Sean Rommel
Sean Rommel
Verified email at rit.edu - Homepage
Title
Cited by
Cited by
Year
Room temperature operation of epitaxially grown resonant interband tunneling diodes
SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73 (15), 2191-2193, 1998
1911998
Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope
JH Jang, W Zhao, JW Bae, D Selvanathan, SL Rommel, I Adesida, ...
Applied physics letters 83 (20), 4116-4118, 2003
912003
Effect of on the etch profile of InP/InGaAsP alloys in inductively coupled plasma reactive ion etching chemistries for photonic device fabrication
SL Rommel, JH Jang, W Lu, G Cueva, L Zhou, I Adesida, G Pajer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
812002
Si-based resonant interband tunneling diodes and method of making interband tunneling diodes
PR Berger, PE Thompson, R Lake, K Hobart, SL Rommel
US Patent 6,803,598, 2004
712004
Si-based resonant interband tunneling diodes and method of making interband tunneling diodes
PR Berger, PE Thompson, R Lake, K Hobart, SL Rommel
US Patent 6,803,598, 2004
712004
Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts
C Rivas, R Lake, G Klimeck, WR Frensley, MV Fischetti, PE Thompson, ...
Applied Physics Letters 78 (6), 814-816, 2001
632001
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ...
IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000
602000
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ...
IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000
602000
Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR
N Jin, SY Chung, RM Heyns, PR Berger, R Yu, PE Thompson, ...
IEEE Electron Device Letters 25 (9), 646-648, 2004
592004
Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation
S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ...
Solid-State Electronics 48 (10-11), 1907-1910, 2004
562004
Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions
N Jin, SY Chung, AT Rice, PR Berger, PE Thompson, C Rivas, R Lake, ...
IEEE Transactions on Electron Devices 50 (9), 1876-1884, 2003
542003
Full band modeling of the excess current in a delta-doped silicon tunnel diode
C Rivas, R Lake, WR Frensley, G Klimeck, PE Thompson, KD Hobart, ...
Journal of applied physics 94 (8), 5005-5013, 2003
422003
Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
PE Thompson, KD Hobart, ME Twigg, GG Jernigan, TE Dillon, ...
Applied physics letters 75 (9), 1308-1310, 1999
391999
Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities
SL Rommel, TE Dillon, PR Berger, PE Thompson, KD Hobart, R Lake, ...
IEEE Electron Device Letters 20 (7), 329-331, 1999
371999
Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration
SY Chung, N Jin, PR Berger, R Yu, PE Thompson, R Lake, SL Rommel, ...
Applied physics letters 84 (14), 2688-2690, 2004
362004
Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm2 peak current density to enhance TFET drive current
D Pawlik, B Romanczyk, P Thomas, S Rommel, M Edirisooriya, ...
2012 International Electron Devices Meeting, 27.1. 1-27.1. 3, 2012
282012
p-on-n” Si interband tunnel diode grown by molecular beam epitaxy
KD Hobart, PE Thompson, SL Rommel, TE Dillon, PR Berger, DS Simons, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
222001
Epitaxial Si-based tunnel diodes
PE Thompson, KD Hobart, ME Twigg, SL Rommel, N Jin, PR Berger, ...
Thin Solid Films 380 (1-2), 145-150, 2000
222000
1.3 μm photoresponsivity in Si-based photodiodes
X Shao, SL Rommel, BA Orner, H Feng, MW Dashiell, RT Troeger, ...
Applied physics letters 72 (15), 1860-1862, 1998
221998
Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping
SL Rommel, D Pawlik, P Thomas, M Barth, K Johnson, SK Kurinec, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
212008
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Articles 1–20