David Wilt
David Wilt
Air Force
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Cited by
Cited by
Effect of strain compensation on quantum dot enhanced GaAs solar cells
SM Hubbard, CD Cress, CG Bailey, RP Raffaelle, SG Bailey, DM Wilt
Applied Physics Letters 92 (12), 123512, 2008
Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers
SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ...
Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002
Impact of dislocation densities on and junction GaAs diodes and solar cells on SiGe virtual substrates
CL Andre, DM Wilt, AJ Pitera, ML Lee, EA Fitzgerald, SA Ringel
Journal of applied physics 98 (1), 014502, 2005
Detecting electrical activity from Martian dust storms
WM Farrell, ML Kaiser, MD Desch, JG Houser, SA Cummer, DM Wilt, ...
Journal of Geophysical Research: Planets 104 (E2), 3795-3801, 1999
Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates
CL Andre, JA Carlin, JJ Boeckl, DM Wilt, MA Smith, AJ Pitera, ML Lee, ...
IEEE Transactions on Electron Devices 52 (6), 1055-1060, 2005
Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates
CL Andre, JJ Boeckl, DM Wilt, AJ Pitera, ML Lee, EA Fitzgerald, BM Keyes, ...
Applied physics letters 84 (18), 3447-3449, 2004
Monolithic interconnected modules (MIMs) for thermophotovoltaic energy conversion
D Wilt, R Wehrer, M Palmisiano, M Wanlass, C Murray
Semiconductor Science and Technology 18 (5), S209, 2003
Evidence for Martian electrostatic charging and abrasive wheel wear from the Wheel Abrasion Experiment on the Pathfinder Sojourner rover
DC Ferguson, JC Kolecki, MW Siebert, DM Wilt, JR Matijevic
Journal of Geophysical Research: Planets 104 (E4), 8747-8759, 1999
InGaP alpha voltaic batteries: Synthesis, modeling, and radiation tolerance
CD Cress, BJ Landi, RP Raffaelle, DM Wilt
Journal of applied physics 100 (11), 114519, 2006
Quantum dot solar cell tolerance to alpha-particle irradiation
CD Cress, SM Hubbard, BJ Landi, RP Raffaelle, DM Wilt
Applied Physics Letters 91 (18), 183108, 2007
Correlation of electron radiation induced-damage in GaAs solar cells
JH Warner, SR Messenger, RJ Walters, GP Summers, JR Lorentzen, ...
IEEE Transactions on nuclear science 53 (4), 1988-1994, 2006
MOCVD growth of lattice-matched and mismatched InGaAs materials for thermophotovoltaic energy conversion
SL Murray, FD Newman, CS Murray, DM Wilt, MW Wanlass, P Ahrenkiel, ...
Semiconductor science and technology 18 (5), S202, 2003
High efficiency indium gallium arsenide photovoltaic devices for thermophotovoltaic power systems
DM Wilt, NS Fatemi, RW Hoffman Jr, PP Jenkins, DJ Brinker, D Scheiman, ...
Applied physics letters 64 (18), 2415-2417, 1994
Multi-junction solar cell spectral tuning with quantum dots
RP Raffaelle, S Sinharoy, J Andersen, DM Wilt, SG Bailey
2006 IEEE 4th World Conference on Photovoltaic Energy Conference 1, 162-166, 2006
High-quality step-graded buffer by molecular-beam epitaxy
MK Hudait, Y Lin, DM Wilt, JS Speck, CA Tivarus, ER Heller, JP Pelz, ...
Applied physics letters 82 (19), 3212-3214, 2003
Short circuit current enhancement of GaAs solar cells using strain compensated InAs quantum dots
SM Hubbard, CG Bailey, CD Cress, S Polly, J Clark, DV Forbes, ...
2008 33rd IEEE Photovoltaic Specialists Conference, 1-6, 2008
InGaAs PV device development for TPV power systems
DM Wilt, S Fatemi, RW Hoffman Jr, PP Jenkins, D Scheiman, R Lowe, ...
AIP Conference Proceedings 321 (1), 210-220, 1995
Thermophotovoltaics for space power applications
D Wilt, D Chubb, D Wolford, P Magari, C Crowley
AIP Conference Proceedings 890 (1), 335-345, 2007
Monolithically interconnected InGaAs TPV module development
DM Wilt, NS Fatemi, PP Jenkins, RW Hoffman, GA Landis, RK Jain
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists …, 1996
Electrical and optical performance characteristics of 0.74 eV InGaAs monolithic interconnected modules
DM Wilt, NS Fatemi, PP Jenkins, VG Weizer, RW Hoffman Jr, RK Jain, ...
AIP Conference Proceedings 401 (1), 237-247, 1997
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