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Dan Haeger
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Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than+/-15 degrees in the C-direction
PS Hsu, KM Kelchner, RM Farrell, DA Haeger, H Ohta, A Tyagi, ...
US Patent 9,077,151, 2015
2652015
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm
A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...
Applied Physics Express 3 (1), 011002, 2009
1212009
Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes
RM Farrell, DF Feezell, MC Schmidt, DA Haeger, KM Kelchner, K Iso, ...
Japanese Journal of Applied Physics 46 (8L), L761, 2007
1042007
Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
RM Farrell, PS Hsu, DA Haeger, K Fujito, SP DenBaars, JS Speck, ...
Applied Physics Letters 96 (23), 2010
942010
LED with internally confined current injection area
K McGroddy, HH Hu, A Bibl, CKT Chan, DA Haeger
US Patent 9,450,147, 2016
872016
Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate
YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ...
Applied physics express 2 (8), 082102, 2009
792009
LED structures for reduced non-radiative sidewall recombination
DP Bour, K McGroddy, DA Haeger, JM Perkins, A Chakraborty, JJP Drolet
US Patent 9,484,492, 2016
692016
Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding
KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ...
Applied Physics Express 2 (7), 071003, 2009
602009
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
RM Farrell, DA Haeger, PS Hsu, K Fujito, DF Feezell, SP DenBaars, ...
Applied Physics Letters 99 (17), 2011
592011
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
RM Farrell, DA Haeger, X Chen, CS Gallinat, RW Davis, M Cornish, ...
Applied Physics Letters 96 (23), 2010
562010
LED structures for reduced non-radiative sidewall recombination
DP Bour, K McGroddy, DA Haeger, JM Perkins, A Chakraborty, JJP Drolet, ...
US Patent 9,865,772, 2018
492018
Semipolar iii-nitride laser diodes with etched mirrors
A Tyagi, RM Farrell, CY Huang, PS Hsu, DA Haeger, KM Kelchner, ...
US Patent App. 12/908,478, 2011
432011
LED structures for reduced non-radiative sidewall recombination
DP Bour, K McGroddy, DA Haeger, JM Perkins, A Chakraborty, JJP Drolet, ...
US Patent 9,601,659, 2017
412017
InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates
PS Hsu, KM Kelchner, A Tyagi, RM Farrell, DA Haeger, K Fujito, H Ohta, ...
Applied physics express 3 (5), 052702, 2010
412010
Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
RM Farrell, DA Haeger, X Chen, M Iza, A Hirai, KM Kelchner, K Fujito, ...
Journal of crystal growth 313 (1), 1-7, 2010
402010
High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes
RM Farrell, DA Haeger, PS Hsu, MC Schmidt, K Fujito, DF Feezell, ...
Applied Physics Letters 99 (17), 2011
392011
384 nm laser diode grown on a (202 1) semipolar relaxed AlGaN buffer layer
DA Haeger, EC Young, RB Chung, F Wu, NA Pfaff, M Tsai, K Fujito, ...
Applied Physics Letters 100 (16), 2012
352012
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
MT Hardy, F Wu, P Shan Hsu, DA Haeger, S Nakamura, JS Speck, ...
Journal of Applied Physics 114 (18), 2013
312013
LED with internally confined current injection area
K McGroddy, HH Hu, A Bibl, CKT Chan, DA Haeger
US Patent 10,593,832, 2020
272020
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
EC Young, F Wu, AE Romanov, DA Haeger, S Nakamura, SP Denbaars, ...
Applied Physics Letters 101 (14), 2012
222012
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