Babak Fallahazad
Babak Fallahazad
SoC Device Engineer, Intel
Verified email at intel.com
Title
Cited by
Cited by
Year
The role of surface oxygen in the growth of large single-crystal graphene on copper
Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ...
Science 342 (6159), 720-723, 2013
9922013
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
S Larentis, B Fallahazad, E Tutuc
Applied Physics Letters 101 (22), 223104, 2012
4602012
van der Waals heterostructures with high accuracy rotational alignment
K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ...
Nano letters 16 (3), 1989-1995, 2016
2862016
Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene
K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ...
Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017
2782017
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ...
ACS nano 9 (10), 10402-10410, 2015
1862015
Gate-tunable resonant tunneling in double bilayer graphene heterostructures
B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ...
Nano letters 15 (1), 428-433, 2015
1472015
Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures
S Larentis, JR Tolsma, B Fallahazad, DC Dillen, K Kim, AH MacDonald, ...
Nano letters 14 (4), 2039-2045, 2014
1362014
Chemical potential and quantum Hall ferromagnetism in bilayer graphene
K Lee, B Fallahazad, J Xue, DC Dillen, K Kim, T Taniguchi, K Watanabe, ...
Science 345 (6192), 58-61, 2014
1322014
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer : Landau Level Degeneracy, Effective Mass, and Negative Compressibility
B Fallahazad, HCP Movva, K Kim, S Larentis, T Taniguchi, K Watanabe, ...
Physical review letters 116 (8), 086601, 2016
1292016
Dielectric thickness dependence of carrier mobility in graphene with top dielectric
B Fallahazad, S Kim, L Colombo, E Tutuc
Applied Physics Letters 97 (12), 123105, 2010
1202010
Scaling of Al2O3 dielectric for graphene field-effect transistors
B Fallahazad, K Lee, G Lian, S Kim, CM Corbet, DA Ferrer, L Colombo, ...
Applied Physics Letters 100 (9), 093112, 2012
1142012
Band Alignment in WSe2–Graphene Heterostructures
K Kim, S Larentis, B Fallahazad, K Lee, J Xue, DC Dillen, CM Corbet, ...
ACS nano 9 (4), 4527-4532, 2015
1102015
High performance wire‐array silicon solar cells
O Gunawan, K Wang, B Fallahazad, Y Zhang, E Tutuc, S Guha
Progress in Photovoltaics: Research and Applications 19 (3), 307-312, 2011
1092011
Direct measurement of the Fermi energy in graphene using a double-layer heterostructure
S Kim, I Jo, DC Dillen, DA Ferrer, B Fallahazad, Z Yao, SK Banerjee, ...
Physical review letters 108 (11), 116404, 2012
972012
Experimental demonstration of phase modulation and motion sensing using graphene-integrated metasurfaces
N Dabidian, S Dutta-Gupta, I Kholmanov, K Lai, F Lu, J Lee, M Jin, ...
Nano letters 16 (6), 3607-3615, 2016
682016
Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer
HCP Movva, B Fallahazad, K Kim, S Larentis, T Taniguchi, K Watanabe, ...
Physical review letters 118 (24), 247701, 2017
652017
Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits
S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ...
ACS nano 11 (5), 4832-4839, 2017
642017
Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET
S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ...
Electron Device Letters 36 (4), 405 - 407, 2015
572015
Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition
B Fallahazad, Y Hao, K Lee, S Kim, RS Ruoff, E Tutuc
Physical Review B 85 (20), 201408, 2012
482012
Large effective mass and interaction-enhanced Zeeman splitting of -valley electrons in
S Larentis, HCP Movva, B Fallahazad, K Kim, A Behroozi, T Taniguchi, ...
Physical Review B 97 (20), 201407, 2018
472018
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