Aleksey Andreev
Aleksey Andreev
Scientist and Company Director, A-Modelling Solutions Ltd.
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Theory of the electronic structure of GaN/AlN hexagonal quantum dots
AD Andreev, EP O’reilly
Physical Review B 62 (23), 15851, 2000
Strain distributions in quantum dots of arbitrary shape
AD Andreev, JR Downes, DA Faux, EP O’reilly
Journal of Applied Physics 86 (1), 297-305, 1999
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
Selected Topics in Quantum Electronics, IEEE Journal of 8 (4), 801-810, 2002
Mechanism of suppression of Auger recombination processes in type‐II heterostructures
GG Zegrya, AD Andreev
Applied Physics Letters 67 (18), 2681-2683, 1995
Calculation of electric field and optical transitions in quantum wells
UME Christmas, AD Andreev, DA Faux
Journal of applied physics 98 (7), 073522, 2005
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1228-1238, 2003
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications
M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots
AD Andreev, EP O’Reilly
Applied Physics Letters 79 (4), 521-523, 2001
Anisotropy-induced optical transitions in PbSe and PbS spherical quantum dots
AD Andreev, AA Lipovskii
Physical Review B 59 (23), 15402, 1999
Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons
AI Tartakovskii, MN Makhonin, IR Sellers, J Cahill, AD Andreev, ...
Physical Review B 70 (19), 193303, 2004
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers
IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ...
Applied Physics Letters 87 (21), 211114-211114-3, 2005
Structural analysis of strained quantum dots using nuclear magnetic resonance
EA Chekhovich, KV Kavokin, J Puebla, AB Krysa, M Hopkinson, ...
Nature nanotechnology 7 (10), 646-650, 2012
Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots
DP Williams, AD Andreev, EP O’Reilly, DA Faux
Physical Review B 72 (23), 235318, 2005
InSb1− xNx growth and devices
T Ashley, TM Burke, GJ Pryce, AR Adams, A Andreev, BN Murdin, ...
Solid-State Electronics 47 (3), 387-394, 2003
Strain distribution in quantum-dot superlattices
E Sarigiannidou, E Monroy, B Daudin, JL Rouvière, AD Andreev
Applied Physics Letters 87 (20), 203112, 2005
The role of Auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure
IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel
Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1300-1307, 2003
Optical absorption in PbSe spherical quantum dots embedded in glass matrix
AD Andreev, EV Kolobkova, AA Lipovskii
Journal of Applied Physics 88 (2), 750-757, 2000
Theory of conduction band structure of In N x Sb 1− x and Ga N x Sb 1− x dilute nitride alloys
A Lindsay, EP O’Reilly, AD Andreev, T Ashley
Physical Review B 77 (16), 165205, 2008
Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters
AD Andreev, EP OReilly
Applied Physics Letters 87 (21), 213106-213106-3, 2005
Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers
AD Andreev, DV Donetsky
Applied physics letters 74 (19), 2743-2745, 1999
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