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Aleksey Andreev
Aleksey Andreev
Scientist and Company Director, A-Modelling Solutions Ltd.
Verified email at amodelling.com
Title
Cited by
Cited by
Year
Theory of the electronic structure of GaN/AlN hexagonal quantum dots
AD Andreev, EP O’reilly
Physical Review B 62 (23), 15851, 2000
4522000
Strain distributions in quantum dots of arbitrary shape
AD Andreev, JR Downes, DA Faux, EP O’reilly
Journal of Applied Physics 86 (1), 297-305, 1999
2791999
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
Selected Topics in Quantum Electronics, IEEE Journal of 8 (4), 801-810, 2002
2032002
Mechanism of suppression of Auger recombination processes in type‐II heterostructures
GG Zegrya, AD Andreev
Applied Physics Letters 67 (18), 2681-2683, 1995
1941995
Calculation of electric field and optical transitions in quantum wells
UME Christmas, AD Andreev, DA Faux
Journal of applied physics 98 (7), 073522, 2005
1702005
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1228-1238, 2003
1652003
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications
M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1392008
Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots
AD Andreev, EP O’Reilly
Applied Physics Letters 79 (4), 521-523, 2001
1232001
Anisotropy-induced optical transitions in PbSe and PbS spherical quantum dots
AD Andreev, AA Lipovskii
Physical Review B 59 (23), 15402, 1999
1111999
Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons
AI Tartakovskii, MN Makhonin, IR Sellers, J Cahill, AD Andreev, ...
Physical Review B 70 (19), 193303, 2004
1062004
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers
IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ...
Applied Physics Letters 87 (21), 211114-211114-3, 2005
1042005
Structural analysis of strained quantum dots using nuclear magnetic resonance
EA Chekhovich, KV Kavokin, J Puebla, AB Krysa, M Hopkinson, ...
Nature nanotechnology 7 (10), 646-650, 2012
932012
Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots
DP Williams, AD Andreev, EP O’Reilly, DA Faux
Physical Review B 72 (23), 235318, 2005
862005
InSb1− xNx growth and devices
T Ashley, TM Burke, GJ Pryce, AR Adams, A Andreev, BN Murdin, ...
Solid-State Electronics 47 (3), 387-394, 2003
862003
Strain distribution in quantum-dot superlattices
E Sarigiannidou, E Monroy, B Daudin, JL Rouvière, AD Andreev
Applied Physics Letters 87 (20), 203112, 2005
792005
The role of Auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure
IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel
Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1300-1307, 2003
742003
Optical absorption in PbSe spherical quantum dots embedded in glass matrix
AD Andreev, EV Kolobkova, AA Lipovskii
Journal of Applied Physics 88 (2), 750-757, 2000
532000
Theory of conduction band structure of In N x Sb 1− x and Ga N x Sb 1− x dilute nitride alloys
A Lindsay, EP O’Reilly, AD Andreev, T Ashley
Physical Review B 77 (16), 165205, 2008
472008
Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters
AD Andreev, EP OReilly
Applied Physics Letters 87 (21), 213106-213106-3, 2005
472005
Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers
AD Andreev, DV Donetsky
Applied physics letters 74 (19), 2743-2745, 1999
421999
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