Hugh Barnaby
Hugh Barnaby
Arizona State Univerisity
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Total-ionizing-dose effects in modern CMOS technologies
HJ Barnaby
IEEE Transactions on Nuclear Science 53 (6), 3103-3121, 2006
5972006
Analysis of single-event transients in analog circuits
P Adell, RD Schrimpf, HJ Barnaby, R Marec, C Chatry, P Calvel, C Barillot, ...
IEEE Transactions on nuclear Science 47 (6), 2616-2623, 2000
1612000
The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors
X Hu, BK Choi, HJ Barnaby, DM Fleetwood, RD Schrimpf, S Lee, ...
IEEE Transactions on Nuclear Science 51 (2), 293-297, 2004
1222004
Modeling ionizing radiation effects in solid state materials and CMOS devices
HJ Barnaby, ML McLain, IS Esqueda, XJ Chen
IEEE Transactions on Circuits and Systems I: Regular Papers 56 (8), 1870-1883, 2009
1032009
Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies
IS Esqueda, HJ Barnaby, ML Alles
IEEE transactions on nuclear science 52 (6), 2259-2264, 2005
1012005
Total ionizing dose effects in shallow trench isolation oxides
F Faccio, HJ Barnaby, XJ Chen, DM Fleetwood, L Gonella, M McLain, ...
Microelectronics Reliability 48 (7), 1000-1007, 2008
972008
Enhanced TID susceptibility in sub-100 nm bulk CMOS I/O transistors and circuits
M McLain, HJ Barnaby, KE Holbert, RD Schrimpf, H Shah, A Amort, ...
IEEE Transactions on Nuclear Science 54 (6), 2210-2217, 2007
952007
Compact modeling of total ionizing dose and aging effects in MOS technologies
IS Esqueda, HJ Barnaby, MP King
IEEE Transactions on Nuclear Science 62 (4), 1501-1515, 2015
902015
Analytical model for proton radiation effects in bipolar devices
HJ Barnaby, SK Smith, RD Schrimpf, DM Fleetwood, RL Pease
IEEE Transactions on Nuclear Science 49 (6), 2643-2649, 2002
892002
Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides
XJ Chen, HJ Barnaby, B Vermeire, K Holbert, D Wright, RL Pease, ...
IEEE Transactions on Nuclear Science 54 (6), 1913-1919, 2007
882007
Conductive bridging random access memory—materials, devices and applications
MN Kozicki, HJ Barnaby
Semiconductor Science and Technology 31 (11), 113001, 2016
802016
Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures
RL Pease, DG Platteter, GW Dunham, JE Seiler, HJ Barnaby, ...
IEEE transactions on nuclear science 51 (6), 3773-3780, 2004
802004
Reconfigurable memristive device technologies
AH Edwards, HJ Barnaby, KA Campbell, MN Kozicki, W Liu, MJ Marinella
Proceedings of the IEEE 103 (7), 1004-1033, 2015
772015
Proton radiation response mechanisms in bipolar analog circuits
HJ Barnaby, RD Schrimpf, AL Sternberg, V Berthe, CR Cirba, RL Pease
IEEE Transactions on Nuclear Science 48 (6), 2074-2080, 2001
732001
The effects of hydrogen on the enhanced low dose rate sensitivity (ELDRS) of bipolar linear circuits
RL Pease, PC Adell, BG Rax, XJ Chen, HJ Barnaby, KE Holbert, ...
IEEE Transactions on Nuclear Science 55 (6), 3169-3173, 2008
722008
Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices
PC Adell, HJ Barnaby, RD Schrimpf, B Vermeire
IEEE Transactions on Nuclear Science 54 (6), 2174-2180, 2007
662007
Investigation of single-event transients in voltage-controlled oscillators
W Chen, V Pouget, HJ Barnaby, JD Cressler, G Niu, P Fouillat, Y Deval, ...
IEEE transactions on nuclear science 50 (6), 2081-2087, 2003
642003
Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells
W Chen, HJ Barnaby, MN Kozicki
IEEE Electron Device Letters 37 (5), 580-583, 2016
632016
Total-ionizing-dose effects on isolation oxides in modern CMOS technologies
HJ Barnaby, M Mclain, IS Esqueda
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007
632007
Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory
R Fang, Y Gonzalez Velo, W Chen, KE Holbert, MN Kozicki, H Barnaby, ...
Applied Physics Letters 104 (18), 183507, 2014
602014
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Artikelen 1–20