Md Rezaul Karim

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h-index	15	15
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Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUVerified email at osu.edu
Zixuan FengThe Ohio State UniversityVerified email at osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityVerified email at osu.edu
Menglin Zhu [ORCID: 0000-0001-683...Postdoctoral Researcher, MITVerified email at mit.edu
A F M Anhar Uddin BhuiyanAssistant Professor, Electrical and Computer Engineering, University of Massachusetts LowellVerified email at uml.edu
Jared M JohnsonThe Ohio State UniversityVerified email at thermofisher.com
Leonard BrillsonThe Ohio State UniversityVerified email at osu.edu
Kathleen KashProfessor of Physics, Case Western Reserve UniversityVerified email at case.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
Shreyas MuralidharanGraduate Student, Stanford UniversityVerified email at stanford.edu
David LookSenior Research Physicist, Wright State UniversityVerified email at wright.edu
Lei R. CaoProfessor, The Ohio State UniversityVerified email at osu.edu
Hsien-Lien Huang [ORCID:0000-0001...The Ohio State UniversityVerified email at osu.edu
Baishakhi MazumderUniversity at BuffaloVerified email at buffalo.edu
Yuxuan ZhangFinwave Semiconductor Inc.Verified email at finwavesemi.com
Shanthi Iyer alias E.ShanthiProfessor, Nanoengineering, Joint School of Nanoscience and NanoengineeringVerified email at ncat.edu
Jith SarkerUniversity at Buffalo - The State University of New YorkVerified email at buffalo.edu
Walter LambrechtPerkins Professor of Physics, Case Western Reserve UniversityVerified email at case.edu
Estiak AhmadIntel CorporationVerified email at intel.com
Yang Liu3MVerified email at mmm.com

Md Rezaul Karim

Intel Corporation

Verified email at osu.edu

II-IV-nitrides III-nitrides oxide semiconductors thin film and nanowire growth LEDs


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MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 2019	263	2019
Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 2018	138	2018
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao Applied Physics Letters 112 (5), 2018	114	2018
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020	109	2020
High-temperature low-pressure chemical vapor deposition of β-Ga2O3 Y Zhang, Z Feng, MR Karim, H Zhao Journal of Vacuum Science & Technology A 38 (5), 2020	47	2020
Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters Z Feng, MR Karim, H Zhao APL Materials 7 (2), 2019	46	2019
A two-step growth pathway for high Sb incorporation in GaAsSb nanowires in the telecommunication wavelength range E Ahmad, MR Karim, SB Hafiz, CL Reynolds, Y Liu, S Iyer Scientific reports 7 (1), 10111, 2017	44	2017
Deep level defects and cation sublattice disorder in ZnGeN2 MS Haseman, MR Karim, D Ramdin, BA Noesges, E Feinberg, ... Journal of Applied Physics 127 (13), 2020	28	2020
Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Y Zhang, Z Chen, W Li, H Lee, MR Karim, AR Arehart, SA Ringel, S Rajan, ... Journal of Applied Physics 127 (21), 2020	27	2020
Metal–Organic Chemical Vapor Deposition Growth of ZnGeN₂ Films on Sapphire MR Karim, BHD Jayatunga, Z Feng, K Kash, H Zhao Crystal Growth & Design 19 (8), 4661-4666, 2019	27	2019
Te incorporation in GaAs1− xSbx nanowires and pin axial structure E Ahmad, PK Kasanaboina, MR Karim, M Sharma, CL Reynolds, Y Liu, ... Semiconductor Science and Technology 31 (12), 125001, 2016	27	2016
Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In₂O₃ Films MR Karim, Z Feng, H Zhao Crystal Growth & Design 18 (8), 4495-4502, 2018	26	2018
Pitch-Induced bandgap tuning in self-catalyzed growth of patterned GaAsSb axial and GaAs/GaAsSb core–shell nanowires using molecular beam epitaxy M Sharma, MR Karim, P Kasanaboina, J Li, S Iyer Crystal Growth & Design 17 (2), 730-737, 2017	25	2017
Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes MR Karim, H Zhao Journal of applied physics 124 (3), 2018	20	2018
Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition MR Karim, Z Chen, Z Feng, HL Huang, JM Johnson, MJ Tadjer, J Hwang, ... Journal of Vacuum Science & Technology A 39 (2), 2021	16	2021
Neutron irradiation and forming gas anneal impact on β-Ga2O3 deep level defects H Gao, S Muralidharan, MR Karim, SM White, LR Cao, K Leedy, H Zhao, ... Journal of Physics D: Applied Physics 53 (46), 465102, 2020	15	2020
-Ga₂O₃NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection XQ Zheng, J Lee, S Rafique, MR Karim, L Han, H Zhao, CA Zorman, ... IEEE Electron Device Letters 39 (8), 1230-1233, 2018	15	2018
Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition MR Karim, BHD Jayatunga, M Zhu, RA Lalk, O Licata, B Mazumder, ... AIP Advances 10 (6), 2020	14	2020
Low-Pressure Chemical Vapor Deposition of In₂O₃ Films on Off-Axis c-Sapphire Substrates MR Karim, Z Feng, JM Johnson, M Zhu, J Hwang, H Zhao Crystal Growth & Design 19 (3), 1965-1972, 2019	13	2019
Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films’”[APL Mater. 8, 089101 (2020)] AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (8), 2020	12	2020

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