A 90 nm 1.8 V 512 Mb diode-switch PRAM with 266 MB/s read throughput KJ Lee, BH Cho, WY Cho, S Kang, BG Choi, HR Oh, CS Lee, HJ Kim, ...
IEEE Journal of Solid-State Circuits 43 (1), 150-162, 2008
351 2008 A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM) WY Cho, BH Cho, BG Choi, HR Oh, S Kang, KS Kim, KH Kim, DE Kim, ...
IEEE Journal of Solid-State Circuits 40 (1), 293-300, 2005
235 2005 A 0.1- S Kang, WY Cho, BH Cho, KJ Lee, CS Lee, HR Oh, BG Choi, Q Wang, ...
IEEE Journal of Solid-State Circuits 42 (1), 210-218, 2006
233 2006 Enhanced write performance of a 64-mb phase-change random access memory HR Oh, B Cho, WY Cho, S Kang, B Choi, H Kim, K Kim, D Kim, C Kwak, ...
IEEE Journal of Solid-State Circuits 41 (1), 122-126, 2005
143 2005 Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory JB Park, GS Park, HS Baik, JH Lee, H Jeong, K Kim
Journal of the electrochemical society 154 (3), H139, 2007
116 2007 Effect of lattice contraction on the Raman shifts of CdSe quantum dots in glass matrices YN Hwang, S Shin, HL Park, SH Park, U Kim, HS Jeong, E Shin, D Kim
Physical Review B 54 (21), 15120, 1996
111 1996 Memory device employing NVRAM and flash memory cells B Jeon, B Min, H Jeong
US Patent 7,916,538, 2011
101 2011 Semiconductor device having multilayer interconnection structure and manufacturing method thereof W Yang, K Kim, H Jeong
US Patent 6,836,019, 2004
94 2004 Ge nitride formation in N-doped amorphous MC Jung, YM Lee, HD Kim, MG Kim, HJ Shin, KH Kim, SA Song, ...
Applied Physics Letters 91 (8), 083514, 2007
79 2007 Changes in the electronic structures and optical band gap of YK Kim, K Jeong, MH Cho, UK Hwang, HS Jeong, K Kim
Applied physics letters 90 (17), 171920, 2007
74 2007 A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme G Jeong, W Cho, S Ahn, H Jeong, G Koh, Y Hwang, K Kim
IEEE Journal of solid-state circuits 38 (11), 1906-1910, 2003
69 2003 Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ...
Japanese Journal of Applied Physics 44 (4S), 2691, 2005
68 2005 Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials KB Borisenko, Y Chen, DJH Cockayne, SA Song, HS Jeong
Acta materialia 59 (11), 4335-4342, 2011
47 2011 Thermal and electrical conduction of single-crystal Bi 2 Te 3 nanostructures grown using a one step process D Park, S Park, K Jeong, HS Jeong, JY Song, MH Cho
Scientific reports 6 (1), 1-9, 2016
46 2016 Memristor devices for neural networks H Jeong, L Shi
Journal of Physics D: Applied Physics 52 (2), 023003, 2018
41 2018 Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof W Yang, Y Hwang, H Jeong, K Kim
US Patent 6,764,941, 2004
41 2004 Highly reliable ring-type contact for high-density phase change memory CW Jeong, SJ Ahn, YN Hwang, YJ Song, JH Oh, SY Lee, SH Lee, ...
Japanese journal of applied physics 45 (4S), 3233, 2006
40 2006 A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM H Yoon, GW Cha, C Yoo, NJ Kim, KY Kim, CH Lee, KN Lim, K Lee, ...
IEEE Journal of Solid-State Circuits 34 (11), 1589-1599, 1999
40 1999 In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides SA Song, W Zhang, HS Jeong, JG Kim, YJ Kim
Ultramicroscopy 108 (11), 1408-1419, 2008
39 2008 Phase-changeable memory device and method of manufacturing the same S Yang, H Jeong, Y Hwang
US Patent 7,295,463, 2007
36 2007 
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