| Fluorine-doping in titanium dioxide by ion implantation technique T Yamaki, T Umebayashi, T Sumita, S Yamamoto, M Maekawa, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003 | 227 | 2003 |
| Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements ZQ Chen, S Yamamoto, M Maekawa, A Kawasuso, XL Yuan, T Sekiguchi Journal of applied physics 94 (8), 4807-4812, 2003 | 199 | 2003 |
| Intrinsic defects in cubic silicon carbide H Itoh, A Kawasuso, T Ohshima, M Yoshikawa, I Nashiyama, S Tanigawa, ... physica status solidi (a) 162 (1), 173-198, 1997 | 189 | 1997 |
| Production and recovery of defects in phosphorus-implanted ZnO ZQ Chen, A Kawasuso, Y Xu, H Naramoto, XL Yuan, T Sekiguchi, ... Journal of Applied Physics 97 (1), 2005 | 181 | 2005 |
| Reflection high energy positron diffraction from a Si (111) surface A Kawasuso, S Okada Physical review letters 81 (13), 2695, 1998 | 120 | 1998 |
| Microstructure dependence of deuterium retention and blistering in the near-surface region of tungsten exposed to high flux deuterium plasmas of 38 eV at 315 K WM Shu, A Kawasuso, Y Miwa, E Wakai, GN Luo, T Yamanishi Physica Scripta 2007 (T128), 96, 2007 | 116 | 2007 |
| Evolution of voids in Al+-implanted ZnO probed by a slow positron beam ZQ Chen, M Maekawa, S Yamamoto, A Kawasuso, XL Yuan, T Sekiguchi, ... Physical Review B 69 (3), 035210, 2004 | 112 | 2004 |
| Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam ZQ Chen, A Kawasuso, Y Xu, H Naramoto, XL Yuan, T Sekiguchi, ... Physical Review B 71 (11), 115213, 2005 | 111 | 2005 |
| Annealing processes of vacancy‐type defects in electron‐irradiated and as‐grown 6H‐SiC studied by positron lifetime spectroscopy A Kawasuso, H Itoh, S Okada, H Okumura Journal of applied physics 80 (10), 5639-5645, 1996 | 106 | 1996 |
| Structure of silicene on a Ag (111) surface studied by reflection high-energy positron diffraction Y Fukaya, I Mochizuki, M Maekawa, K Wada, T Hyodo, I Matsuda, ... Physical Review B 88 (20), 205413, 2013 | 101 | 2013 |
| Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species ZQ Chen, M Maekawa, A Kawasuso, S Sakai, H Naramoto Journal of Applied Physics 99 (9), 2006 | 80 | 2006 |
| Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation ZQ Chen, SJ Wang, M Maekawa, A Kawasuso, H Naramoto, XL Yuan, ... Physical Review B 75 (24), 245206, 2007 | 75 | 2007 |
| Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy A Kawasuso, F Redmann, R Krause-Rehberg, T Frank, M Weidner, ... Journal of Applied Physics 90 (7), 3377-3382, 2001 | 69 | 2001 |
| Charge-to-spin conversion and spin diffusion in Bi/Ag bilayers observed by spin-polarized positron beam HJ Zhang, S Yamamoto, B Gu, H Li, M Maekawa, Y Fukaya, A Kawasuso Physical review letters 114 (16), 166602, 2015 | 67 | 2015 |
| Current-induced spin polarization on metal surfaces probed by spin-polarized positron beam HJ Zhang, S Yamamoto, Y Fukaya, M Maekawa, H Li, A Kawasuso, T Seki, ... Scientific reports 4 (1), 4844, 2014 | 64 | 2014 |
| Increase in the beam intensity of the linac-based slow positron beam and its application at the Slow Positron Facility, KEK K Wada, T Hyodo, A Yagishita, M Ikeda, S Ohsawa, T Shidara, ... The European Physical Journal D 66, 1-4, 2012 | 64 | 2012 |
| Annealing behavior of vacancies and levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy A Kawasuso, F Redmann, R Krause-Rehberg, M Weidner, T Frank, ... Applied physics letters 79 (24), 3950-3952, 2001 | 56 | 2001 |
| Recent findings on blistering and deuterium retention in tungsten exposed to high-fluence deuterium plasma WM Shu, A Kawasuso, T Yamanishi Journal of nuclear materials 386, 356-359, 2009 | 52 | 2009 |
| Charge state dependences of positron trapping rates associated with divacancies and vacancy-phosphorus pairs in Si A Kawasuso, M Hasegawa, M Suezawa, S Yamaguchi, KSK Sumino Japanese journal of applied physics 34 (5R), 2197, 1995 | 52* | 1995 |
| Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance A Kawasuso, H Itoh, N Morishita, M Yoshikawa, T Ohshima, I Nashiyama, ... Applied physics A 67, 209-212, 1998 | 50 | 1998 |
