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Md Rezaul Karim
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MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao
Applied Physics Letters 114 (25), 250601, 2019
1862019
Optical signatures of deep level defects in Ga2O3
H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ...
Applied Physics Letters 112 (24), 242102, 2018
1152018
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates
S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao
Applied Physics Letters 112 (5), 052104, 2018
892018
Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films
AFMAU Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (3), 031104, 2020
642020
A two-step growth pathway for high Sb incorporation in GaAsSb nanowires in the telecommunication wavelength range
E Ahmad, MR Karim, SB Hafiz, CL Reynolds, Y Liu, S Iyer
Scientific reports 7 (1), 1-12, 2017
372017
Low pressure chemical vapor deposition of -Ga2O3 thin films: Dependence on growth parameters
Z Feng, MR Karim, H Zhao
APL Materials 7 (2), 022514, 2019
362019
High-temperature low-pressure chemical vapor deposition of β-Ga2O3
Y Zhang, Z Feng, MR Karim, H Zhao
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 38 (5 …, 2020
312020
Deep level defects and cation sublattice disorder in ZnGeN2
MS Haseman, MR Karim, D Ramdin, BA Noesges, E Feinberg, ...
Journal of Applied Physics 127 (13), 135703, 2020
232020
Te incorporation in GaAs1− xSbx nanowires and pin axial structure
E Ahmad, PK Kasanaboina, MR Karim, M Sharma, CL Reynolds, Y Liu, ...
Semiconductor Science and Technology 31 (12), 125001, 2016
232016
Metal–Organic Chemical Vapor Deposition Growth of ZnGeN2 Films on Sapphire
MR Karim, BHD Jayatunga, Z Feng, K Kash, H Zhao
Crystal Growth & Design 19 (8), 4661-4666, 2019
222019
Pitch-Induced bandgap tuning in self-catalyzed growth of patterned GaAsSb axial and GaAs/GaAsSb core–shell nanowires using molecular beam epitaxy
M Sharma, MR Karim, P Kasanaboina, J Li, S Iyer
Crystal Growth & Design 17 (2), 730-737, 2017
222017
Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In2O3 Films
MR Karim, Z Feng, H Zhao
Crystal Growth & Design 18 (8), 4495-4502, 2018
212018
Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
Y Zhang, Z Chen, W Li, H Lee, MR Karim, AR Arehart, SA Ringel, S Rajan, ...
Journal of Applied Physics 127 (21), 215707, 2020
162020
-Ga2O3NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection
XQ Zheng, J Lee, S Rafique, MR Karim, L Han, H Zhao, CA Zorman, ...
IEEE Electron Device Letters 39 (8), 1230-1233, 2018
152018
Neutron irradiation and forming gas anneal impact on β-Ga2O3 deep level defects
H Gao, S Muralidharan, MR Karim, SM White, LR Cao, K Leedy, H Zhao, ...
Journal of Physics D: Applied Physics 53 (46), 465102, 2020
132020
Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes
MR Karim, H Zhao
Journal of Applied Physics 124 (3), 034303, 2018
122018
Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films’” [APL Mater. 8, 089101 (2020)]
AFMAU Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (8), 089102, 2020
102020
Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition
MR Karim, BHD Jayatunga, M Zhu, RA Lalk, O Licata, B Mazumder, ...
AIP Advances 10 (6), 065302, 2020
102020
Metal–Organic Chemical Vapor Deposition of ZnGeGa2N4
BHD Jayatunga, MR Karim, RA Lalk, O Ohanaka, WRL Lambrecht, ...
Crystal Growth & Design 20 (1), 189-196, 2019
102019
Ultrafast growth rate and high mobility In2O3 films grown on c-sapphire via low pressure chemical vapor deposition
Y Zhang, MR Karim, Z Feng, H Zhao
Journal of Applied Physics 125 (13), 135703, 2019
102019
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