Shin Mou
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Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 173502, 2018
Donors and deep acceptors in β-Ga2O3
AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 062101, 2018
Ge-Doped -Ga2O3 MOSFETs
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao
Applied Physics Letters 109 (13), 132103, 2016
Single defect light-emitting diode in a van der Waals heterostructure
G Clark, JR Schaibley, J Ross, T Taniguchi, K Watanabe, JR Hendrickson, ...
Nano letters 16 (6), 3944-3948, 2016
Incomplete ionization of a 110 meV unintentional donor in β-Ga2O3 and its effect on power devices
AT Neal, S Mou, R Lopez, JV Li, DB Thomson, KD Chabak, GH Jessen
Scientific reports 7 (1), 1-7, 2017
Towards High‐Mobility Heteroepitaxial β‐Ga2O3 on Sapphire − Dependence on The Substrate Off‐Axis Angle
S Rafique, L Han, AT Neal, S Mou, J Boeckl, H Zhao
physica status solidi (a) 215 (2), 1700467, 2018
Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect
PF Qiao, S Mou, SL Chuang
Optics express 20 (3), 2319-2334, 2012
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
Midinfrared type-II superlattice photodiodes toward room temperature operation
JV Li, CJ Hill, J Mumolo, S Gunapala, S Mou, SL Chuang
Applied Physics Letters 93 (16), 163505, 2008
P-type conduction in two-dimensional MoS2 via oxygen incorporation
AT Neal, R Pachter, S Mou
Applied Physics Letters 110 (19), 193103, 2017
Theoretical analysis of the combined effects of sulfur vacancies and analyte adsorption on the electronic properties of single-layer MoS2
B Akdim, R Pachter, S Mou
Nanotechnology 27 (18), 185701, 2016
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
G Seryogin, F Alema, N Valente, H Fu, E Steinbrunner, AT Neal, S Mou, ...
Applied Physics Letters 117 (26), 262101, 2020
Temperature and doping concentration dependence of the energy band gap in β-Ga2O3 thin films grown on sapphire
S Rafique, L Han, S Mou, H Zhao
Optical Materials Express 7 (10), 3561-3570, 2017
Superhydrophobicity of hierarchical ZnO nanowire coatings
M Gong, Z Yang, X Xu, D Jasion, S Mou, H Zhang, Y Long, S Ren
Journal of Materials Chemistry A 2 (17), 6180-6184, 2014
β-Gallium oxide power electronics
AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
APL Materials 10 (2), 029201, 2022
Metalorganic chemical vapor deposition growth of high-quality type II superlattices on (001) GaAs substrates
XB Zhang, JH Ryou, RD Dupuis, A Petschke, S Mou, SL Chuang, C Xu, ...
Applied Physics Letters 88 (7), 072104, 2006
Improved surface and structural properties of superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces
XB Zhang, JH Ryou, RD Dupuis, C Xu, S Mou, A Petschke, KC Hsieh, ...
Applied Physics Letters 90 (13), 131110, 2007
Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donor
CA Lenyk, NC Giles, EM Scherrer, BE Kananen, LE Halliburton, ...
Journal of Applied Physics 125 (4), 045703, 2019
Surface channel current in type-II superlattice photodiodes
S Mou, JV Li, SL Chuang
Journal of Applied Physics 102 (6), 066103, 2007
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