| Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization T Gühne, Z Bougrioua, P Vennéguès, M Leroux, M Albrecht Journal of applied physics 101 (11), 2007 | 124 | 2007 |
| Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP (001) H Marchand, P Desjardins, S Guillon, JE Paultre, Z Bougrioua, RYF Yip, ... Applied physics letters 71 (4), 527-529, 1997 | 116 | 1997 |
| Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT‐like structures Z Bougrioua, I Moerman, L Nistor, B Van Daele, E Monroy, T Palacios, ... physica status solidi (a) 195 (1), 93-100, 2003 | 100 | 2003 |
| Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on m-plane sapphire by metalorganic vapor phase epitaxy P Vennegues, Z Bougrioua, T Guehne Japanese Journal of Applied Physics 46 (7R), 4089, 2007 | 87 | 2007 |
| Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE Z Bougrioua, M Azize, P Lorenzini, M Laügt, H Haas physica status solidi (a) 202 (4), 536-544, 2005 | 70 | 2005 |
| Electrical conductivity improvement of Fe doped ZnO nanopowders H Saadi, FIH Rhouma, Z Benzarti, Z Bougrioua, S Guermazi, K Khirouni Materials Research Bulletin 129, 110884, 2020 | 68 | 2020 |
| Method of producing self supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer EP Feltin, Z Bougrioua, G Nataf US Patent 7,282,381, 2007 | 62 | 2007 |
| Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕ GaN heterostructures under small dose gamma irradiation AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ... Journal of applied physics 103 (8), 2008 | 60 | 2008 |
| Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission Z Bougrioua, M Laügt, P Vennéguès, I Cestier, T Gühne, E Frayssinet, ... physica status solidi (a) 204 (1), 282-289, 2007 | 58 | 2007 |
| Thermal stability of Pt-and Ni-based Schottky contacts on GaN and Al0. 31Ga0. 69N E Monroy, F Calle, R Ranchal, T Palacios, M Verdu, FJ Sanchez, ... Semiconductor science and technology 17 (9), L47, 2002 | 56 | 2002 |
| Silicon-Based Monolithic Planar Micro Thermoelectric Generator Using Bonding Technology K Ziouche, Z Yuan, P Lejeune, T Lasri, D Leclercq, Z Bougrioua Journal of Microelectromechanical Systems, 2016 | 55 | 2016 |
| A planar micro thermoelectric generator with high thermal resistance Z Yuan, K Ziouche, Z Bougrioua, P Lejeune, T Lasri, D Leclercq Sensors and Actuators A: Physical 221, 67-76, 2015 | 55 | 2015 |
| Free-carrier mobility in GaN in the presence of dislocation walls JL Farvacque, Z Bougrioua, I Moerman Physical Review B 63 (11), 115202, 2001 | 54 | 2001 |
| Magnesium diffusion profile in GaN grown by MOVPE Z Benzarti, I Halidou, Z Bougrioua, T Boufaden, B El Jani Journal of crystal growth 310 (14), 3274-3277, 2008 | 50 | 2008 |
| Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ... Journal of applied physics 105 (7), 2009 | 49 | 2009 |
| Anisotropy-induced polarization mixture of surface acoustic waves in Ga N∕ c-sapphire heterostructures J Pedrós, F Calle, J Grajal, RJJ Riobóo, Y Takagaki, KH Ploog, ... Physical Review B 72 (7), 075306, 2005 | 48 | 2005 |
| Material optimisation for AlGaN/GaN HFET applications Z Bougrioua, I Moerman, N Sharma, RH Wallis, J Cheyns, K Jacobs, ... Journal of crystal growth 230 (3-4), 573-578, 2001 | 48 | 2001 |
| Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns Z Bougrioua, P Gibart, E Calleja, U Jahn, A Trampert, J Ristic, M Utrera, ... Journal of crystal growth 309 (2), 113-120, 2007 | 45 | 2007 |
| Detailed interpretation of electron transport in C Mavroidis, JJ Harris, MJ Kappers, CJ Humphreys, Z Bougrioua Journal of applied physics 93 (11), 9095-9103, 2003 | 41 | 2003 |
| On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates P Vennéguès, JM Chauveau, Z Bougrioua, T Zhu, D Martin, N Grandjean Journal of Applied Physics 112 (11), 2012 | 40 | 2012 |
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceVerified email at cea.fr
