Jong-Ho Lee

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Byung Gook ParkProfessor of Electrical Engineering, Seoul National UniversityVerified email at snu.ac.kr
Jong-Ho BaeKookmin UniversityVerified email at kookmin.ac.kr
Suhwan LimSamsung electronicsVerified email at snu.ac.kr
Jongmin ShinSamsung ElectronicsVerified email at samsung.com
Tai-su Park.Verified email at snu.ac.kr
Yoon KimUniversity of Seoul, School of Electrical and Computer Engineering, Associate ProfessorVerified email at uos.ac.kr
Sangwan KimDepartment of Electronic Engineering, Sogang UniversityVerified email at sogang.ac.kr
Ho-Jung KangSeoul National UniversityVerified email at snu.ac.kr
Hyungjin KimAssociate Professor, Hanyang UniversityVerified email at hanyang.ac.kr
Sung Hun JinIncheon National University (INU)Verified email at inu.ac.kr
Euijoon YoonKorea Institute of Energy TechnologyVerified email at kentech.ac.kr
Chi-Sun HwangETRIVerified email at etri.re.kr
Kyung-Chang RyooSamsung ElectronicsVerified email at samsung.com
Jong In KimPhD candidate, Dept of ECE, Seoul National UniversityVerified email at snu.ac.kr
Chan Hyeong ParkProfessor of Electronics and Communications Engineering, Kwangwoon University, Republic of KoreaVerified email at kw.ac.kr
Wonbo ShimSeoul National University of Science and TechnologyVerified email at seoultech.ac.kr
Sungjun KimDivision of Electronics and Electrical Engineering, Dongguk UniversityVerified email at dongguk.edu
Woo Young ChoiAssociate Professor, Department of Electrical and Computer Engineering, Seoul National UniversityVerified email at snu.ac.kr
Changhee LeeEVP, Display Research Center, Samsung Display Co.Verified email at samsung.com
Il Hwan ChoProfessor of electronic engineering, Myongji universityVerified email at mju.ac.kr

Jong-Ho Lee

Department of Electrical and Computer Engineering, Seoul National University

Verified email at snu.ac.kr - Homepage

Semiconductor Devices Neuromorphic Technology Gas Sensors


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors JM Lee, HIK In-Tak Cho, Jong-Ho Lee Apppl. Phys. Lett 93, 093504, 2008	642	2008
Three-dimensional NAND flash architecture design based on single-crystalline stacked array Y Kim, JG Yun, SH Park, W Kim, JY Seo, M Kang, KC Ryoo, JH Oh, ... IEEE Transactions on Electron Devices 59 (1), 35-45, 2011	311	2011
Single-crystalline Si stacked array (STAR) NAND flash memory JG Yun, G Kim, JE Lee, Y Kim, WB Shim, JH Lee, H Shin, JD Lee, ... IEEE Transactions on Electron Devices 58 (4), 1006-1014, 2011	253	2011
Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers T Park, S Choi, DH Lee, JR Yoo, BC Lee, JY Kim, CG Lee, KK Chi, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003	235	2003
Double-gate FinFET device and fabricating method thereof J Lee US Patent 6,885,055, 2005	231	2005
Method for making a silicon-on-insulator MOS transistor using a selective SiGe epitaxy JH Lee, JS Lyu, BW Kim US Patent 6,048,756, 2000	165	2000
Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses IT Cho, JM Lee, JH Lee, HI Kwon Semiconductor Science and Technology 24 (1), 015013, 2008	147	2008
FET-type gas sensors: A review S Hong, M Wu, Y Hong, Y Jeong, G Jung, W Shin, J Park, D Kim, D Jang, ... Sensors and Actuators B: Chemical 330, 129240, 2021	128	2021
Water-soluble thin film transistors and circuits based on amorphous indium–gallium–zinc oxide JAR Sung Hun Jin, Seung-Kyun Kang, In-Tak Cho, Sang Youn Han, Ha Uk Chung ... ACS applied materials & interfaces 7 (15), 8268-8274, 2015	127	2015
Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics JM Lee, IT Cho, JH Lee, WS Cheong, CS Hwang, HI Kwon Applied Physics Letters 94 (22), 2009	116	2009
Flash memory element and manufacturing method thereof JH Lee, HC Shin US Patent 6,768,158, 2004	114	2004
Room temperature single electron effects in a Si nano-crystal memory I Kim, S Han, K Han, J Lee, H Shin IEEE Electron Device Letters 20 (12), 630-631, 1999	92	1999
Scaling effect on silicon nitride memristor with highly doped Si substrate S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ... Small 14 (19), 1704062, 2018	91	2018
Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy JH Lee, G Taraschi, A Wei, TA Langdo, EA Fitzgerald, DA Antoniadis International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999	91	1999
Vertical channel field effect transistors having insulating layers thereon T Park, EJ Yoon, UI Chung, SY Choi, J Lee US Patent 7,148,541, 2006	87	2006
Emerging memory technologies for neuromorphic computing CH Kim, S Lim, SY Woo, WM Kang, YT Seo, ST Lee, S Lee, D Kwon, S Oh, ... Nanotechnology 30 (3), 032001, 2018	85	2018
Silicon-based floating-body synaptic transistor with frequency-dependent short-and long-term memories H Kim, J Park, MW Kwon, JH Lee, BG Park IEEE Electron Device Letters 37 (3), 249-252, 2016	85	2016
Highly selective ZnO gas sensor based on MOSFET having a horizontal floating-gate Yoonki Hong, Chang-Hee Kim, Jongmin Shin, Kyoung Yeon Kim, Jun Shik Kim ... Sensors and Actuators B 232, 653–659, 2016	82	2016
Adaptive Learning Rule for Hardware-based Deep Neural Networks Using Electronic Synapse Devices S Lim, JH Bae, JH Eum, S Lee, CH Kim, BG Park, JH Lee Neural Computing and Applications, 1-16, 2018	80	2018
Spiking neural network using synaptic transistors and neuron circuits for pattern recognition with noisy images H Kim, S Hwang, J Park, S Yun, JH Lee, BG Park IEEE Electron Device Letters 39 (4), 630-633, 2018	79	2018

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