Shadi A. Dayeh
Title
Cited by
Cited by
Year
ZnO nanowire UV photodetectors with high internal gain
C Soci, A Zhang, B Xiang, SA Dayeh, DPR Aplin, J Park, XY Bao, YH Lo, ...
Nano letters 7 (4), 1003-1009, 2007
23582007
Anisotropic swelling and fracture of silicon nanowires during lithiation
XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ...
Nano letters 11 (8), 3312-3318, 2011
6292011
Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition
B Xiang, P Wang, X Zhang, Shadi. A. Dayeh,, DPR Aplin, C Soci, D Yu, ...
Nano letters 7 (2), 323-328, 2007
5172007
In situ atomic-scale imaging of electrochemical lithiation in silicon
XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ...
Nature nanotechnology 7 (11), 749-756, 2012
4522012
Ultrafast electrochemical lithiation of individual Si nanowire anodes
XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ...
Nano letters 11 (6), 2251-2258, 2011
3722011
Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes
B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ...
ACS nano 7 (2), 1437-1445, 2013
3672013
High electron mobility InAs nanowire field‐effect transistors
SA Dayeh, DPR Aplin, X Zhou, PKL Yu, ET Yu, D Wang
small 3 (2), 326-332, 2007
3422007
Precise semiconductor nanowire placement through dielectrophoresis
S Raychaudhuri, SA Dayeh, D Wang, ET Yu
Nano letters 9 (6), 2260-2266, 2009
2192009
Lattice strain effects on the optical properties of MoS2 nanosheets
L Yang, X Cui, J Zhang, K Wang, M Shen, S Zeng, SA Dayeh, L Feng, ...
Scientific reports 4, 5649, 2014
2052014
III-V nanowire growth mechanism: V/III ratio and temperature effects
A Shadi, TY Edward, D Wang
Nano letters 7 (8), 2486-2490, 2007
2012007
Direct observation of nanoscale size effects in Ge semiconductor nanowire growth
SA Dayeh, ST Picraux
Nano letters 10 (10), 4032-4039, 2010
1502010
Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors
SA Dayeh, C Soci, PKL Yu, ET Yu, D Wang
Applied Physics Letters 90 (16), 162112, 2007
1222007
Growth, defect formation, and morphology control of germanium–silicon semiconductor nanowire heterostructures
SA Dayeh, J Wang, N Li, JY Huang, AV Gin, ST Picraux
Nano letters 11 (10), 4200-4206, 2011
1202011
Heteroepitaxial growth of vertical GaAs nanowires on Si (111) substrates by metal− organic chemical vapor deposition
XY Bao, C Soci, D Susac, J Bratvold, DPR Aplin, W Wei, CY Chen, ...
Nano letters 8 (11), 3755-3760, 2008
1112008
Micromachined infrared bolometers on flexible polyimide substrates
SA Dayeh, DP Butler, Z Celik-Butler
Sensors and Actuators A: Physical 118 (1), 49-56, 2005
1112005
Surface diffusion and substrate− nanowire adatom exchange in InAs nanowire growth
SA Dayeh, ET Yu, D Wang
Nano letters 9 (5), 1967-1972, 2009
1022009
Direct observation of ballistic and drift carrier transport regimes in InAs nanowires
X Zhou, SA Dayeh, D Aplin, D Wang, ET Yu
Applied Physics Letters 89 (5), 053113, 2006
1012006
Electron transport in indium arsenide nanowires
SA Dayeh
Semiconductor Science and Technology 25 (2), 024004, 2010
992010
Transport properties of InAs nanowire field effect transistors: The effects of surface states
SA Dayeh, C Soci, PKL Yu, ET Yu, D Wang
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
952007
Structural and Room‐Temperature Transport Properties of Zinc Blende and Wurtzite InAs Nanowires
SA Dayeh, D Susac, KL Kavanagh, ET Yu, D Wang
Advanced Functional Materials 19 (13), 2102-2108, 2009
892009
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Articles 1–20