| On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations H Sellier, B Hackens, MG Pala, F Martins, S Baltazar, X Wallart, ... Semiconductor science and technology 26 (6), 064008, 2011 | 94 | 2011 |
| Imaging Coulomb islands in a quantum Hall interferometer B Hackens, F Martins, S Faniel, CA Dutu, H Sellier, S Huant, M Pala, ... Nature communications 1 (1), 39, 2010 | 70 | 2010 |
| Terahertz frequency difference from vertically integrated low-temperature-grown GaAs photodetector E Peytavit, S Arscott, D Lippens, G Mouret, S Matton, P Masselin, ... Applied Physics Letters 81 (7), 1174-1176, 2002 | 68 | 2002 |
| Transport inefficiency in branched-out mesoscopic networks: An analog of the Braess paradox MG Pala, S Baltazar, P Liu, H Sellier, B Hackens, F Martins, V Bayot, ... Physical review letters 108 (7), 076802, 2012 | 67 | 2012 |
| Integrated terahertz TEM horn antenna E Peytavit, JF Lampin, T Akalin, L Desplanque Electronics Letters 43 (2), 1, 2007 | 67 | 2007 |
| Detection of picosecond electrical pulses using the intrinsic Franz–Keldysh effect JF Lampin, L Desplanque, F Mollot Applied Physics Letters 78 (26), 4103-4105, 2001 | 67 | 2001 |
| Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness Y Wang, P Ruterana, L Desplanque, S El Kazzi, X Wallart Journal of Applied Physics 109 (2), 2011 | 56 | 2011 |
| Terahertz detection in zero-bias InAs self-switching diodes at room temperature A Westlund, P Sangaré, G Ducournau, PÅ Nilsson, C Gaquiere, ... Applied Physics Letters 103 (13), 2013 | 52 | 2013 |
| Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs L Desplanque, JF Lampin, F Mollot Applied physics letters 84 (12), 2049-2051, 2004 | 51 | 2004 |
| Electrical characterization and small-signal modeling of InAs/AlSb HEMTs for low-noise and high-frequency applications M Malmkvist, E Lefebvre, M Borg, L Desplanque, X Wallart, G Dambrine, ... IEEE transactions on microwave theory and techniques 56 (12), 2685-2691, 2008 | 42 | 2008 |
| Experimental evidence of backward waves on terahertz left-handed transmission lines T Crépin, JF Lampin, T Decoopman, X Mélique, L Desplanque, D Lippens Applied Physics Letters 87 (10), 2005 | 41 | 2005 |
| Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement M Fahed, L Desplanque, D Troadec, G Patriarche, X Wallart Nanotechnology 27 (50), 505301, 2016 | 39 | 2016 |
| Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer L Desplanque, S El Kazzi, C Coinon, S Ziegler, B Kunert, A Beyer, K Volz, ... Applied Physics Letters 101 (14), 2012 | 37 | 2012 |
| High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates L Desplanque, D Vignaud, X Wallart Journal of crystal growth 301, 194-198, 2007 | 36 | 2007 |
| Cryogenic InAs/AlSb HEMT wideband low-noise IF amplifier for ultra-low-power applications G Moschetti, N Wadefalk, PÅ Nilsson, M Abbasi, L Desplanque, X Wallart, ... IEEE microwave and wireless components letters 22 (3), 144-146, 2012 | 33 | 2012 |
| Coherent tunnelling across a quantum point contact in the quantum Hall regime F Martins, S Faniel, B Rosenow, H Sellier, S Huant, MG Pala, ... Scientific reports 3 (1), 1416, 2013 | 32 | 2013 |
| Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy L Desplanque, M Fahed, X Han, VK Chinni, D Troadec, MP Chauvat, ... Nanotechnology 25 (46), 465302, 2014 | 29 | 2014 |
| The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism Y Wang, P Ruterana, S Kret, S El Kazzi, L Desplanque, X Wallart Applied Physics Letters 102 (5), 2013 | 27 | 2013 |
| Gate-recess technology for InAs/AlSb HEMTs E Lefebvre, M Malmkvist, M Borg, L Desplanque, X Wallart, G Dambrine, ... IEEE transactions on electron devices 56 (9), 1904-1911, 2009 | 26 | 2009 |
| In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate L Desplanque, A Bucamp, D Troadec, G Patriarche, X Wallart Nanotechnology 29 (30), 305705, 2018 | 25 | 2018 |
