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P.A. Stolk
P.A. Stolk
Ampleon, Netherlands
Verified email at caiway.nl - Homepage
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Cited by
Year
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ...
Journal of Applied Physics 81 (9), 6031-6050, 1997
8951997
Implantation and transient B diffusion in Si: The source of the interstitials
DJ Eaglesham, PA Stolk, HJ Gossmann, JM Poate
Applied Physics Letters 65 (18), 2305-2307, 1994
7111994
Modeling statistical dopant fluctuations in MOS transistors
PA Stolk, FP Widdershoven, DBM Klaassen
IEEE Transactions on Electron devices 45 (9), 1960-1971, 1998
5361998
Energetics of self-interstitial clusters in Si
NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, ...
Physical Review Letters 82 (22), 4460, 1999
4041999
Transient enhanced diffusion of boron in Si
SC Jain, W Schoenmaker, R Lindsay, PA Stolk, S Decoutere, M Willander, ...
Journal of applied physics 91 (11), 8919-8941, 2002
2902002
Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion
PA Stolk, DJ Eaglesham, HJ Gossmann, JM Poate
Applied physics letters 66 (11), 1370-1372, 1995
2711995
Trap‐limited interstitial diffusion and enhanced boron clustering in silicon
PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, JM Poate, ...
Applied physics letters 66 (5), 568-570, 1995
1671995
Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby
DJ Eaglesham, HJL Gossmann, JM Poate, PA Stolk
US Patent 5,731,626, 1998
1511998
Process for controlling dopant diffusion in a semiconductor layer
DJ Eaglesham, HJL Gossmann, JM Poate, PA Stolk
US Patent 6,043,139, 2000
1342000
Implantation and transient boron diffusion: the role of the silicon self-interstitial
PA Stolk, HJ Gossmann, DJ Eaglesham, JM Poate
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
1261995
Implant damage and transient enhanced diffusion in Si
DJ Eaglesham, PA Stolk, HJ Gossmann, TE Haynes, JM Poate
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
1241995
Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon
TE Haynes, DJ Eaglesham, PA Stolk, HJ Gossmann, DC Jacobson, ...
Applied physics letters 69 (10), 1376-1378, 1996
1131996
The interstitial fraction of diffusivity of common dopants in Si
HJ Gossmann, TE Haynes, PA Stolk, DC Jacobson, GH Gilmer, JM Poate, ...
Applied physics letters 71 (26), 3862-3864, 1997
1041997
The effect of statistical dopant fluctuations on MOS device performance
PA Stolk, DBM Klaassen
International Electron Devices Meeting. Technical Digest, 627-630, 1996
981996
Hydrogen solubility and network stability in amorphous silicon
S Acco, DL Williamson, PA Stolk, FW Saris, MJ Van den Boogaard, ...
Physical Review B 53 (8), 4415, 1996
971996
Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon
PA Stolk, FW Saris, AJM Berntsen, WF Weg, LT Sealy, RC Barklie, G Krötz, ...
Journal of applied physics 75 (11), 7266-7286, 1994
971994
On the nanostructure of pure amorphous silicon
DL Williamson, S Roorda, M Chicoine, R Tabti, PA Stolk, S Acco, ...
Applied Physics Letters 67 (2), 226-228, 1995
901995
Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors
HP Tuinhout, AH Montree, J Schmitz, PA Stolk
International Electron Devices Meeting. IEDM Technical Digest, 631-634, 1997
891997
Iron gettering mechanisms in silicon
JL Benton, PA Stolk, DJ Eaglesham, DC Jacobson, JY Cheng, JM Poate, ...
Journal of applied physics 80 (6), 3275-3284, 1996
831996
CMOS device optimization for mixed-signal technologies
PA Stolk, HP Tuinhout, R Duffy, E Augendre, LP Bellefroid, MJB Bolt, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
722001
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