| Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate SE Panasci, E Schilirò, G Greco, M Cannas, FM Gelardi, S Agnello, ... ACS Applied Materials & Interfaces 13 (26), 31248-31259, 2021 | 57 | 2021 |
| Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation SE Panasci, E Schilirò, F Migliore, M Cannas, FM Gelardi, F Roccaforte, ... Applied Physics Letters 119 (9), 2021 | 31 | 2021 |
| Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene E Schilirò, RL Nigro, SE Panasci, FM Gelardi, S Agnello, R Yakimova, ... Carbon 169, 172-181, 2020 | 25 | 2020 |
| Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization SE Panasci, A Koos, E Schilirò, S Di Franco, G Greco, P Fiorenza, ... Nanomaterials 12 (2), 182, 2022 | 18 | 2022 |
| Gold nanoparticle assisted synthesis of MoS 2 monolayers by chemical vapor deposition L Seravalli, M Bosi, P Fiorenza, SE Panasci, D Orsi, E Rotunno, ... Nanoscale Advances 3 (16), 4826-4833, 2021 | 18 | 2021 |
| Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions F Giannazzo, SE Panasci, E Schilirò, F Roccaforte, A Koos, M Nemeth, ... Advanced Materials Interfaces 9 (22), 2200915, 2022 | 16 | 2022 |
| Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate E Schilirò, RL Nigro, SE Panasci, S Agnello, M Cannas, FM Gelardi, ... Advanced Materials Interfaces 8 (21), 2101117, 2021 | 14 | 2021 |
| Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC F Giannazzo, SE Panasci, E Schilirò, P Fiorenza, G Greco, F Roccaforte, ... Advanced Materials Interfaces 10 (1), 2201502, 2023 | 13 | 2023 |
| Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN F Giannazzo, SE Panasci, E Schilirò, G Greco, F Roccaforte, G Sfuncia, ... Applied Surface Science 631, 157513, 2023 | 12 | 2023 |
| Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 E Schilirò, SE Panasci, AM Mio, G Nicotra, S Agnello, B Pecz, ... Applied Surface Science 630, 157476, 2023 | 10 | 2023 |
| Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition F Giannazzo, R Dagher, E Schilirò, SE Panasci, G Greco, G Nicotra, ... Nanotechnology 32 (1), 015705, 2020 | 8 | 2020 |
| Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) M Vivona, F Giannazzo, G Bellocchi, SE Panasci, S Agnello, P Badalà, ... ACS Applied Electronic Materials 4 (9), 4514-4520, 2022 | 3 | 2022 |
| Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition F Esposito, M Bosi, G Attolini, F Rossi, SE Panasci, P Fiorenza, ... Applied Surface Science 639, 158230, 2023 | 2 | 2023 |
| Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition M Španková, Š Chromik, E Dobročka, L Pribusová Slušná, M Talacko, ... Nanomaterials 13 (21), 2837, 2023 | 2 | 2023 |
| Interface Structure and Doping of Chemical Vapor Deposition‐Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations SE Panasci, I Deretzis, E Schilirò, A La Magna, F Roccaforte, A Koos, ... physica status solidi (RRL)–Rapid Research Letters 17 (10), 2300218, 2023 | 2 | 2023 |
| Interface Properties of MoS2 van der Waals Heterojunctions with GaN SE Panasci, I Deretzis, E Schilirò, A La Magna, F Roccaforte, A Koos, ... Nanomaterials 14 (2), 133, 2024 | 1 | 2024 |
| Exploring UV-Laser Effects on Al-Implanted 4H-SiC M Vivona, F Giannazzo, G Bellocchi, S Panasci, S Agnello, P Badalà, ... Solid State Phenomena 342, 85-89, 2023 | 1 | 2023 |
| Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films SE Panasci, E Schilirò, A Koos, M Nemeth, M Cannas, S Agnello, ... Microelectronic Engineering 274, 111967, 2023 | 1 | 2023 |
| Electron Irradiation Effects on Single‐Layer MoS2 Obtained by Gold‐Assisted Exfoliation SE Panasci, A Alessi, G Buscarino, M Cannas, FM Gelardi, E Schilirò, ... physica status solidi (a) 219 (21), 2200096, 2022 | 1 | 2022 |
| Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices F Giannazzo, SE Panasci, E Schilirò, A Koos, B Pécz Materials Science in Semiconductor Processing 174, 108220, 2024 | | 2024 |
Filippo GiannazzoCNR, Istituto per la Microelettronica e i Microsistemi, Catania, ItalyVerified email at imm.cnr.it
