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Matthew C. Robbins
Matthew C. Robbins
Verified email at umn.edu
Title
Cited by
Cited by
Year
Black Phosphorus p-MOSFETs With 7-nm HfO2Gate Dielectric and Low Contact Resistance
N Haratipour, MC Robbins, SJ Koester
IEEE Electron Device Letters 36 (4), 411-413, 2015
902015
Atomic and electronic structure of exfoliated black phosphorus
RJ Wu, M Topsakal, T Low, MC Robbins, N Haratipour, JS Jeong, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (6…, 2015
862015
Symmetric complementary logic inverter using integrated black phosphorus and MoS2 transistors
Y Su, CU Kshirsagar, MC Robbins, N Haratipour, SJ Koester
2D Materials 3 (1), 011006, 2016
592016
Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents
CU Kshirsagar, W Xu, Y Su, MC Robbins, CH Kim, SJ Koester
Acs Nano 10 (9), 8457-8464, 2016
482016
Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material
J Yue, A Prakash, MC Robbins, SJ Koester, B Jalan
ACS applied materials & interfaces 10 (25), 21061-21065, 2018
412018
Black phosphorus p-and n-MOSFETs with electrostatically doped contacts
MC Robbins, SJ Koester
IEEE Electron Device Letters 38 (2), 285-288, 2016
382016
Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene
Y Anugrah, MC Robbins, PA Crowell, SJ Koester
Applied Physics Letters 106 (10), 103108, 2015
262015
Cyclical thinning of black phosphorus with high spatial resolution for heterostructure devices
MC Robbins, S Namgung, SH Oh, SJ Koester
ACS applied materials & interfaces 9 (14), 12654-12662, 2017
192017
Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit
MC Robbins, SJ Koester
2017 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2017
132017
Right-angle black phosphorus tunneling field effect transistor
MC Robbins, P Golani, SJ Koester
IEEE Electron Device Letters 40 (12), 1988-1991, 2019
92019
Black phosphorus n-MOSFETs with record transconductance
N Haratipour, MC Robbins, SJ Koester
2015 73rd Annual Device Research Conference (DRC), 243-244, 2015
52015
On-product projection for digital merchandizing
RW Biernath, MC Robbins, EY Barazesh, DA Harper
US Patent 8,919,969, 2014
42014
Band-to-band tunneling limited ambipolar current in black phosphorus MOSFETs
MC Robbins, N Haratipour, SJ Koester
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
22017
Integrated MoS2 n-MOSFETs and black phosphorus p-MOSFETs with HfO2 dielectrics and local backgate electrodes
Y Su, N Haratipour, MC Robbins, C Kshirsagar, SJ Koester
2015 73rd Annual Device Research Conference (DRC), 155-156, 2015
22015
OPTICALLY RESONANT DEVICE FOR ENTANGLED PHOTON GENERATION
C Fertig, MW Puckett, M Robbins, NA Krueger
US Patent App. 17/374,745, 2023
2023
Magnetometer device based on electrical pumping in nitrogen-vacancy centers in diamond
NE Solmeyer, S Tin, M Robbins, E Freeman
US Patent 11,156,675, 2021
2021
Integrated photonics for atomic sensing
M Puckett, M Robbins, R Compton, N Solmeyer, C Hoyt, C Fertig, ...
Optical and Quantum Sensing and Precision Metrology 11700, 218-224, 2021
2021
Engineering Novel Transistors Based on Black Phosphorus
MC Robbins
University of Minnesota, 2019
2019
Anisotropic material properties of thin layered -Ga2O3
S Koirala, S Namgung, M Atalla, MC Robbins, R Ma, SJ Koester
Materials Research Society, 2018
2018
MONDAY PM, JUNE 26, 2017
YC Tsai, CY Chen, MS Ho, Y Li, MC Robbins, N Haratipour, SJ Koester, ...
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