| Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT JS Moon, B Grabar, J Wong, D Chuong, E Arkun, DV Morales, P Chen, ... IEEE Electron Device Letters 42 (6), 796-799, 2021 | 56 | 2021 |
| 360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications JS Moon, J Wong, B Grabar, M Antcliffe, P Chen, E Arkun, I Khalaf, ... IEEE Electron Device Letters 41 (8), 1173-1176, 2020 | 55 | 2020 |
| InGaAs channel MOSFET with self‐aligned source/drain MBE regrowth technology U Singisetti, MA Wistey, GJ Burek, E Arkun, AK Baraskar, Y Sun, ... physica status solidi c 6 (6), 1394-1398, 2009 | 55 | 2009 |
| Structural and thermal properties of single crystalline epitaxial Gd2O3 and Er2O3 grown on Si (111) R Dargis, D Williams, R Smith, E Arkun, R Roucka, A Clark, M Lebby ECS Journal of Solid State Science and Technology 1 (2), N24, 2012 | 39 | 2012 |
| Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio H Shin, E Arkun, DB Thomson, P Miraglia, E Preble, R Schlesser, ... Journal of crystal growth 236 (4), 529-537, 2002 | 32 | 2002 |
| High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency> 70% at 30 GHz JS Moon, R Grabar, J Wong, M Antcliffe, P Chen, E Arkun, I Khalaf, ... Electronics Letters 56 (13), 678-680, 2020 | 29 | 2020 |
| Novel high-speed linear GaN technology with high efficiency J Moon, J Wong, B Grabar, M Antcliffe, P Chen, E Arkun, I Khalaf, ... 2019 IEEE MTT-S International Microwave Symposium (IMS), 1130-1132, 2019 | 28 | 2019 |
| REO gate dielectric for III-N device on Si substrate R Dargis, R Smith, A Clark, E Arkun, M Lebby US Patent 8,878,188, 2014 | 26 | 2014 |
| W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz JS Moon, B Grabar, J Wong, C Dao, E Arkun, H Tai, D Fanning, NC Miller, ... IEEE Microwave and Wireless Technology Letters 33 (2), 161-164, 2022 | 21 | 2022 |
| Technology development & design for 22 nm InGaAs/InP-channel MOSFETs MJW Rodwell, M Wistey, U Singisetti, G Burek, A Gossard, S Stemmer, ... 2008 20th International Conference on Indium Phosphide and Related Materials …, 2008 | 15 | 2008 |
| REO/ALO/A1N template for III-N material growth on silicon E Arkun, M Lebby, A Clark, R Dargis US Patent 8,823,055, 2014 | 14 | 2014 |
| Stress mitigating amorphous SiO2 interlayer R Dargis, A Clark, E Arkun US Patent 8,796,121, 2014 | 14 | 2014 |
| High-speed graded-channel GaN HEMTs with linearity and efficiency JS Moon, B Grabar, M Antcliffe, J Wong, C Dao, P Chen, E Arkun, I Khalaf, ... 2020 IEEE/MTT-S International Microwave Symposium (IMS), 573-575, 2020 | 13 | 2020 |
| Deposition of GaN films on crystalline rare earth oxides by MOCVD J Leathersich, E Arkun, A Clark, P Suvarna, J Marini, R Dargis, ... Journal of crystal growth 399, 49-53, 2014 | 13 | 2014 |
| GaN on Si (100) substrate using epi-twist R Dargis, A Clark, E Arkun, R Roucka US Patent 8,846,504, 2014 | 11 | 2014 |
| Heterostructure with carrier concentration enhanced by single crystal REO induced strains R Dargis, A Clark, E Arkun US Patent 9,431,526, 2016 | 10 | 2016 |
| Rare earth oxy-nitride buffered III-N on silicon A Clark, E Arkun, R Smith, M Lebby US Patent 9,105,471, 2015 | 10 | 2015 |
| IEEE MTT-S International Microwave Symposium JS Moon, B Grabar, M Antcliffe, J Wong, C Dao, P Chen, E Arkun, I Khalaf, ... IEEE, 2015 | 10 | 2015 |
| Improving manufacturability of highly scaled RF GaN HEMTs G Siddiqi, A Corrion, D Fanning, M Johnson, D Denninghoff, J Nedy, ... 2022 International Conference on Compound Semiconductor Manufacturing …, 2022 | 9 | 2022 |
| High-speed linear GaN technology with a record efficiency in Ka-band J Moon, J Wong, B Grabar, M Antcliffe, P Chen, E Arkun, I Khalaf, ... 2019 14th European Microwave Integrated Circuits Conference (EuMIC), 57-59, 2019 | 9 | 2019 |
