Kaan Oguz
Kaan Oguz
Research Engineer, Components Research, Intel
Verified email at tcd.ie
Cited by
Cited by
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
Balancing energy barrier between states in perpendicular magnetic tunnel junctions
CC Kuo, BS Doyle, A Raychowdhury, RG Mojarad, K Oguz
US Patent 9,472,748, 2016
Magnetoresistance in magnetic tunnel junctions with an organic barrier and an MgO spin filter
G Szulczewski, H Tokuc, K Oguz, JMD Coey
Applied Physics Letters 95 (20), 202506, 2009
Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
K Oguz, ML Doczy, B Doyle, U Shah, DL Kencke, RG MOJARAD, ...
US Patent 8,836,056, 2014
Magnetic dead layers in sputtered films
K Oguz, P Jivrajka, M Venkatesan, G Feng, JMD Coey
Journal of Applied Physics 103 (7), 07B526, 2008
Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes
H Kurt, K Rode, K Oguz, M Boese, CC Faulkner, JMD Coey
Applied Physics Letters 96 (26), 262501, 2010
Perpendicular magnetic anisotropy in CoFeB/Pd bilayers
C Fowley, N Decorde, K Oguz, K Rode, H Kurt, JMD Coey
IEEE transactions on magnetics 46 (6), 2116-2118, 2010
Giant tunneling magnetoresistance with electron beam evaporated MgO barrier and CoFeB electrodes
H Kurt, K Oguz, T Niizeki, JMD Coey
Journal of Applied Physics 107 (8), 083920, 2010
Electric field induced changes in the coercivity of a thin-film ferromagnet
C Fowley, K Rode, K Oguz, H Kurt, JMD Coey
Journal of Physics D: Applied Physics 44 (30), 305001, 2011
Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
BS Doyle, CC Kuo, K Oguz, U Shah, EV Karpov, RG Mojarad, ML Doczy, ...
US Patent 8,796,797, 2014
Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers
CC Kuo, K Oguz, ML Doczy, BS Doyle, S Suri, RS Chau, DL Kencke, ...
US Patent App. 14/039,668, 2015
Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same
BS Doyle, DL Kencke, CC Kuo, U Shah, K Oguz, ML Doczy, S Suri, ...
US Patent 8,786,040, 2014
Room-temperature magnetoresistance in CoFeB/STO/CoFeB magnetic tunnel junctions
K Oguz, JMD Coey
Journal of magnetism and magnetic materials 321 (8), 1009-1011, 2009
Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer
CC Kuo, K Oguz, BS Doyle, ML Doczy, DL Kencke, S Suri, RS Chau
US Patent 9,882,121, 2018
Investigation of extrinsic damping caused by magnetic dead layer in Ta-CoFeB-MgO multilayers with perpendicular anisotropy
N Sato, KP O'Brien, K Millard, B Doyle, K Oguz
Journal of Applied Physics 119 (9), 093902, 2016
High stability spintronic memory
CC Kuo, K Oguz, BS Doyle, EV Karpov, RG Mojarad, DL Kencke, ...
US Patent 9,231,194, 2016
Method for reducing size and center positioning of magnetic memory element contacts
BS Doyle, YJ Lee, CC Kuo, DL Kencke, K Oguz, RG Mojard, U Shah
US Patent 9,793,467, 2017
Magnetoresistance in CuPc based organic magnetic tunnel junctions
H Tokuc, K Oguz, F Burke, JMD Coey
Journal of Physics: Conference Series 303 (1), 012097, 2011
Morphology, order, light transmittance, and water vapor permeability of aluminum‐coated polypropylene zeolite composite films
D Balköse, K Oguz, L Ozyuzer, S Tari, E Arkis, FO Omurlu
Journal of applied polymer science 120 (3), 1671-1678, 2011
Spin transfer torque memory (STTM) device with half-metal and method to write and read the device
CC Kuo, RG Mojarad, BS Doyle, DL Kencke, K Oguz, RS Chau
US Patent 9,728,238, 2017
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