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Kevin Leedy
Kevin Leedy
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Cited by
Cited by
Year
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped-Ga2O3MOSFETs
AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...
IEEE Electron Device Letters 37 (7), 902-905, 2016
5222016
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
KD Chabak, N Moser, AJ Green, DE Walker Jr, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 213501, 2016
3192016
-Ga2O3 MOSFETs for Radio Frequency Operation
AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
2522017
Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO
DC Look, KD Leedy, L Vines, BG Svensson, A Zubiaga, F Tuomisto, ...
Physical Review B 84 (11), 115202, 2011
2102011
Ge-Doped -Ga2O3 MOSFETs
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
1692017
Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs
KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ...
IEEE Electron device letters 39 (1), 67-70, 2017
1672017
Selecting metal alloy electric contact materials for MEMS switches
RA Coutu Jr, PE Kladitis, KD Leedy, RL Crane
Journal of Micromechanics and Microengineering 14 (8), 1157, 2004
1662004
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ...
Applied Physics Letters 111 (1), 012103, 2017
1352017
Contact resistance study of noble metals and alloy films using a scanning probe microscope test station
L Chen, H Lee, ZJ Guo, NE McGruer, KW Gilbert, S Mall, KD Leedy, ...
Journal of applied physics 102 (7), 074910, 2007
1272007
Characterization of metal and metal alloy films as contact materials in MEMS switches
H Lee, RA Coutu, S Mall, KD Leedy
Journal of Micromechanics and Microengineering 16 (3), 557, 2006
1222006
Microwave ZnO thin-film transistors
B Bayraktaroglu, K Leedy, R Neidhard
IEEE Electron Device Letters 29 (9), 1024-1026, 2008
1202008
Mobility analysis of highly conducting thin films: Application to ZnO
DC Look, KD Leedy, DH Tomich, B Bayraktaroglu
Applied Physics Letters 96 (6), 062102, 2010
1082010
Flyweight, superelastic, electrically conductive, and flame‐retardant 3D multi‐nanolayer graphene/ceramic metamaterial
Q Zhang, D Lin, B Deng, X Xu, Q Nian, S Jin, KD Leedy, H Li, GJ Cheng
Advanced materials 29 (28), 1605506, 2017
932017
High temperature stability of postgrowth annealed transparent and conductive ZnO: Al films
B Bayraktaroglu, K Leedy, R Bedford
Applied Physics Letters 93 (2), 022104, 2008
812008
High-frequency ZnO thin-film transistors on Si substrates
B Bayraktaroglu, K Leedy, R Neidhard
IEEE Electron Device Letters 30 (9), 946-948, 2009
792009
Optical and electrical properties of ultra-thin indium tin oxide nanofilms on silicon for infrared photonics
JW Cleary, EM Smith, KD Leedy, G Grzybowski, J Guo
Optical Materials Express 8 (5), 1231-1245, 2018
762018
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ...
Applied Physics Letters 110 (14), 143505, 2017
752017
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
712019
Coupling of epsilon-near-zero mode to gap plasmon mode for flat-top wideband perfect light absorption
JR Hendrickson, S Vangala, C Dass, R Gibson, J Goldsmith, K Leedy, ...
ACS Photonics 5 (3), 776-781, 2018
702018
Alternative dielectric films for rf MEMS capacitive switches deposited using atomic layer deposited Al2O3/ZnO alloys
CF Herrmann, FW DelRio, DC Miller, SM George, VM Bright, JL Ebel, ...
Sensors and Actuators A: Physical 135 (1), 262-272, 2007
702007
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