Ali Teke
Ali Teke
Balıkesir Üniversitesinde Fizik Profesörü
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A comprehensive review of ZnO materials and devices
Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, ...
Journal of applied physics 98 (4), 11, 2005
Excitonic fine structure and recombination dynamics in single-crystalline
A Teke, Ü Özgür, S Doğan, X Gu, H Morkoç, B Nemeth, J Nause, ...
Physical Review B 70 (19), 195207, 2004
Buffer optimization for crack-free GaN epitaxial layers grown on Si (1 1 1) substrate by MOCVD
E Arslan, MK Ozturk, A Teke, S Ozcelik, E Ozbay
Journal of Physics D: Applied Physics 41 (15), 155317, 2008
Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films
Ü Özgür, A Teke, C Liu, SJ Cho, H Morkoç, HO Everitt
Applied Physics Letters 84 (17), 3223-3225, 2004
MA Resh chikov, S. Do an, V. Avrutin, SJ Cho, and H. Morkoç
Ü Özgür, YI Alivov, C Liu, A Teke
J. Appl. Phys 98 (041), 301, 2005
Alivov Ya I, Liu C, Teke A, Reshchikov MA, Doğan S, Avrutin V, Cho SJ, Morkoç H
Ü Özgur
J. Appl. Phys 98, 041301, 2005
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
R Tülek, A Ilgaz, S Gökden, A Teke, MK Öztürk, M Kasap, S Özçelik, ...
Journal of Applied Physics 105 (1), 013707, 2009
4H–SiC photoconductive switching devices for use in high-power applications
S Doǧan, A Teke, D Huang, H Morkoç, CB Roberts, J Parish, B Ganguly, ...
Applied physics letters 82 (18), 3107-3109, 2003
GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces
X Gu, MA Reshchikov, A Teke, D Johnstone, H Morkoc, B Nemeth, ...
Applied physics letters 84 (13), 2268-2270, 2004
The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures
A Teke, S Gökden, R Tülek, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ...
New Journal of Physics 11 (6), 063031, 2009
Cho SJ and Morkoc H
U Ozgur, YI Alivov, C Liu, A Teke, MA Reshchikov, S Dogan, V Avrutin
J. Appl. Phys. 2005, 98, 2005
MAR & S. Dogan, V. Avrutin, S.-J. Cho, HM A comprehensive review of ZnO materials and devices
Ü Özgür, YI Alivov, C Liu, A Teke
J. Appl. Phys 98, 11, 2005
Effect of thermal treatment on ZnO substrate for epitaxial growth
X Gu, S Sabuktagin, A Teke, D Johnstone, H Morkoç, B Nemeth, J Nause
Journal of Materials Science: Materials in Electronics 15 (6), 373-378, 2004
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
S Gökden, R Tülek, A Teke, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ...
Semiconductor science and technology 25 (4), 045024, 2010
GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors
A Teke, S Dogan, F Yun, MA Reshchikov, H Le, XQ Liu, H Morkoc, ...
Solid-State Electronics 47 (8), 1401-1408, 2003
Tunable wavelength hot electron light emitter
N Balkan, A Teke, R Gupta, A Straw, JH Wolter, W Van der Vleuten
Applied physics letters 67 (7), 935-937, 1995
The electrical, optical, and structural properties of GaN epitaxial layers grown on Si (111) substrate with SiNx interlayers
E Arslan, Ö Duygulu, AA Kaya, A Teke, S Özçelik, E Ozbay
Superlattices and Microstructures 46 (6), 846-857, 2009
In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
S Mazzucato, N Balkan, A Teke, A Erol, RJ Potter, MC Arikan, X Marie, ...
Journal of applied physics 93 (5), 2440-2448, 2003
Group III Nitrides
RA Ferreyra, C Zhu, A Teke, H Morkoç
Springer Handbook of Electronic and Photonic Materials, 1-1, 2017
A comprehensive review of ZnO and related devices
Ü Özgür, YI Alivov, C Liu, A Teke, M Reshchikov, S Doğan, V Avrutin
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