Jinqiao Xie
Jinqiao Xie
Qorvo Inc
Verified email at qorvo.com
Cited by
Cited by
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with -doped quantum well barriers
J Xie, X Ni, Q Fan, R Shimada, Ü Özgür, H Morkoç
Applied Physics Letters 93 (12), 121107, 2008
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
Photoresponse of heterojunction diodes grown by plasma-assisted molecular-beam epitaxy
YI Alivov, Ü Özgür, S Doğan, D Johnstone, V Avrutin, N Onojima, C Liu, ...
Applied Physics Letters 86 (24), 241108, 2005
High electron mobility in nearly lattice-matched heterostructure field effect transistors
J Xie, X Ni, M Wu, JH Leach, Ü Özgür, H Morkoç
Applied Physics Letters 91 (13), 132116, 2007
Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar
physica status solidi c 8 (7‐8), 2031-2033, 2011
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar
Journal of Applied Physics 108 (4), 043510, 2010
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 191914, 2012
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 171102, 2013
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (12), 122101, 2012
Cavity polaritons in ZnO-based hybrid microcavities
R Shimada, J Xie, V Avrutin, U Ozgur, H Morkoç
Applied Physics Letters 92 (1), 011127-011127-3, 2008
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo
Applied Physics Letters 106 (14), 142107, 2015
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport
Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (5), 055504, 2012
Gallium nitride on high thermal conductivity material device and method
X Gu, J Xie, EA Beam III, DC Dumka, CC Lee
US Patent 9,337,278, 2016
Inhibition of atherogenesis in LDLR knockout mice by systemic delivery of adeno-associated virus type 2-hIL-10
Y Liu, D Li, J Chen, J Xie, S Bandyopadhyay, D Zhang, ...
Atherosclerosis 188 (1), 19-27, 2006
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ...
Applied Physics Letters 103 (16), 161901, 2013
The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures
A Teke, S Gökden, R Tülek, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ...
New Journal of Physics 11 (6), 063031, 2009
Low dislocation densities and long carrier lifetimes in GaN thin films grown on a nanonetwork
J Xie, Ü Özgür, Y Fu, X Ni, H Morkoç, CK Inoki, TS Kuan, JV Foreman, ...
Applied physics letters 90 (4), 041107, 2007
Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy
J Spradlin, S Doǧan, J Xie, R Molnar, AA Baski, H Morkoç
Applied physics letters 84 (21), 4150-4152, 2004
Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy
Y Fu, YT Moon, F Yun, Ü Özgür, JQ Xie, S Doğan, H Morkoç, CK Inoki, ...
Applied Physics Letters 86 (4), 043108, 2005
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