| InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz M Seo, M Urteaga, J Hacker, A Young, Z Griffith, V Jain, R Pierson, ... Solid-State Circuits, IEEE Journal of 46 (10), 2203-2214, 2011 | 201 | 2011 |
| 130nm InP DHBTs with ft >0.52THz and fmax>1.1THz M Urteaga, R Pierson, P Rowell, V Jain, E Lobisser, MJW Rodwell 69th Device Research Conference, 281-282, 2011 | 185 | 2011 |
| A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications JJ Pekarik, J Adkisson, P Gray, Q Liu, R Camillo-Castillo, M Khater, V Jain, ... 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 92-95, 2014 | 115 | 2014 |
| Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 75 | 2009 |
| Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth JC Rode, HW Chiang, P Choudhary, V Jain, BJ Thibeault, WJ Mitchell, ... IEEE Transactions on Electron Devices 62 (9), 2779-2785, 2015 | 67 | 2015 |
| > 300GHz fixed-frequency and voltage-controlled fundamental oscillators in an InP DHBT process M Seo, M Urteaga, A Young, V Jain, Z Griffith, J Hacker, P Rowell, ... 2010 IEEE MTT-S International Microwave Symposium, 272-275, 2010 | 63 | 2010 |
| InP HBTs for THz frequency integrated circuits M Urteaga, M Seo, J Hacker, Z Griffith, A Young, R Pierson, P Rowell, ... IPRM 2011-23rd International Conference on Indium Phosphide and Related …, 2011 | 54 | 2011 |
| Ex situ Ohmic contacts to n-InGaAs A Baraskar, MA Wistey, V Jain, E Lobisser, U Singisetti, G Burek, YJ Lee, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2010 | 41 | 2010 |
| 1.0 THz fmaxInP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance V Jain, JC Rode, HW Chiang, A Baraskar, E Lobisser, BJ Thibeault, ... 69th Device Research Conference, 271-272, 2011 | 35 | 2011 |
| 200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax≫ 800 GHz and ƒτ= 360 GHz E Lobisser, Z Griffith, V Jain, BJ Thibeault, MJW Rodwell, D Loubychev, ... 2009 IEEE International Conference on Indium Phosphide & Related Materials …, 2009 | 35 | 2009 |
| Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-Ends J Hoffman, JR Martin-Gosse, S Shopov, JJ Pekarik, R Camillo-Castillo, ... IEEE Journal of Solid-State Circuits 51 (9), 1985-1993, 2016 | 33 | 2016 |
| Photovoltaic effect in single-layer organic solar cell devices fabricated with two new imidazolin-5-one molecules V Jain, BK Rajbongshi, AT Mallajosyula, G Bhattacharjya, SSK Iyer, ... Solar Energy Materials and Solar Cells 92 (9), 1043-1046, 2008 | 33 | 2008 |
| A comparison between bipolar transistor and nanowire field effect transistor biosensors S Zafar, M Khater, V Jain, T Ning Applied Physics Letters 106 (6), 2015 | 29 | 2015 |
| InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $ f_ {tau}/f_ {max} sim hbox {430/800} hbox {GHz} $ V Jain, E Lobisser, A Baraskar, BJ Thibeault, MJW Rodwell, Z Griffith, ... Electron Device Letters, IEEE 32 (1), 24-26, 2011 | 29 | 2011 |
| Total dose and transient response of SiGe HBTs from a new 4th-generation, 90 nm SiGe BiCMOS technology NE Lourenco, RL Schmid, KA Moen, SD Phillips, TD England, ... 2012 IEEE Radiation Effects Data Workshop, 1-5, 2012 | 28 | 2012 |
| A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with fT/fMAX of 260/320 GHz P Candra, V Jain, P Cheng, J Pekarik, R Camillo-Castillo, P Gray, ... 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 381-384, 2013 | 25 | 2013 |
| High doping effects on in-situ Ohmic contacts to n-InAs A Baraskar, V Jain, MA Wistey, U Singisetti, YJ Lee, B Thibeault, ... 2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010 | 22 | 2010 |
| Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS A Joseph, V Jain, SN Ong, R Wolf, SF Lim, J Singh 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 21 | 2018 |
| SiGe HBTs in 90nm BiCMOS technology demonstrating fT/fMAX 285GHz/475GHz through simultaneous reduction of base resistance and extrinsic collector capacitance QZ Liu, JW Adkisson, V Jain, RA Camillo-Castillo, MH Khater, PB Gray, ... ECS transactions 64 (6), 285, 2014 | 20 | 2014 |
| An InGaAs/InP DHBT with Simultaneous fτ/fmax 404/901 GHz and 4.3 V Breakdown Voltage JC Rode, H Chiang, P Choudhary, V Jain, BJ Thibeault, WJ Mitchell, ... IEEE, 0 | 20 | |
