| Speaker identification using mel frequency cepstral coefficients MR Hasan, M Jamil, M Rahman variations 1 (4), 565-568, 2004 | 444 | 2004 |
| High-Performance Ge nMOSFETs With Junctions Formed by “Spin-On Dopant” M Jamil, J Mantey, EU Onyegam, GD Carpenter, E Tutuc, SK Banerjee IEEE electron device letters 32 (9), 1203-1205, 2011 | 62 | 2011 |
| High-Mobility TaN//Ge(111) n-MOSFETs With RTO-Grown Passivation Layer M Jamil, J Oh, M Ramon, S Kaur, P Majhi, E Tutuc, SK Banerjee IEEE electron device letters 31 (11), 1208-1210, 2010 | 20 | 2010 |
| Ferromagnetism in Mn-implanted epitaxially grown Ge on Si (100) S Guchhait, M Jamil, H Ohldag, A Mehta, E Arenholz, G Lian, A LiFatou, ... Physical Review B 84 (2), 024432, 2011 | 19 | 2011 |
| Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses J Oh, I Ok, CY Kang, M Jamil, SH Lee, WY Loh, J Huang, B Sassman, ... 2009 Symposium on VLSI Technology, 238-239, 2009 | 19 | 2009 |
| NNK, & Wardhana, A.(2021) M Hasan, AH Roslan, E Hendrayani, A Sudirman, M Jamil, ... Kewirausahaan. Media Sains Indonesia, 0 | 16 | |
| Speaker identification using mel frequency cepstral coefficients H MdRashidul, M Jamil, G Rabbani, S Rahman 3rd International Conference on Electrical & Computer Engineering ICECE 2004, 2004 | 5 | 2004 |
| Fullerene-Based Hybrid Devices for High-Density Nonvolatile Memory F Ferdousi, M Jamil, H Liu, S Kaur, D Ferrer, L Colombo, SK Banerjee IEEE transactions on nanotechnology 10 (3), 572-575, 2010 | 4 | 2010 |
| Effects of Si-cap thickness and temperature on device performance of Si/Ge1− xCx/Si p-MOSFETs M Jamil, ES Liu, F Ferdousi, JP Donnelly, E Tutuc, SK Banerjee Semiconductor science and technology 25 (4), 045005, 2010 | 4 | 2010 |
| Germanium and epitaxial Ge: C devices for CMOS extension and beyond M Jamil | 3 | 2011 |
| The influence of occupational safety and health program on the manpower performance of construction company in Banda Aceh city M Jamil, F Maulina, M Hasan IOP Conference Series: Materials Science and Engineering 933 (1), 012005, 2020 | 1 | 2020 |
| High-k dielectrics for Ge, III-V and graphene MOSFETs SK Banerjee, E Tutuc, S Kim, T Akyol, M Jamil, D Shahredji, J Donnelly, ... ECS Transactions 25 (6), 285, 2009 | 1 | 2009 |
| Ferromagnetism in Mn-implanted Ge and epitaxial GeC S Guchhait, J Markert, M Jamil, S Banerjee APS March Meeting Abstracts, J33. 001, 2008 | 1 | 2008 |
| Ferromagnetism in Mn-implanted Ge and epitaxial GeC S Guchhait, J Markert, M Jamil, S Banerjee APS March Meeting Abstracts, J33. 001, 2008 | 1 | 2008 |
| Chest Radiography in the Evaluation of Mitral Valvular Disease and it's Correlation with Echocardiography. H Sultana, MM Rahman, M Begum, RA Ferdousi, K Begum, MA Sangma, ... Mymensingh Medical Journal: MMJ 30 (2), 292-300, 2021 | | 2021 |
| Germanium nMOSFETs with GeO2 Passivation and n+/p Junctions Formed by Spin-On Dopants J Mantey, W Hsu, M Jamil, EU Onyegam, E Tutuc, SK Banerjee 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012 | | 2012 |
| High-Mobility TaN/Error! Bookmark not defined./Ge (111) n-MOSFETs With RTO-Grown Passivation Layer M Jamil, J Oh, M Ramon, S Kaur, P Majhi, E Tutuc, SK Banerjee IEEE ELECTRON DEVICE LETTERS 31 (11), 1208-1210, 2010 | | 2010 |
| Amorphous Structure and Stability of Mn Implanted GeC Ferromagnetic Semiconductor C Sun, HC Floresca, J Wang, M Jamil, S Guchhait, DA Ferrer, ... Microscopy and Microanalysis 15 (S2), 1216-1217, 2009 | | 2009 |
| Mn-implanted GeC: An Amorphous Ferromagnetic Material S Guchhait, M Jamil, D Ferrer, E Tutuc, J Markert, S Banerjee, A Li-Fatou, ... APS March Meeting Abstracts, X22. 013, 2009 | | 2009 |
| Ge1xCx Epitaxial Layers for CMOS Applications and Beyond M Jamil University of Texas at Austin, 2008 | | 2008 |
Emanuel TutucProfessor, The University of Texas at AustinVerified email at mer.utexas.edu
