Yasuto Hijikata
Title
Cited by
Cited by
Year
Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films
Y Hijikata, H Yaguchi, M Yoshikawa, S Yoshida
Applied Surface Science 184 (1-4), 161-166, 2001
1222001
A kinetic model of silicon carbide oxidation based on the interfacial silicon and carbon emission phenomenon
Y Hijikata, H Yaguchi, S Yoshida
Applied Physics Express 2 (2), 021203, 2009
1132009
Physics and technology of silicon carbide devices
Y Hijikata
BoD–Books on Demand, 2012
752012
Oxide growth rate enhancement of silicon carbide (0001) Si-faces in thin oxide regime
T Yamamoto, Y Hijikata, H Yaguchi, S Yoshida
Japanese Journal of Applied Physics 47 (10R), 7803, 2008
542008
Three-dimensional proton beam writing of optically active coherent vacancy spins in silicon carbide
H Kraus, D Simin, C Kasper, Y Suda, S Kawabata, W Kada, T Honda, ...
Nano letters 17 (5), 2865-2870, 2017
492017
Growth rate enhancement of (0001)-face silicon–carbide oxidation in thin oxide regime
T Yamamoto, Y Hijikata, H Yaguchi, S Yoshida
Japanese Journal of Applied Physics 46 (8L), L770, 2007
402007
Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry
D Goto, Y Hijikata, S Yagi, H Yaguchi
Journal of Applied Physics 117 (9), 095306, 2015
372015
Pressure Sensitivity of a Fiber-Optic Microprobe for High-Frequency Ultrasonic Field
KN Y Uno
Japanese Journal of Applied Physics 38 (5B), 3120-3123, 1999
351999
Photoluminescence study on temperature dependence of band gap energy of GaAsN alloys
H Yaguchi, S Kikuchi, Y Hijikata, S Yoshida, D Aoki, K Onabe
physica status solidi (b) 228 (1), 273-277, 2001
332001
Unified theory of silicon carbide oxidation based on the Si and C emission model
D Goto, Y Hijikata
Journal of Physics D: Applied Physics 49 (22), 225103, 2016
312016
Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
K Kouda, Y Hijikata, S Yagi, H Yaguchi, S Yoshida
Journal of Applied Physics 112 (2), 024502, 2012
302012
MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen
A Poggi, F Moscatelli, Y Hijikata, S Solmi, R Nipoti
Microelectronic engineering 84 (12), 2804-2809, 2007
292007
Characterization of carrier concentration and mobility in n-type SiC wafers using infrared reflectance spectroscopy
K Narita, Y Hijikata, H Yaguchi, S Yoshida, S Nakashima
Japanese journal of applied physics 43 (8R), 5151, 2004
282004
RF‐MBE growth of cubic InN films on MgO (001) substrates
Y Iwahashi, H Yaguchi, A Nishimoto, M Orihara, Y Hijikata, S Yoshida
physica status solidi c 3 (6), 1515-1518, 2006
262006
Effect of Ar post-oxidation annealing on oxide–4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy
Y Hijikata, H Yaguchi, S Yoshida, Y Ishida, M Yoshikawa
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23 (2…, 2005
252005
Real time observation of SiC oxidation using an in situ ellipsometer
K Kakubari, R Kuboki, Y Hijikata, H Yaguchi, S Yoshida
Materials science forum 527, 1031-1034, 2006
242006
Characterization of oxide films on epitaxial faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation
Y Hijikata, H Yaguchi, S Yoshida, Y Takata, K Kobayashi, H Nohira, ...
Journal of applied physics 100 (5), 053710, 2006
232006
Measurements of the depth profile of the refractive indices in oxide films on SiC by spectroscopic ellipsometry
T Iida, Y Tomioka, K Yoshimoto, M Midorikawa, H Tukada, M Orihara, ...
Japanese journal of applied physics 41 (2R), 800, 2002
222002
Optical and electrical characterizations of 4H-SiC–oxide interfaces by spectroscopic ellipsometry and capacitance–voltage measurements
H Hashimoto, Y Hijikata, H Yaguchi, S Yoshida
Applied surface science 255 (20), 8648-8653, 2009
212009
Twin photoluminescence peaks from single isoelectronic traps in nitrogen δ-doped GaAs
Y Endo, Y Hijikata, H Yaguchi, S Yoshida, M Yoshita, H Akiyama, ...
Physica E: Low-dimensional Systems and Nanostructures 40 (6), 2110-2112, 2008
212008
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Articles 1–20