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Chia-Sheng Hsu
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Performance analysis and enhancement of negative capacitance logic devices based on internally resistive ferroelectrics
CS Hsu, C Pan, A Naeemi
IEEE Electron Device Letters 39 (5), 765-768, 2018
152018
Understanding the switching mechanisms of the antiferromagnet/ferromagnet heterojunction
YC Liao, DE Nikonov, S Dutta, SC Chang, CS Hsu, IA Young, A Naeemi
Nano Letters 20 (11), 7919-7926, 2020
132020
A theoretical study of multidomain ferroelectric switching dynamics with a physics-based SPICE circuit model for phase-field simulations
CS Hsu, SC Chang, DE Nikonov, IA Young, A Naeemi
IEEE Transactions on Electron Devices 67 (7), 2952-2959, 2020
122020
Evaluating the performances of the ultralow power magnetoelectric random access memory with a physics-based compact model of the antiferromagnet/ferromagnet bilayer
YC Liao, CS Hsu, D Nikonov, SC Chang, H Li, IA Young, A Naeemi
IEEE Transactions on Electron Devices 69 (5), 2331-2337, 2022
92022
Physics-based models for magneto-electric spin-orbit logic circuits
H Li, DE Nikonov, CC Lin, K Camsari, YC Liao, CS Hsu, A Naeemi, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022
82022
Hysteresis-free negative capacitance effect in metal-ferroelectric-insulator-metal capacitors with dielectric leakage and interfacial trapped charges
CS Hsu, SC Chang, DE Nikonov, IA Young, A Naeemi
Physical Review Applied 15 (3), 034048, 2021
72021
A micromagnetic study of the switching dynamics of the BiFeO/CoFe heterojunction
YC Liao, DE Nikonov, S Dutta, SC Chang, CS Hsu, IA Young, A Naeemi
arXiv preprint arXiv:2004.08453, 2020
32020
Endurance evaluation on OTS-PCM device using constant current stress scheme
WC Chien, LM Gignac, YC Chou, CH Yang, N Gong, HY Ho, CW Yeh, ...
2022 IEEE International Reliability Physics Symposium (IRPS), P7-1-P7-4, 2022
22022
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85 °C and High Endurance 3D Crosspoint Memory : IBM …
HY Cheng, A Grun, WC Chien, CW Yeh, A Ray, CW Cheng, EK Lai, ...
2022 International Electron Devices Meeting (IEDM), 18.5. 1-18.5. 4, 2022
12022
Device Study on OTS-PCM for Persistent Memory Application: IBM/Macronix Phase Change Memory Joint Project
WC Chien, LM Gignac, YC Chou, CH Yang, N Gong, HY Ho, CW Yeh, ...
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022
12022
Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges
CS Hsu, SC Chang, DE Nikonov, IA Young, A Naeemi
arXiv preprint arXiv:2012.02691, 2020
2020
ii IEEE Journal on Exploratory Solid-State Computational Devices and Circuits—Vol. 8, No. 1 by A. Naeemi PAPERS
AH Lone, S Amara, H Fariborzi, H Li, DE Nikonov, CC Lin, K Camsari, ...
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