| Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018 | 398 | 2018 |
| Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017 | 325 | 2017 |
| Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan Applied physics letters 112 (23), 2018 | 183 | 2018 |
| -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055, 2019 | 166 | 2019 |
| Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ... Applied Physics Express 11 (3), 031101, 2018 | 160 | 2018 |
| Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ... IEEE Electron Device Letters 39 (4), 568-571, 2018 | 153 | 2018 |
| Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan IEEE Electron Device Letters 40 (8), 1241-1244, 2019 | 111 | 2019 |
| Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ... IEEE Electron Device Letters 39 (7), 1042-1045, 2018 | 106 | 2018 |
| Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ... IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019 | 97 | 2019 |
| Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ... Applied Physics Letters 113 (12), 2018 | 75 | 2018 |
| MBE-Grown-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107 AS Pratiyush, Z Xia, S Kumar, Y Zhang, C Joishi, R Muralidharan, S Rajan, ... IEEE Photonics Technology Letters 30 (23), 2025-2028, 2018 | 64 | 2018 |
| Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart Applied Physics Letters 115 (15), 2019 | 60 | 2019 |
| Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation C Joishi, Z Xia, JS Jamison, SH Sohel, RC Myers, S Lodha, S Rajan IEEE Transactions on Electron Devices 67 (11), 4813-4819, 2020 | 38 | 2020 |
| Enhanced n-type β-Ga2O3 (2¯ 01) gate stack performance using Al2O3/SiO2 bi-layer dielectric D Biswas, C Joishi, J Biswas, K Thakar, S Rajan, S Lodha Applied physics letters 114 (21), 2019 | 36 | 2019 |
| β-Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination S Dhara, NK Kalarickal, A Dheenan, C Joishi, S Rajan Applied Physics Letters 121 (20), 2022 | 32 | 2022 |
| Electrothermal Characteristics of Delta-Doped -Ga2O3 Metal–Semiconductor Field-Effect Transistors N Kumar, C Joishi, Z Xia, S Rajan, S Kumar IEEE Transactions on Electron Devices 66 (12), 5360-5366, 2019 | 25 | 2019 |
| β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching S Dhara, NK Kalarickal, A Dheenan, SI Rahman, C Joishi, S Rajan Applied Physics Letters 123 (2), 2023 | 16 | 2023 |
| Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations S Kothari, C Joishi, S Ghosh, D Biswas, D Vaidya, S Ganguly, S Lodha Applied Physics Express 9 (7), 071302, 2016 | 13 | 2016 |
| Nb2O5 high-k dielectric enabled electric field engineering of β-Ga2O3 metal–insulator–semiconductor (MIS) diode P Tiwari, J Biswas, C Joishi, S Lodha Journal of Applied Physics 130 (24), 2021 | 10 | 2021 |
| Ultrafast Thermoreflectance Imaging and Electrothermal Modeling of β-Ga2O3 MESFETs N Kumar, D Vaca, C Joishi, Z Xia, S Rajan, S Kumar IEEE Electron Device Letters 41 (4), 641-644, 2020 | 10 | 2020 |
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
