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Kim Reid
Kim Reid
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Verified email at ireid.com
Title
Cited by
Cited by
Year
In-situ atomic layer deposition
A Dip, S Sasaki, M Toeller, K Reid
US Patent App. 11/462,234, 2007
4572007
In-situ atomic layer deposition
A Dip, S Sasaki, M Toeller, K Reid
US Patent App. 11/462,234, 2007
4572007
In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
KG Reid, A Dip
US Patent 7,816,278, 2010
4212010
A high performance 1.8 V, 0.20/spl mu/m CMOS technology with copper metallization
S Venkatesan, AV Gelatos, S Hisra, B Smith, R Islam, J Cope, B Wilson, ...
International Electron Devices Meeting. IEDM Technical Digest, 769-772, 1997
3231997
Low-temperature dielectric film formation by chemical vapor deposition
A Dip, KG Reid
US Patent 7,994,070, 2011
3022011
Low-temperature dielectric film formation by chemical vapor deposition
A Dip, KG Reid
US Patent 7,994,070, 2011
3022011
Fabrication and operation of correlated electron material devices
CAP de ARAUJO, JB Celinska, KG Reid, L Shifren
1972018
Growth and surface chemistry of oxynitride gate dielectric using nitric oxide
RI Hegde, PJ Tobin, KG Reid, B Maiti, SA Ajuria
Applied physics letters 66 (21), 2882-2884, 1995
1861995
Furnace grown gate oxynitride using nitric oxide (NO)
Y Okada, PJ Tobin, KG Reid, RI Hegde, B Maiti, SA Ajuria
IEEE transactions on electron devices 41 (9), 1608-1613, 1994
1201994
Atomic layer epitaxy of GaInP ordered alloy
BT McDermott, KG Reid, NA El‐Masry, SM Bedair, WM Duncan, X Yin, ...
Applied physics letters 56 (12), 1172-1174, 1990
861990
80 nm poly-Si gate CMOS with HfO_2 gate dielectric
C Hobbs
IEDM Technical Digest, 2001, 651-654, 2001
692001
Atomic layer epitaxy of h-BN (0001) multilayers on Co (0001) and molecular beam epitaxy growth of graphene on h-BN (0001)/Co (0001)
MS Driver, JD Beatty, O Olanipekun, K Reid, A Rath, PM Voyles, ...
Langmuir 32 (11), 2601-2607, 2016
662016
Fabrication of correlated electron material devices
KG Reid, CAP de Araujo, L Shifren
US Patent 9,627,615, 2017
622017
Formation of a metal-containing film by sequential gas exposure in a batch type processing system
A Dip, M Toeller, K Reid
US Patent App. 10/662,522, 2005
442005
Formation of a metal-containing film by sequential gas exposure in a batch type processing system
A Dip, M Toeller, K Reid
US Patent App. 10/662,522, 2005
442005
80 nm poly-Si gate CMOS with HfO/sub 2/gate dielectric
C Hobbs, H Tseng, K Reid, B Taylor, L Dip, L Hebert, R Garcia, R Hegde, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
36*2001
Barrier layer for correlated electron material
KG Reid, L Shifren, CAP de Araujo
US Patent 9,660,189, 2017
352017
IEEE Trans. Electron Devices
Y Okada, PJ Tobin, KG Reid, RI Hegde, B Maiti, SA Ajuria
IEEE Trans. Electron Devices 41, 191, 1994
321994
Role of trimethylgallium exposure time in carbon doping and high temperature atomic layer epitaxy of GaAs
KG Reid, HM Urdianyk, SM Bedair
Applied physics letters 59 (19), 2397-2399, 1991
321991
High performance 20/spl Aring/NO oxynitride for gate dielectric in deep subquarter micron CMOS technology
B Maiti, PJ Tobin, V Misra, RI Hegde, KG Reid, C Gelatos
International Electron Devices Meeting. IEDM Technical Digest, 651-654, 1997
301997
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