doornbos, CH Hsieh, BH Lee, ... IEEE Transactions on Electron Devices 61 (2), 430-436, 2014 | 77 | 2014 |
| Silicides and germanides for nano-CMOS applications JA Kittl, K Opsomer, C Torregiani, C Demeurisse, S Mertens, DP Brunco, ... Materials Science and Engineering: B 154, 144-154, 2008 | 74 | 2008 |
| Method for manufacturing semiconductor device and semiconductor device G Curatola, P Agarwal, MJH Van Dal, V Madakasira US Patent App. 12/918,398, 2011 | 69 | 2011 |
| Fin field effect transistor layout for stress optimization G Doornbos, M Van Dal US Patent 8,766,364, 2014 | 65 | 2014 |
| An ultralow-resistance ultrashallow metallic source/drain contact scheme for III–V NMOS R Oxland, SW Chang, X Li, SW Wang, G Radhakrishnan, W Priyantha, ... IEEE electron device letters 33 (4), 501-503, 2012 | 60 | 2012 |
