Aleksey Andreev

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Eoin O'ReillyResearch Professor, Tyndall National InstituteVerified email at tyndall.ie
Alfred AdamsProfessor of Physics, University of SurreyVerified email at surrey.ac.uk
Stephen J SweeneyProfessor of Photonics and Nanotechnology, James Watt School of Engineering, University of GlasgowVerified email at glasgow.ac.uk
M S SkolnickProfessor of Physics, University of SheffieldVerified email at sheffield.ac.uk
Dr Igor MarkoResearch Fellow, University of Glasgow, GlasgowVerified email at surrey.ac.uk
Stanko TomicFInstP, Chair in Photonics, University of Salford, STFC Daresbury Laboratories, University of SurreyVerified email at salford.ac.uk
Mark HopkinsonUniversity of SheffieldVerified email at sheffield.ac.uk
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Andrey A. Lipovskii (Липовский АА)Alferov University and Peter the Great St.Petersburg Polytechnic University (SPbPU)Verified email at spbau.ru
Alexander TartakovskiiProfessor of Solid State Physics, University of SheffieldVerified email at sheffield.ac.uk
Johann Peter ReithmaierInstitute of Nanostructure Technologies and Analytics (INA), University of KasselVerified email at ina.uni-kassel.de
Stelios ChoulisProfessor, Cyprus University of Technology, Head of MEP Research UnitVerified email at cut.ac.cy
Dmitry FirsovPeter the Great St. Petersburg Polytechnic University (SPbPU)Verified email at rphf.spbstu.ru
Vadim A. Shalygin (Шалыгин В.А.)Peter the Great St.Petersburg Polytechnic University (SPbPU)Verified email at rphf.spbstu.ru
Anthony M FoxProfessor of Optical Physics, University of SheffieldVerified email at sheffield.ac.uk
Ben MurdinUniversity of SurreyVerified email at surrey.ac.uk

Aleksey Andreev

Scientist and Company Director, A-Modelling Solutions Ltd.

Verified email at amodelling.com

nanostructures semiconductor devices lasers theory


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Theory of the electronic structure of GaN/AlN hexagonal quantum dots AD Andreev, EP O’reilly Physical Review B 62 (23), 15851, 2000	452	2000
Strain distributions in quantum dots of arbitrary shape AD Andreev, JR Downes, DA Faux, EP O’reilly Journal of Applied Physics 86 (1), 297-305, 1999	279	1999
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ... Selected Topics in Quantum Electronics, IEEE Journal of 8 (4), 801-810, 2002	203	2002
Mechanism of suppression of Auger recombination processes in type‐II heterostructures GG Zegrya, AD Andreev Applied Physics Letters 67 (18), 2681-2683, 1995	194	1995
Calculation of electric field and optical transitions in quantum wells UME Christmas, AD Andreev, DA Faux Journal of applied physics 98 (7), 073522, 2005	170	2005
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ... Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1228-1238, 2003	165	2003
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008	139	2008
Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots AD Andreev, EP O’Reilly Applied Physics Letters 79 (4), 521-523, 2001	123	2001
Anisotropy-induced optical transitions in PbSe and PbS spherical quantum dots AD Andreev, AA Lipovskii Physical Review B 59 (23), 15402, 1999	111	1999
Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons AI Tartakovskii, MN Makhonin, IR Sellers, J Cahill, AD Andreev, ... Physical Review B 70 (19), 193303, 2004	106	2004
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ... Applied Physics Letters 87 (21), 211114-211114-3, 2005	104	2005
Structural analysis of strained quantum dots using nuclear magnetic resonance EA Chekhovich, KV Kavokin, J Puebla, AB Krysa, M Hopkinson, ... Nature nanotechnology 7 (10), 646-650, 2012	93	2012
Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots DP Williams, AD Andreev, EP O’Reilly, DA Faux Physical Review B 72 (23), 235318, 2005	86	2005
InSb1− xNx growth and devices T Ashley, TM Burke, GJ Pryce, AR Adams, A Andreev, BN Murdin, ... Solid-State Electronics 47 (3), 387-394, 2003	86	2003
Strain distribution in quantum-dot superlattices E Sarigiannidou, E Monroy, B Daudin, JL Rouvière, AD Andreev Applied Physics Letters 87 (20), 203112, 2005	79	2005
The role of Auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1300-1307, 2003	74	2003
Optical absorption in PbSe spherical quantum dots embedded in glass matrix AD Andreev, EV Kolobkova, AA Lipovskii Journal of Applied Physics 88 (2), 750-757, 2000	53	2000
Theory of conduction band structure of In N x Sb 1− x and Ga N x Sb 1− x dilute nitride alloys A Lindsay, EP O’Reilly, AD Andreev, T Ashley Physical Review B 77 (16), 165205, 2008	47	2008
Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters AD Andreev, EP OReilly Applied Physics Letters 87 (21), 213106-213106-3, 2005	47	2005
Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers AD Andreev, DV Donetsky Applied physics letters 74 (19), 2743-2745, 1999	42	1999

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