| Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment FA Stevie, PM Kahora, DS Simons, P Chi Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (1 …, 1988 | 195 | 1988 |
| Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon LH Zhang, KS Jones, PH Chi, DS Simons Applied physics letters 67 (14), 2025-2027, 1995 | 172 | 1995 |
| Electrohydrodynamic ionization mass spectrometry-the ionization of liquid glycerol and non-volatile organic solutes DS Simons, BN Colby, CA Evans Jr International Journal of Mass Spectrometry and Ion Physics 15 (3), 291-302, 1974 | 165 | 1974 |
| Secondary ion mass spectrometry SIMS V: proceedings of the fifth international conference, Washington, DC, September 30–October 4, 1985 A Benninghoven, RJ Colton, DS Simons, HW Werner Springer Science & Business Media, 2012 | 144 | 2012 |
| Al and B ion‐implantations in 6H‐and 3C‐SiC MV Rao, P Griffiths, OW Holland, G Kelner, JA Freitas Jr, DS Simons, ... Journal of applied physics 77 (6), 2479-2485, 1995 | 128 | 1995 |
| Evaluation of the local thermal equilibrium model for quantitative secondary ion mass spectrometric analysis DS Simons, JE Baker, CA Evans Analytical Chemistry 48 (9), 1341-1348, 1976 | 86 | 1976 |
| Molecular ion imaging and dynamic secondary-ion mass spectrometry of organic compounds G Gillen, DS Simons, P Williams Analytical chemistry 62 (19), 2122-2130, 1990 | 85 | 1990 |
| Mass spectrometry of solvated ions generated directly from the liquid phase by electrohydrodynamic ionization BP Stimpson, DS Simons, CA Evans Jr The Journal of Physical Chemistry 82 (6), 660-670, 1978 | 71 | 1978 |
| Surface segregation and structure of Sb-doped Si (100) films grown at low temperature by molecular beam epitaxy KD Hobart, DJ Godbey, ME Twigg, M Fatemi, PE Thompson, DS Simons Surface Science 334 (1-3), 29-38, 1995 | 67 | 1995 |
| Doping of gallium nitride using disilane AE Wickenden, LB Rowland, K Doverspike, DK Gaskill, JA Freitas, ... Journal of electronic materials 24, 1547-1550, 1995 | 66 | 1995 |
| Low‐temperature cleaning processes for Si molecular beam epitaxy PE Thompson, ME Twigg, DJ Godbey, KD Hobart, DS Simons Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 64 | 1993 |
| Diffusion of ion implanted boron in preamorphized silicon KS Jones, LH Zhang, V Krishnamoorthy, M Law, DS Simons, P Chi, ... Applied physics letters 68 (19), 2672-2674, 1996 | 63 | 1996 |
| Isotopic analysis with the laser microprobe mass analyzer DS Simons International journal of mass spectrometry and ion processes 55 (1), 15-30, 1983 | 61 | 1983 |
| Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions N Jin, SY Chung, AT Rice, PR Berger, PE Thompson, C Rivas, R Lake, ... IEEE Transactions on Electron Devices 50 (9), 1876-1884, 2003 | 60 | 2003 |
| Determination of uranium and thorium concentrations in soils: a comparison of isotope dilution-secondary ion mass spectrometry and isotope dilution-thermal ionization mass … AG Adriaens, JD Fassett, WR Kelly, DS Simons, FC Adams Analytical Chemistry 64 (23), 2945-2950, 1992 | 55 | 1992 |
| Instrumental neutron activation analysis for certification of ion-implanted arsenic in silicon RR Greenberg, RM Lindstrom, DS Simons Journal of Radioanalytical and Nuclear Chemistry 245, 57-63, 2000 | 48 | 2000 |
| Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy PE Thompson, KD Hobart, ME Twigg, GG Jernigan, TE Dillon, ... Applied physics letters 75 (9), 1308-1310, 1999 | 43 | 1999 |
| Quantitative surface analysis of Fe Ni alloy films by XPS, AES and SIMS KJ Kim, DW Moon, CJ Park, D Simons, G Gillen, H Jin, HJ Kang Surface and Interface Analysis: An International Journal devoted to the …, 2007 | 39 | 2007 |
| Review of secondary ion mass spectrometry characterization of contamination associated with ion implantation FA Stevie, RG Wilson, DS Simons, MI Current, PC Zalm Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 39 | 1994 |
| Elevated temperature nitrogen implants in 6H-SiC J Gaedner, MV Rao, OW Holland, G Kelner, DS Simons, PH Chi, ... Journal of electronic materials 25, 885-892, 1996 | 34 | 1996 |
