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Martin Lefebvre
Martin Lefebvre
Ph.D. in Engineering Sciences, Université catholique de Louvain (ICTEAM)
Adresse e-mail validée de uclouvain.be
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A 0.086-mm 12.7-pJ/SOP 64k-Synapse 256-Neuron Online-Learning Digital Spiking Neuromorphic Processor in 28-nm CMOS
C Frenkel, M Lefebvre, JD Legat, D Bol
IEEE transactions on biomedical circuits and systems 13 (1), 145-158, 2018
3492018
Learning without feedback: Fixed random learning signals allow for feedforward training of deep neural networks
C Frenkel*, M Lefebvre*, D Bol
Frontiers in neuroscience 15, 2021
82*2021
7.7 A 0.2-to-3.6 TOPS/W Programmable Convolutional Imager SoC with In-Sensor Current-Domain Ternary-Weighted MAC Operations for Feature Extraction and Region-of-Interest Detection
M Lefebvre, L Moreau, R Dekimpe, D Bol
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 118-120, 2021
432021
Dynamical modeling of passively levitated electrodynamic thrust self-bearing machines
J Van Verdeghem, M Lefebvre, V Kluyskens, B Dehez
IEEE Transactions on Industry Applications 55 (2), 1447-1460, 2018
222018
SleepRider: A 5.5 μW/MHz cortex-M4 MCU in 28nm FD-SOI with ULP SRAM, biomedical AFE and fully-integrated power, clock and back-bias management
R Dekimpe, M Schramme, M Lefebvre, A Kneip, R Saeidi, M Xhonneux, ...
2021 Symposium on VLSI Circuits, 1-2, 2021
102021
A family of current references based on 2T voltage references: Demonstration in 0.18-μm with 0.1-nA PTAT and 1.1-μA CWT 38-ppm/° C designs
M Lefebvre, D Bol
IEEE Transactions on Circuits and Systems I: Regular Papers 69 (8), 3237-3250, 2022
72022
A 1-to-4b 16.8-POPS/W 473-TOPS/mm2 6T-based In-Memory Computing SRAM in 22nm FD-SOI with Multi-Bit Analog Batch-Normalization
A Kneip, M Lefebvre, J Verecken, D Bol
ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC …, 2022
52022
Dynamic modelling of passive electrodynamic self-bearing axial-flux permanent magnet machines
M Lefebvre, J Van Verdeghem, V Kluyskens, B Dehez
2017 IEEE International Electric Machines and Drives Conference (IEMDC), 1-8, 2017
52017
IMPACT: A 1-to-4b 813-TOPS/W 22-nm FD-SOI Compute-in-Memory CNN Accelerator Featuring a 4.2-POPS/W 146-TOPS/mm CIM-SRAM With Multi-Bit Analog …
A Kneip, M Lefebvre, J Verecken, D Bol
IEEE Journal of Solid-State Circuits, 2023
32023
A 0.9-nA Temperature-Independent 565-ppm/° C Self-Biased Current Reference in 22-nm FDSOI
M Lefebvre, D Flandre, D Bol
ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC …, 2022
32022
A 1.1-/ 0.9-nA Temperature-Independent 213-/ 565-ppm/C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI
M Lefebvre, D Flandre, D Bol
IEEE Journal of Solid-State Circuits, 2023
2023
Design, modelling and prototyping of an electrodynamic self-bearing axial-flux permanent magnet motor
M Lefebvre, B Dehez
2017
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