A 90 nm 1.8 V 512 Mb diode-switch PRAM with 266 MB/s read throughput KJ Lee, BH Cho, WY Cho, S Kang, BG Choi, HR Oh, CS Lee, HJ Kim, ...
IEEE Journal of Solid-State Circuits 43 (1), 150-162, 2008
332 2008 A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM) WY Cho, BH Cho, BG Choi, HR Oh, S Kang, KS Kim, KH Kim, DE Kim, ...
IEEE Journal of Solid-State Circuits 40 (1), 293-300, 2005
226 2005 A 0.1- S Kang, WY Cho, BH Cho, KJ Lee, CS Lee, HR Oh, BG Choi, Q Wang, ...
IEEE Journal of Solid-State Circuits 42 (1), 210-218, 2006
223 2006 Enhanced write performance of a 64-mb phase-change random access memory HR Oh, B Cho, WY Cho, S Kang, B Choi, H Kim, K Kim, D Kim, C Kwak, ...
IEEE Journal of Solid-State Circuits 41 (1), 122-126, 2005
139 2005 Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory JB Park, GS Park, HS Baik, JH Lee, H Jeong, K Kim
Journal of the electrochemical society 154 (3), H139, 2007
112 2007 Effect of lattice contraction on the Raman shifts of CdSe quantum dots in glass matrices YN Hwang, S Shin, HL Park, SH Park, U Kim, HS Jeong, E Shin, D Kim
Physical Review B 54 (21), 15120, 1996
112 1996 Semiconductor device having multilayer interconnection structure and manufacturing method thereof W Yang, K Kim, HS Jeong
US Patent 6,836,019, 2004
94 2004 Memory device employing NVRAM and flash memory cells BG Jeon, BJ Min, HS Jeong
US Patent 7,916,538, 2011
81 2011 Ge nitride formation in N-doped amorphous MC Jung, YM Lee, HD Kim, MG Kim, HJ Shin, KH Kim, SA Song, ...
Applied Physics Letters 91 (8), 083514, 2007
74 2007 Changes in the electronic structures and optical band gap of YK Kim, K Jeong, MH Cho, U Hwang, HS Jeong, K Kim
Applied physics letters 90 (17), 171920, 2007
74 2007 Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ...
Japanese Journal of Applied Physics 44 (4S), 2691, 2005
66 2005 A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme G Jeong, W Cho, S Ahn, H Jeong, G Koh, Y Hwang, K Kim
IEEE Journal of solid-state circuits 38 (11), 1906-1910, 2003
65 2003 Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials KB Borisenko, Y Chen, DJH Cockayne, SA Song, HS Jeong
Acta materialia 59 (11), 4335-4342, 2011
44 2011 Thermal and electrical conduction of single-crystal Bi 2 Te 3 nanostructures grown using a one step process D Park, S Park, K Jeong, HS Jeong, JY Song, MH Cho
Scientific reports 6 (1), 1-9, 2016
42 2016 Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof W Yang, YS Hwang, HS Jeong, K Kim
US Patent 6,764,941, 2004
40 2004 A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM H Yoon, GW Cha, C Yoo, NJ Kim, KY Kim, CH Lee, KN Lim, K Lee, ...
IEEE Journal of Solid-State Circuits 34 (11), 1589-1599, 1999
39 1999 In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides SA Song, W Zhang, HS Jeong, JG Kim, YJ Kim
Ultramicroscopy 108 (11), 1408-1419, 2008
38 2008 Phase-changeable memory device and method of manufacturing the same SG Yang, HS Jeong, YN Hwang
US Patent 7,295,463, 2007
36 2007 Highly reliable ring-type contact for high-density phase change memory CW Jeong, SJ Ahn, YN Hwang, YJ Song, JH Oh, SY Lee, SH Lee, ...
Japanese journal of applied physics 45 (4S), 3233, 2006
36 2006 Resistive memory devices KC Ryoo, HS Jeong, GT Jeong, HJ Kim, D Lim
US Patent App. 12/273,271, 2009
31 2009 
Kyung-Chang RyooSamsung ElectronicsGeverifieerd e-mailadres voor samsung.com
