Direct and indirect band-to-band tunneling in germanium-based TFETs KH Kao, AS Verhulst, WG Vandenberghe, B Soree, G Groeseneken, ...
IEEE Transactions on Electron Devices 59 (2), 292-301, 2011
467 2011 Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken
Journal of Applied Physics 107 (2), 2010
275 2010 Optimization of gate-on-source-only tunnel FETs with counter-doped pockets KH Kao, AS Verhulst, WG Vandenberghe, B Soree, W Magnus, D Leonelli, ...
IEEE Transactions on Electron Devices 59 (8), 2070-2077, 2012
148 2012 Figure of merit for and identification of sub-60 mV/decade devices WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ...
Applied Physics Letters 102 (1), 2013
129 2013 Impact of field-induced quantum confinement in tunneling field-effect devices WG Vandenberghe, B Sorée, W Magnus, G Groeseneken, MV Fischetti
Applied Physics Letters 98 (14), 2011
121 2011 Analytical model for point and line tunneling in a tunnel field-effect transistor W Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
2008 international conference on simulation of semiconductor processes and …, 2008
118 2008 Analytical model for a tunnel field-effect transistor WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008
114 2008 Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode B Sorée, W Magnus, G Pourtois
Journal of computational electronics 7, 380-383, 2008
111 2008 Tuning the Fermi Level of SiO2 -Supported Single-Layer Graphene by Thermal Annealing A Nourbakhsh, M Cantoro, A Klekachev, F Clemente, B Soree, ...
The Journal of Physical Chemistry C 114 (15), 6894-6900, 2010
104 2010 Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
82 2011 Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach W Vandenberghe, B Sorée, W Magnus, MV Fischetti
Journal of Applied Physics 109 (12), 2011
65 2011 Nanoscale domain wall devices with magnetic tunnel junction read and write E Raymenants, O Bultynck, D Wan, T Devolder, K Garello, L Souriau, ...
Nature Electronics 4 (6), 392-398, 2021
62 2021 Design and benchmarking of hybrid CMOS-spin wave device circuits compared to 10nm CMOS O Zografos, B Sorée, A Vaysset, S Cosemans, L Amaru, PE Gaillardon, ...
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 686-689, 2015
61 2015 InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ...
Journal of Applied Physics 115 (18), 2014
58 2014 Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe
npj 2D Materials and Applications 5 (1), 54, 2021
56 2021 Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers Y Zhang, MV Fischetti, B Sorée, W Magnus, M Heyns, M Meuris
Journal of applied physics 106 (8), 2009
52 2009 Temperature-dependent modeling and characterization of through-silicon via capacitance G Katti, M Stucchi, D Velenis, B Soree, K De Meyer, W Dehaene
IEEE Electron Device Letters 32 (4), 563-565, 2011
49 2011 A model determining optimal doping concentration and material’s band gap of tunnel field-effect transistors WG Vandenberghe, AS Verhulst, KH Kao, KD Meyer, B Sorée, W Magnus, ...
Applied Physics Letters 100 (19), 2012
47 2012 Critical behavior of the ferromagnets S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe
Physical Review B 103 (1), 014432, 2021
40 2021 Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics TP O’Regan, MV Fischetti, B Sorée, S Jin, W Magnus, M Meuris
Journal of Applied Physics 108 (10), 2010
40 2010 
William VandenbergheAssociate Professor at U.T. Dallas, dept. Materials Science & EngineeringGeverifieerd e-mailadres voor utdallas.edu
