Emilis Šermukšnis
Emilis Šermukšnis
Center for Physical Sciences and Technology
Verified email at ftmc.lt
Title
Cited by
Cited by
Year
Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels
A Matulionis, J Liberis, E Šermukšnis, J Xie, JH Leach, M Wu, H Morkoç
Semiconductor science and technology 23 (7), 075048, 2008
562008
Ultrafast removal of LO-mode heat from a GaN-based two-dimensional channel
A Matulionis, J Liberis, I Matulioniene, M Ramonas, E Sermuksnis
Proceedings of the IEEE 98 (7), 1118-1126, 2009
522009
Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons
JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 95 (22), 223504, 2009
502009
Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels
A Matulionis, J Liberis, I Matulionienė, M Ramonas, E Šermukšnis, ...
Applied Physics Letters 95 (19), 192102, 2009
472009
Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates
JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 96 (13), 133505, 2010
402010
InAlN‐barrier HFETs with GaN and InGaN channels
J Liberis, I Matulionienė, A Matulionis, E Šermukšnis, J Xie, JH Leach, ...
physica status solidi (a) 206 (7), 1385-1395, 2009
312009
Hot-electron energy relaxation time in Ga-doped ZnO films
E Šermukšnis, J Liberis, M Ramonas, A Matulionis, M Toporkov, HY Liu, ...
Journal of Applied Physics 117 (6), 065704, 2015
242015
Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors
A Matulionis, J Liberis, I Matulionienė, E Šermukšnis, JH Leach, M Wu, ...
physica status solidi (a) 208 (1), 30-36, 2011
212011
Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels
L Ardaravičius, O Kiprijanovič, J Liberis, E Šermukšnis, A Matulionis, ...
Semiconductor Science and Technology 30 (10), 105016, 2015
152015
Window for better reliability of nitride heterostructure field effect transistors
A Matulionis, J Liberis, E Šermukšnis, L Ardaravičius, A Šimukovič, ...
Microelectronics Reliability 52 (9-10), 2149-2152, 2012
152012
Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density
E Šermukšnis, J Liberis, M Ramonas, A Matulionis, JH Leach, M Wu, ...
Applied Physics Letters 99 (4), 043501, 2011
152011
Hot-phonon lifetime in Al0. 23Ga0. 77N/GaN channels
J Liberis, M Ramonas, E Šermukšnis, P Sakalas, N Szabo, M Schuster, ...
Semiconductor Science and Technology 29 (4), 045018, 2014
122014
High-field electron transport in doped ZnO
L Ardaravičius, O Kiprijanovič, J Liberis, M Ramonas, E Šermukšnis, ...
Materials Research Express 4 (6), 066301, 2017
102017
Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel
JH Leach, M Wu, H Morkoç, J Liberis, E Šermukšnis, M Ramonas, ...
Journal of Applied Physics 110 (10), 104504, 2011
92011
Optical and electrical characteristics of InGaAsP MQW BH DFB laser diodes
J Matukas, V Palenskis, C Pavasaris, E Sermuksnis, J Vysniauskas, ...
Materials science forum 384, 91-94, 2002
82002
Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels
E Šermukšnis, J Liberis, A Matulionis, V Avrutin, R Ferreyra, Ü Özgür, ...
Semiconductor Science and Technology 30 (3), 035003, 2015
72015
High frequency noise of epitaxial graphene grown on sapphire
L Ardaravicius, J Liberis, E Šermukšnis, A Matulionis, J Hwang, JY Kwak, ...
physica status solidi (RRL)–Rapid Research Letters 7 (5), 348-351, 2013
62013
Hot-electron noise and energy relaxation in wurtzite ZnO
E Šermukšnis, J Liberis, A Matulionis, M Toporkov, V Avrutin, Ü Özgür, ...
2015 International Conference on Noise and Fluctuations (ICNF), 1-4, 2015
52015
Optimal 2 DEG Density for Plasmon‐Assisted Ultrafast Decay of Hot Phonons
E Šermukšnis, J Liberis, A Matulionis
AIP Conference Proceedings 1129 (1), 245-248, 2009
52009
Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation
L Ardaravičius, O Kiprijanovič, M Ramonas, E Šermukšnis, J Liberis, ...
Journal of Applied Physics 126 (18), 185703, 2019
42019
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