Shin Mou
Cited by
Cited by
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
Donors and deep acceptors in β-Ga2O3
AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 2018
Ge-Doped -Ga2O3 MOSFETs
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
β-Gallium oxide power electronics
AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
Apl Materials 10 (2), 2022
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao
Applied Physics Letters 109 (13), 2016
Single defect light-emitting diode in a van der Waals heterostructure
G Clark, JR Schaibley, J Ross, T Taniguchi, K Watanabe, JR Hendrickson, ...
Nano letters 16 (6), 3944-3948, 2016
Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices
AT Neal, S Mou, R Lopez, JV Li, DB Thomson, KD Chabak, GH Jessen
Scientific reports 7 (1), 13218, 2017
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
Towards High‐Mobility Heteroepitaxial β‐Ga2O3 on Sapphire − Dependence on The Substrate Off‐Axis Angle
S Rafique, L Han, AT Neal, S Mou, J Boeckl, H Zhao
physica status solidi (a) 215 (2), 1700467, 2018
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
G Seryogin, F Alema, N Valente, H Fu, E Steinbrunner, AT Neal, S Mou, ...
Applied Physics Letters 117 (26), 2020
Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect
PF Qiao, S Mou, SL Chuang
Optics express 20 (3), 2319-2334, 2012
P-type conduction in two-dimensional MoS2 via oxygen incorporation
AT Neal, R Pachter, S Mou
Applied Physics Letters 110 (19), 2017
Theoretical analysis of the combined effects of sulfur vacancies and analyte adsorption on the electronic properties of single-layer MoS2
B Akdim, R Pachter, S Mou
Nanotechnology 27 (18), 185701, 2016
Temperature and doping concentration dependence of the energy band gap in β-Ga2O3 thin films grown on sapphire
S Rafique, L Han, S Mou, H Zhao
Optical Materials Express 7 (10), 3561-3570, 2017
Midinfrared type-II InAs∕ GaSb superlattice photodiodes toward room temperature operation
JV Li, CJ Hill, J Mumolo, S Gunapala, S Mou, SL Chuang
Applied Physics Letters 93 (16), 2008
Metalorganic chemical vapor deposition growth of high-quality InAs∕ GaSb type II superlattices on (001) GaAs substrates
XB Zhang, JH Ryou, RD Dupuis, A Petschke, S Mou, SL Chuang, C Xu, ...
Applied Physics Letters 88 (7), 2006
Superhydrophobicity of hierarchical ZnO nanowire coatings
M Gong, Z Yang, X Xu, D Jasion, S Mou, H Zhang, Y Long, S Ren
Journal of Materials Chemistry A 2 (17), 6180-6184, 2014
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy
P Vogt, FVE Hensling, K Azizie, CS Chang, D Turner, J Park, ...
Apl Materials 9 (3), 2021
Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donor
CA Lenyk, NC Giles, EM Scherrer, BE Kananen, LE Halliburton, ...
Journal of Applied Physics 125 (4), 2019
Toward realization of Ga2O3for power electronics applications
G Jessen, K Chabak, A Green, J McCandless, S Tetlak, K Leedy, R Fitch, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
The system can't perform the operation now. Try again later.
Articles 1–20