| Black Phosphorus p-MOSFETs With 7-nm HfO2Gate Dielectric and Low Contact Resistance N Haratipour, MC Robbins, SJ Koester IEEE Electron Device Letters 36 (4), 411-413, 2015 | 90 | 2015 |
| Atomic and electronic structure of exfoliated black phosphorus RJ Wu, M Topsakal, T Low, MC Robbins, N Haratipour, JS Jeong, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (6 …, 2015 | 86 | 2015 |
| Symmetric complementary logic inverter using integrated black phosphorus and MoS2 transistors Y Su, CU Kshirsagar, MC Robbins, N Haratipour, SJ Koester 2D Materials 3 (1), 011006, 2016 | 59 | 2016 |
| Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents CU Kshirsagar, W Xu, Y Su, MC Robbins, CH Kim, SJ Koester Acs Nano 10 (9), 8457-8464, 2016 | 48 | 2016 |
| Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material J Yue, A Prakash, MC Robbins, SJ Koester, B Jalan ACS applied materials & interfaces 10 (25), 21061-21065, 2018 | 41 | 2018 |
| Black phosphorus p-and n-MOSFETs with electrostatically doped contacts MC Robbins, SJ Koester IEEE Electron Device Letters 38 (2), 285-288, 2016 | 38 | 2016 |
| Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene Y Anugrah, MC Robbins, PA Crowell, SJ Koester Applied Physics Letters 106 (10), 103108, 2015 | 26 | 2015 |
| Cyclical thinning of black phosphorus with high spatial resolution for heterostructure devices MC Robbins, S Namgung, SH Oh, SJ Koester ACS applied materials & interfaces 9 (14), 12654-12662, 2017 | 19 | 2017 |
| Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit MC Robbins, SJ Koester 2017 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2017 | 13 | 2017 |
| Right-angle black phosphorus tunneling field effect transistor MC Robbins, P Golani, SJ Koester IEEE Electron Device Letters 40 (12), 1988-1991, 2019 | 9 | 2019 |
| Black phosphorus n-MOSFETs with record transconductance N Haratipour, MC Robbins, SJ Koester 2015 73rd Annual Device Research Conference (DRC), 243-244, 2015 | 5 | 2015 |
| On-product projection for digital merchandizing RW Biernath, MC Robbins, EY Barazesh, DA Harper US Patent 8,919,969, 2014 | 4 | 2014 |
| Band-to-band tunneling limited ambipolar current in black phosphorus MOSFETs MC Robbins, N Haratipour, SJ Koester 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 2 | 2017 |
| Integrated MoS2 n-MOSFETs and black phosphorus p-MOSFETs with HfO2 dielectrics and local backgate electrodes Y Su, N Haratipour, MC Robbins, C Kshirsagar, SJ Koester 2015 73rd Annual Device Research Conference (DRC), 155-156, 2015 | 2 | 2015 |
| OPTICALLY RESONANT DEVICE FOR ENTANGLED PHOTON GENERATION C Fertig, MW Puckett, M Robbins, NA Krueger US Patent App. 17/374,745, 2023 | | 2023 |
| Magnetometer device based on electrical pumping in nitrogen-vacancy centers in diamond NE Solmeyer, S Tin, M Robbins, E Freeman US Patent 11,156,675, 2021 | | 2021 |
| Integrated photonics for atomic sensing M Puckett, M Robbins, R Compton, N Solmeyer, C Hoyt, C Fertig, ... Optical and Quantum Sensing and Precision Metrology 11700, 218-224, 2021 | | 2021 |
| Engineering Novel Transistors Based on Black Phosphorus MC Robbins University of Minnesota, 2019 | | 2019 |
| Anisotropic material properties of thin layered ß-Ga2O3 S Koirala, S Namgung, M Atalla, MC Robbins, R Ma, SJ Koester Materials Research Society, 2018 | | 2018 |
| MONDAY PM, JUNE 26, 2017 YC Tsai, CY Chen, MS Ho, Y Li, MC Robbins, N Haratipour, SJ Koester, ... | | |
Steven J. KoesterProfessor of Electrical & Computer Engineering, University of MinnesotaVerified email at umn.edu
