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Yuhao Zhang
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The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
7242018
High-performance GaN vertical fin power transistors on bulk GaN substrates
M Sun, Y Zhang, X Gao, T Palacios
IEEE Electron Device Letters 38 (4), 509-512, 2017
2132017
High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
Lili Yu, Ahmad Zubair, Elton J. G. Santos, Xu Zhang, Yuxuan Lin, Yuhao Zhang ...
Nano Letters 15 (8), 4928–4934, 2015
1912015
Two-dimensional MoS 2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting
Xu Zhang, Jesús Grajal, Jose Luis Vazquez-Roy, Ujwal Radhakrishna, Xiaoxue ...
Nature, 2019
1862019
Gallium nitride vertical power devices on foreign substrates: a review and outlook
Y Zhang, A Dadgar, T Palacios
Journal of Physics D: Applied Physics 51 (27), 273001, 2018
1662018
GaN-on-Si Vertical Schottky and pn Diodes
Y Zhang, M Sun, D Piedra, M Azize, X Zhang, T Fujishima, T Palacios
IEEE Electron Device Letters 35 (6), 618 - 620, 2014
1542014
Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors
Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios
IEEE Transactions on Electron Devices 60 (7), 2224-2230, 2013
1402013
Design, Modeling and Fabrication of CVD Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
Lili Yu, Dina El-Damak, Ujwal Radhakrishna, Xi Ling, Ahmad Zubair, Yuxuan ...
Nano Letters 16 (10), 6349–6356, 2016
124*2016
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Yuhao Zhang, Zhihong Liu, Marko J Tadjer, Min Sun, Daniel Piedra ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
1232017
Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ...
Electron Devices, IEEE Transactions on 62 (7), 2155 - 2161, 2015
1202015
Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
Y Zhang, M Sun, SJ Joglekar, T Fujishima, T Palacios
Applied Physics Letters 103 (3), 033524, 2013
1062013
Materials and processing issues in vertical GaN power electronics
J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios
Materials Science in Semiconductor Processing 78, 75-84, 2018
1052018
Vertical Ga2O3 Schottky Barrier Diodes with Small-Angle Beveled Field Plates: a Baliga’s Figure-of-Merit of 0.6 GW/cm2
Noah Allen, Ming Xiao, Xiaodong Yan, Kohei Sasaki, Marko J. Tadjer, Jiahui ...
IEEE Electron Device Letters, 2019
992019
Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit
Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ...
IEEE Electron Device Letters 40 (1), 75-78, 2019
912019
Trench formation and corner rounding in vertical GaN power devices
Yuhao Zhang, Min Sun, Zhihong Liu, Daniel Piedra, Jie Hu, Xiang Gao, Tomás ...
Applied Physics Letters 110 (19), 193506, 2017
852017
1200 V GaN vertical fin power field-effect transistors
Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ...
Electron Devices Meeting (IEDM), 2017 IEEE International, 9.2. 1-9.2. 4, 2017
822017
High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes
Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios
IEEE Electron Device Lett. 38 (2), 248-251, 2017
702017
Design space and origin of off-state leakage in GaN vertical power diodes
Y Zhang, H-Y Wong, M Sun, S Joglekar, L Yu, NA Braga, RV Mickevicius, T Palacios
2015 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2015
662015
720-V/0.35-m cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers
Y Zhang, M Yuan, N Chowdhury, K Cheng, T Palacios
IEEE Electron Device Letters 39 (5), 715-718, 2018
632018
p-Channel GaN Transistor based on p-GaN/AlGaN/GaN on Si
N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ...
IEEE Electron Device Letters, 2019
612019
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